{"title":"Reliability Implications of Hot Electron Generation and Parasitic Bipolar Action in an IGFET Device","authors":"S. Abbas, E. Davidson","doi":"10.1109/IRPS.1976.362716","DOIUrl":null,"url":null,"abstract":"Potential reliability effects due to a profusion of hot electrons generated by a parasitic bipolar have been identified in short channel N-type IGFET devices. An explanation of the phenomenon as well as a mathematical and circuit model for the effects are presented. Results from the model will be used to predict changes in device characteristics with time.","PeriodicalId":428300,"journal":{"name":"14th International Reliability Physics Symposium","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"14th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1976.362716","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Potential reliability effects due to a profusion of hot electrons generated by a parasitic bipolar have been identified in short channel N-type IGFET devices. An explanation of the phenomenon as well as a mathematical and circuit model for the effects are presented. Results from the model will be used to predict changes in device characteristics with time.