{"title":"n沟道igfet的热电子诱导降解","authors":"S. Abbas, R. Dockerty","doi":"10.1109/IRPS.1976.362719","DOIUrl":null,"url":null,"abstract":"Under certain bias conditions, electrons flowing through the channel of an n-channel IGFET can be injected into the gate insulator. A fraction of the injected electrons is trapped in the dielectric, producing a shift in device operating characteristics. This phenomenon is minimized by proper device design. A model is described to predict long-term shifts from accelerated stress test data.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Hot Electron Induced Degradation of N-Channel IGFETs\",\"authors\":\"S. Abbas, R. Dockerty\",\"doi\":\"10.1109/IRPS.1976.362719\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Under certain bias conditions, electrons flowing through the channel of an n-channel IGFET can be injected into the gate insulator. A fraction of the injected electrons is trapped in the dielectric, producing a shift in device operating characteristics. This phenomenon is minimized by proper device design. A model is described to predict long-term shifts from accelerated stress test data.\",\"PeriodicalId\":428300,\"journal\":{\"name\":\"14th International Reliability Physics Symposium\",\"volume\":\"92 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1976-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"14th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1976.362719\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"14th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1976.362719","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hot Electron Induced Degradation of N-Channel IGFETs
Under certain bias conditions, electrons flowing through the channel of an n-channel IGFET can be injected into the gate insulator. A fraction of the injected electrons is trapped in the dielectric, producing a shift in device operating characteristics. This phenomenon is minimized by proper device design. A model is described to predict long-term shifts from accelerated stress test data.
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