Fusing Mechanism of Nichrome-Linked Programmable Read-Only Memory Devices

G. B. Kenney, W. Jones, R. E. Ogilvie
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引用次数: 7

Abstract

The Programmable Read-Only Memory (PROM) consists of a two-dimensional matrix of nichrome (NiCr) fuses blown in a specific pattern to introduce a digital code. In this application, the reliability of the NiCr fuse can be considered to consist of two parts, that of the unfused and the fused resistor link. The reliability of unblown NiCr registors has been reported as excellent, when the resistors are properly fabricated and operated within well-defined specifications .[1,2,3] t The reliability of blown resistors is directly related to the probability of healing or "growback" occurring. [4] However, this can be minimized by fusing the resistors under proper blowing conditions. Although the reliability of fused NiCr resistors has been established, fusing mechanism has not, and is at presentonly speculation.
镍铬连接可编程只读存储器器件的融合机制
可编程只读存储器(PROM)由镍铬合金(NiCr)熔断器的二维矩阵组成,熔断器以特定的模式熔断,以引入数字代码。在这种应用中,NiCr熔断器的可靠性可以考虑由两部分组成,即未熔断部分和熔断电阻部分。据报道,当电阻器正确制造并在定义良好的规范内操作时,未吹灭的NiCr寄存器的可靠性是非常好的。[1,2,3]吹灭的电阻器的可靠性与愈合或“生长”发生的概率直接相关。[4]然而,这可以通过在适当的吹风条件下熔合电阻来最小化。熔接NiCr电阻器的可靠性虽然已经确定,但熔接机理尚未确定,目前还只是推测。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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