发布求助
文献互助 智能选刊 最新文献

14th International Reliability Physics Symposium最新文献

筛选
英文 中文
Investigation into Failures of Al Wires Bonded to Au Metallization in Microsubstrates 微基板中铝丝与金镀层结合失效的研究
14th International Reliability Physics Symposium Pub Date : 1976-04-20 DOI: 10.1109/IRPS.1976.362724
R. Kossowsky, A. I. Robinson
{"title":"Investigation into Failures of Al Wires Bonded to Au Metallization in Microsubstrates","authors":"R. Kossowsky, A. I. Robinson","doi":"10.1109/IRPS.1976.362724","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362724","url":null,"abstract":"The morphology and microstructural characteristics of Al-wire bond to Au metallization in microsubstrates was investigated by SEM, electron probe and Auger spectroscopy. It is shown that the ultrasonic bonding creates an interaction zone about 5 ¿m deep. Low bond strength and failure of the bond after H2 soldering cycle is attributed to impurities in the Au inks. These impurities form brittle intermetallics with Al and brittle, readily reducible, low melting glasses.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131802722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Spatial Resolution Auger Electron Spectroscopy (AES) in a Diffusion-Pumped SEM 扩散泵浦扫描电镜中的高空间分辨率俄歇电子能谱(AES)
14th International Reliability Physics Symposium Pub Date : 1976-04-20 DOI: 10.1109/IRPS.1976.362757
E. Brandis
{"title":"High Spatial Resolution Auger Electron Spectroscopy (AES) in a Diffusion-Pumped SEM","authors":"E. Brandis","doi":"10.1109/IRPS.1976.362757","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362757","url":null,"abstract":"High spatial resolution Auger electron spectroscopy in an SEX is presented, and aspects of vacuum requirements for AES in a diffusion-pumped SEM are discussed. The vacuum system of a Cambridge Stereoscan* was rebuilt. Auger spectra recorded after 45 minutes of electron bombardment demonstrated that the carbon buildup-due to the polymerization of hydrocarbon molecules can be prevented by using the gas-jet technique. Auger data taken in an unmodified Cambridge Stereoscan, using only the gas-jet technique, is also presented. The spatial resolution of the SEM operating in the Auger mode is a function of necessary beam current, lens aberrations, and gun brightness. In the existing SEX equipped with a LaB6 electron gun, beam diameters of 0.4 ¿m containing 4 x 10¿7 A at 20 kV were obtained. This allowed the recording of greyscale Auger images with less than 0.5 ¿m spatial resolution in 400 sec.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"62 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122509811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nondestructive, X-Ray Inspection of Ceramic-Chip Capacitors for Delaminations 陶瓷片电容器分层的无损x射线检测
14th International Reliability Physics Symposium Pub Date : 1976-04-20 DOI: 10.1109/IRPS.1976.362736
R. Spriggs, A. Cronshagen
{"title":"Nondestructive, X-Ray Inspection of Ceramic-Chip Capacitors for Delaminations","authors":"R. Spriggs, A. Cronshagen","doi":"10.1109/IRPS.1976.362736","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362736","url":null,"abstract":"A radiographic method has been devised and successfully applied to the detection of delaminations in small ceramic-chip capacitors. The results indicate that this nondestructive technique is suitable for sampling or 100% screening of lots. The radiograph provides an integrated image of internal structure rather than a view of just one plane as in cross sectioning. It requires proper alignment of chips in the x-ray beam, and readily detects voids of at least 0.001-inch width that extend more than 30% of the depth of the capacitor. Life tests of radiographically graded parts showed a high correlation with physical-sectioning results and with capacitor failure rates.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124070012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Sand76-5286 Gold Alumium Interconnect Stability on Thin Film Hybrid Microcircuit Substrates 薄膜混合微电路基板上金铝互连的稳定性
14th International Reliability Physics Symposium Pub Date : 1976-04-20 DOI: 10.1109/IRPS.1976.362722
D. Bushmire
{"title":"Sand76-5286 Gold Alumium Interconnect Stability on Thin Film Hybrid Microcircuit Substrates","authors":"D. Bushmire","doi":"10.1109/IRPS.1976.362722","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362722","url":null,"abstract":"The effects of gold aluminum intermetallic growth on the stability of interconnects to thin film hybrid microcircuits were studied. Three different metallization systems were evaluated using three types of bonding wire. Tantalum-nitride-chromium-gold was bonded using 0.031 mm alurminum 1% Si wire and 0.031 mm aluminum 1% Mg wire. These two wire types were also bonded to substrates metallized with tantalum-nitride titanium-palladium-gold. Also, gold wire (0.025 mm) was bonded to aluminum metallization. These metallization-bond systems were evaluated by subjecting the tests specimens to various known temperatures and time environments followed by loop pull tests to destruction, bond shear tests to destruction, and four-point probe electrical resistance measurements. The environments included: 1. 1000 hrs. of storage at 100°C, 200°C, and 300°C. 2. Temperature cycling from ¿40°C to 200°C for 10, 50, 100, 500, 1000 cycles. The data shows that the electrical resistance shows drastic increases long before mechanical integrity is degraded. It was not uncommon to see kilohms. The results of aging of gold wire bonding to aluminum metallized substrates is described. Stabilized and unstabilized wire were used, and the effects of time and temperature on bond integrity are reported. Both were types degraded mechanically and electrically with little differences between the two.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125636137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Auger Electron Spectroscopy 俄歇电子能谱
14th International Reliability Physics Symposium Pub Date : 1976-04-20 DOI: 10.1109/IRPS.1976.362712
J. Morábito, Frank Grunthaner
{"title":"Auger Electron Spectroscopy","authors":"J. Morábito, Frank Grunthaner","doi":"10.1109/IRPS.1976.362712","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362712","url":null,"abstract":"","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"174 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132696525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A CMOS/SOS Reliability Study CMOS/SOS可靠性研究
14th International Reliability Physics Symposium Pub Date : 1976-04-01 DOI: 10.1109/IRPS.1976.362717
Jack S. Smith, Donald D. Talada
{"title":"A CMOS/SOS Reliability Study","authors":"Jack S. Smith, Donald D. Talada","doi":"10.1109/IRPS.1976.362717","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362717","url":null,"abstract":"With over 100,000 hours of reliability testing of complementary metal oxide semiconductor devices built on sapphire substrates, a pattern of failure mechanisms has emerged. Not surprisingly, the well known gate oxide charge instabilities and gate oxide shorts commonly found in CMOS are also present in this latest technology innovation. The sapphire technology has added to these failure mechanisms several problems related to the input protective network and the so called back-channel leakage current stemming from the silicon-sapphire interface.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116343687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Reliability Implications of Hot Electron Generation and Parasitic Bipolar Action in an IGFET Device IGFET器件中热电子产生和寄生双极作用对可靠性的影响
14th International Reliability Physics Symposium Pub Date : 1976-04-01 DOI: 10.1109/IRPS.1976.362716
S. Abbas, E. Davidson
{"title":"Reliability Implications of Hot Electron Generation and Parasitic Bipolar Action in an IGFET Device","authors":"S. Abbas, E. Davidson","doi":"10.1109/IRPS.1976.362716","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362716","url":null,"abstract":"Potential reliability effects due to a profusion of hot electrons generated by a parasitic bipolar have been identified in short channel N-type IGFET devices. An explanation of the phenomenon as well as a mathematical and circuit model for the effects are presented. Results from the model will be used to predict changes in device characteristics with time.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122273111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Nondestructive SEM Studies of Localized Defects in Gate Dielectric Films of MIS Devices MIS器件栅介电膜局部缺陷的无损扫描电镜研究
14th International Reliability Physics Symposium Pub Date : 1976-04-01 DOI: 10.1109/IRPS.1976.362753
O. K. Griffith, M. Beguwala, R. E. Johnson
{"title":"Nondestructive SEM Studies of Localized Defects in Gate Dielectric Films of MIS Devices","authors":"O. K. Griffith, M. Beguwala, R. E. Johnson","doi":"10.1109/IRPS.1976.362753","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362753","url":null,"abstract":"A nondestructive technique to identify localized defects in the gate dielectric of MOS devices has been developed. The technique is based upon electron beam induced conductivity modulation which gives rise to a relatively large increase in gate current under an applied bias when the beam scans a localized defect area. Measurements on devices with low gate breakdown voltage have been made and correlated with regions where subsequent catastrophic gate breakdown occurred. A circuit description and physical model of the technique is presented.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134098011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
FAMOS PROM Reliability Studies FAMOS PROM可靠性研究
14th International Reliability Physics Symposium Pub Date : 1976-04-01 DOI: 10.1109/IRPS.1976.362742
G. Gear
{"title":"FAMOS PROM Reliability Studies","authors":"G. Gear","doi":"10.1109/IRPS.1976.362742","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362742","url":null,"abstract":"Since the introduction of the FAMOS PROM structure and its implementation in a 2048 bit P-Channel MOS PROM, few device reliability data have been available. This paper presents data taken on both the P-Channel 2048 bit FAMOS PROM and the 8192 bit N-Channel FAMOS PROM. The reliability studies undertaken fall into two categories, PROM retention tests and integrated circuit reliability tests. The combination of tests employed provide the basis for activation energy and failure rate calculations.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130842582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Design and Use of a Laser Interferometer for Ultrasonic Bonding Studies 超声键合研究用激光干涉仪的设计与使用
14th International Reliability Physics Symposium Pub Date : 1976-04-01 DOI: 10.1109/IRPS.1976.362725
B. Martin
{"title":"Design and Use of a Laser Interferometer for Ultrasonic Bonding Studies","authors":"B. Martin","doi":"10.1109/IRPS.1976.362725","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362725","url":null,"abstract":"An in-line laser interferometer was developed to study motions during ultrasonic bonding. The interferometer consists of a 2 milliwatt He-Ne laser with output mirrors at both ends, a lens with adjustment apparatus, and a photodiode detector. The detector output is displayed on an oscilloscope. The lens permits the beam to be focussed to a spot diameter less than 25 micrometers. The beam is focussed on a periodically moving target which results in a fringe pattern displayed on the oscilloscope. Peak-to-peak displacements up to 50 micrometers have been measured with an accuracy of ± 25 nanometers. The fringe pattern observed may be described in terms of a Michelson interferometer. The experimentally observed fringe pattern corresponds exactly to the theoretical plot using the Michelson interferometer. Peak-to-peak displacements are determined by counting the number of fringes on the oscilloscope.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117353343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信