IGFET器件中热电子产生和寄生双极作用对可靠性的影响

14th International Reliability Physics Symposium Pub Date : 1976-04-01 DOI:10.1109/IRPS.1976.362716

S. Abbas, E. Davidson

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引用次数: 7

摘要

在短沟道n型IGFET器件中，由于寄生双极产生的大量热电子，已经确定了潜在的可靠性影响。本文给出了对这一现象的解释，并给出了该效应的数学模型和电路模型。该模型的结果将用于预测器件特性随时间的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reliability Implications of Hot Electron Generation and Parasitic Bipolar Action in an IGFET Device

Potential reliability effects due to a profusion of hot electrons generated by a parasitic bipolar have been identified in short channel N-type IGFET devices. An explanation of the phenomenon as well as a mathematical and circuit model for the effects are presented. Results from the model will be used to predict changes in device characteristics with time.

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14th International Reliability Physics Symposium

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