D. Cabrera, J. Bégueret, N. Verrascina, O. Tesson, O. Mazouffre, P. Gamand
{"title":"一种低相位噪声的三波段LO发生器,用于Ku和E波段无线电,用于点对点应用的回程","authors":"D. Cabrera, J. Bégueret, N. Verrascina, O. Tesson, O. Mazouffre, P. Gamand","doi":"10.1109/BCTM.2016.7738966","DOIUrl":null,"url":null,"abstract":"This paper demonstrates a fully integrated tri-band LO generation system based a low phase noise 12 GHz sub-harmonic VCO and an injection locked frequency tripler (ILFT) as the signal source. The system generates simultaneously three outputs at f<sub>0</sub>, f<sub>0</sub>/2 and 2×f<sub>0</sub>, with maximum frequency of 36 GHz, 18 GHz and 72 GHz respectively. The system which is implemented in a 0.25-μm SiGe:C BiCMOS technology, has a phase noise of -107.72 dBc/Hz at 1 MHz offset from the 36 GHz signal measured at the f<sub>0</sub>-port. All outputs have a tuning range of 9.5% The in-band output power at the f<sub>0</sub>, f<sub>0</sub>/2 and 2×f<sub>0</sub> outputs is higher than 3 dBm, 0 dBm and -20 dBm respectively. The whole system draws 120 mA for a power supply of 2.5 V.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A low phase noise tri-band LO generation for Ku and E band radios for backhauling Point-to-Point applications\",\"authors\":\"D. Cabrera, J. Bégueret, N. Verrascina, O. Tesson, O. Mazouffre, P. Gamand\",\"doi\":\"10.1109/BCTM.2016.7738966\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper demonstrates a fully integrated tri-band LO generation system based a low phase noise 12 GHz sub-harmonic VCO and an injection locked frequency tripler (ILFT) as the signal source. The system generates simultaneously three outputs at f<sub>0</sub>, f<sub>0</sub>/2 and 2×f<sub>0</sub>, with maximum frequency of 36 GHz, 18 GHz and 72 GHz respectively. The system which is implemented in a 0.25-μm SiGe:C BiCMOS technology, has a phase noise of -107.72 dBc/Hz at 1 MHz offset from the 36 GHz signal measured at the f<sub>0</sub>-port. All outputs have a tuning range of 9.5% The in-band output power at the f<sub>0</sub>, f<sub>0</sub>/2 and 2×f<sub>0</sub> outputs is higher than 3 dBm, 0 dBm and -20 dBm respectively. The whole system draws 120 mA for a power supply of 2.5 V.\",\"PeriodicalId\":431327,\"journal\":{\"name\":\"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCTM.2016.7738966\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2016.7738966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low phase noise tri-band LO generation for Ku and E band radios for backhauling Point-to-Point applications
This paper demonstrates a fully integrated tri-band LO generation system based a low phase noise 12 GHz sub-harmonic VCO and an injection locked frequency tripler (ILFT) as the signal source. The system generates simultaneously three outputs at f0, f0/2 and 2×f0, with maximum frequency of 36 GHz, 18 GHz and 72 GHz respectively. The system which is implemented in a 0.25-μm SiGe:C BiCMOS technology, has a phase noise of -107.72 dBc/Hz at 1 MHz offset from the 36 GHz signal measured at the f0-port. All outputs have a tuning range of 9.5% The in-band output power at the f0, f0/2 and 2×f0 outputs is higher than 3 dBm, 0 dBm and -20 dBm respectively. The whole system draws 120 mA for a power supply of 2.5 V.