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14th International Reliability Physics Symposium最新文献

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The Use of High Energy Ion Beams for Surface and Thin Film Analysis 高能离子束在表面和薄膜分析中的应用
14th International Reliability Physics Symposium Pub Date : 1976-04-01 DOI: 10.1109/IRPS.1976.362758
J. Poate
{"title":"The Use of High Energy Ion Beams for Surface and Thin Film Analysis","authors":"J. Poate","doi":"10.1109/IRPS.1976.362758","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362758","url":null,"abstract":"The object of this brief review is to introduce the subject of surface and thin film analysis by the use of high energy ion beams. This field has grown considerably in recent years and there is a large literature concerning both techniques and applications. References will be given which illustrate both principles and applications. The principal technique is that of Rutherford backscattering, and we will only cursorily touch upon the other techniques such as ion induced nuclear reactions or ion induced X-rays.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131592882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermally Stimulated Discharge Effects in Polymer Encapsulants 聚合物封装材料的热激放电效应
14th International Reliability Physics Symposium Pub Date : 1976-04-01 DOI: 10.1109/IRPS.1976.362748
J. B. Woodard
{"title":"Thermally Stimulated Discharge Effects in Polymer Encapsulants","authors":"J. B. Woodard","doi":"10.1109/IRPS.1976.362748","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362748","url":null,"abstract":"Regions of polymer encapsulant formulations are frequently exposed to high temperatures and high electric field strengths when used in encapsulation of semiconductor devices. The technique of thermally stimulated discharge is used to study effects of these polarizing fields on various epoxy compounds. The dependence of the unique discharge curve shapes found for these systems on chemical composition is noted. New methods of analysis are presented. Desirable polarization properties for an epoxy encapsulant are defined, and an approach to the development of systems exhibiting these desirable properties is outlined.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"480 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133632646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Detection of Barrel Cracks in Plated Through Holes using Four Point Resistance Measurements 四点电阻法检测镀通孔管状裂纹
14th International Reliability Physics Symposium Pub Date : 1976-04-01 DOI: 10.1109/IRPS.1976.362733
D. Rudy
{"title":"The Detection of Barrel Cracks in Plated Through Holes using Four Point Resistance Measurements","authors":"D. Rudy","doi":"10.1109/IRPS.1976.362733","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362733","url":null,"abstract":"The influence of voltage and current probe connections on the detection of barrel cracks and similar flaws in plated through holes is discussed. Theoretical calculation of the sensitivity of a four point resistance measurement to the length of a barrel crack is compared to experimental results for a variety of current voltage probe configurations.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"267 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133760316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Hot Electron Induced Degradation of N-Channel IGFETs n沟道igfet的热电子诱导降解
14th International Reliability Physics Symposium Pub Date : 1976-04-01 DOI: 10.1109/IRPS.1976.362719
S. Abbas, R. Dockerty
{"title":"Hot Electron Induced Degradation of N-Channel IGFETs","authors":"S. Abbas, R. Dockerty","doi":"10.1109/IRPS.1976.362719","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362719","url":null,"abstract":"Under certain bias conditions, electrons flowing through the channel of an n-channel IGFET can be injected into the gate insulator. A fraction of the injected electrons is trapped in the dielectric, producing a shift in device operating characteristics. This phenomenon is minimized by proper device design. A model is described to predict long-term shifts from accelerated stress test data.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130751528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Methods for Evaluating Plated-Through-Hole Reliability 钢板通孔可靠性评价方法
14th International Reliability Physics Symposium Pub Date : 1976-04-01 DOI: 10.1109/IRPS.1976.362731
M. A. Oien
{"title":"Methods for Evaluating Plated-Through-Hole Reliability","authors":"M. A. Oien","doi":"10.1109/IRPS.1976.362731","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362731","url":null,"abstract":"The principal thermo-mechanical failure modes of a plated-through-hole structure are described and the major factors contributing to such failures are discussed in mechanistic terms. This leads to the development of an improved methodology for evaluating the reliability of plated-through-holes.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"438 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114582242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
The Reliability of Integrated Injection Logic Circuits for the Bell System 贝尔系统集成注入逻辑电路的可靠性
14th International Reliability Physics Symposium Pub Date : 1976-04-01 DOI: 10.1109/IRPS.1976.362714
F. Hewlett, R. Pedersen
{"title":"The Reliability of Integrated Injection Logic Circuits for the Bell System","authors":"F. Hewlett, R. Pedersen","doi":"10.1109/IRPS.1976.362714","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362714","url":null,"abstract":"The reliability of Integrated Injection Logic (I2L) or Merged Transistor Logic (MTL) circuits fabricated in a standard bipolar technology with Ti-Pt-Au interconnection is reported. The study is based on accelerated stress aging and actual field results. Experiments are described which demonstrate that I2L circuit failure in humid ambients due to Au elelctrolysis will not occur because of low voltage operation. Failure rates less than 10 FITs for an LSI part (.001% failure per 1000 device hours) under normal stress over a 40 year life are predicted for the main population by accelerated bias temperature and bias humidity stress. Well behaved current gain (ßu) under bias temperature step stress indicates that Ou degradation will not be a significant failure mechanism. At this writing, more than 60 million device hours have been accumulated for LSI chips in specific applications with no reported chip failures. This field result firmly supports accelerated stress reliability predictions.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114509552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Fusing Mechanism of Nichrome-Linked Programmable Read-Only Memory Devices 镍铬连接可编程只读存储器器件的融合机制
14th International Reliability Physics Symposium Pub Date : 1976-04-01 DOI: 10.1109/IRPS.1976.362737
G. B. Kenney, W. Jones, R. E. Ogilvie
{"title":"Fusing Mechanism of Nichrome-Linked Programmable Read-Only Memory Devices","authors":"G. B. Kenney, W. Jones, R. E. Ogilvie","doi":"10.1109/IRPS.1976.362737","DOIUrl":"https://doi.org/10.1109/IRPS.1976.362737","url":null,"abstract":"The Programmable Read-Only Memory (PROM) consists of a two-dimensional matrix of nichrome (NiCr) fuses blown in a specific pattern to introduce a digital code. In this application, the reliability of the NiCr fuse can be considered to consist of two parts, that of the unfused and the fused resistor link. The reliability of unblown NiCr registors has been reported as excellent, when the resistors are properly fabricated and operated within well-defined specifications .[1,2,3] t The reliability of blown resistors is directly related to the probability of healing or \"growback\" occurring. [4] However, this can be minimized by fusing the resistors under proper blowing conditions. Although the reliability of fused NiCr resistors has been established, fusing mechanism has not, and is at presentonly speculation.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1976-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127121838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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