A passive total power radiometer in 0.25 µm SiGe BiCMOS for millimeter-wave imaging

E. S. Malotaux, M. Spirito
{"title":"A passive total power radiometer in 0.25 µm SiGe BiCMOS for millimeter-wave imaging","authors":"E. S. Malotaux, M. Spirito","doi":"10.1109/BCTM.2016.7738949","DOIUrl":null,"url":null,"abstract":"In this paper we present a high sensitivity total power radiometer front-end integrated in a 0.25 μm SiGe BiCMOS technology. The radiometer consists of a two-stage LNA co-integrated with a common-emitter square-law detector. Together these stages provide a peak responsivity of 61 MV/W and a 6 GHz system bandwidth around 56 GHz. An optimized non-50-Ohm impedance interface between the LNA and the detector results in an improved system responsivity and sensitivity. Furthermore, the use of a large area load resistor in the detector results in a sub-300 Hz noise corner. Combining the peak responsivity with the 194 nV/√Hz noise floor at the output results in a minimum NEP of 3.2 fW/√Hz at 300 Hz.","PeriodicalId":431327,"journal":{"name":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","volume":"66 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCTM.2016.7738949","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

In this paper we present a high sensitivity total power radiometer front-end integrated in a 0.25 μm SiGe BiCMOS technology. The radiometer consists of a two-stage LNA co-integrated with a common-emitter square-law detector. Together these stages provide a peak responsivity of 61 MV/W and a 6 GHz system bandwidth around 56 GHz. An optimized non-50-Ohm impedance interface between the LNA and the detector results in an improved system responsivity and sensitivity. Furthermore, the use of a large area load resistor in the detector results in a sub-300 Hz noise corner. Combining the peak responsivity with the 194 nV/√Hz noise floor at the output results in a minimum NEP of 3.2 fW/√Hz at 300 Hz.
用于毫米波成像的0.25µm SiGe BiCMOS无源总功率辐射计
本文提出了一种采用0.25 μm SiGe BiCMOS技术集成的高灵敏度总功率辐射计前端。该辐射计由一个两级LNA和一个共发射极平方律探测器组成。这些级一起提供61 MV/W的峰值响应和大约56 GHz的6 GHz系统带宽。LNA和检测器之间优化的非50欧姆阻抗接口提高了系统的响应性和灵敏度。此外,在检测器中使用大面积负载电阻会导致低于300 Hz的噪声角。将峰值响应度与输出端的194 nV/√Hz噪声底相结合,在300 Hz时的最小NEP为3.2 fW/√Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信