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W-deposited contacts with carbon nanofiber using focused ion and electron beams 利用聚焦离子束和电子束与碳纳米纤维接触
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652503
S. Maeda, Toshishige Yamada, Patrick Whilhite, H. Yabutani, Tsutomu Saito, Cary Y. Yang
{"title":"W-deposited contacts with carbon nanofiber using focused ion and electron beams","authors":"S. Maeda, Toshishige Yamada, Patrick Whilhite, H. Yabutani, Tsutomu Saito, Cary Y. Yang","doi":"10.1109/NMDC.2010.5652503","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652503","url":null,"abstract":"Carbon nanofiber (CNF) is promising as a next-generation on-chip interconnect material. Understanding the temperature dependence of CNF resistance is important in evaluating its potential for such interconnect applications. In a CNF test device, contacts formed by tungsten (W) deposition using focused ion beam (FIB) is effective in minimizing the effect of unwanted parasitics, thus yielding a more accurate determination of the temperature dependence. However, FIB deposition can potentially damage devices because of its high energy. We propose to use a gas-injection system for low-energy electron-beam deposition with fine precision in a variable-pressure scanning electron microscope. The results of W-deposited CNF devices obtained using electron beam (e-beam) are compared with their FIB counterparts.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131696888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improving faint-signal sensitivity of electrolyte-gated carbon nanotube field-effect transistors using external noise 利用外部噪声提高电解门控碳纳米管场效应晶体管的微弱信号灵敏度
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652537
Yasufumi Hakamata, Y. Ohno, K. Maehashi, Koichi Inoue, K. Matsumoto
{"title":"Improving faint-signal sensitivity of electrolyte-gated carbon nanotube field-effect transistors using external noise","authors":"Yasufumi Hakamata, Y. Ohno, K. Maehashi, Koichi Inoue, K. Matsumoto","doi":"10.1109/NMDC.2010.5652537","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652537","url":null,"abstract":"Stochastic resonance (SR) in carbon nanotube field-effect transistors (CNT-FETs) was investigated to enhance their weak-signal response. When weak pulse trains were applied to the gate of a CNT-FET operating in a subthreshold regime, the correlation coefficient between the input and output voltages increased upon addition of noise with optimized intensity. SR was observed both in air and in solutions. These results indicate that external noise is able to improve faint-signal sensitivity of CNT-FETs. Therefore, CNT-FETs based on stochastic resonance are promising candidates for highly sensitive label-free sensors.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"164 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113982792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Synthesis and characterization of transferable graphene by CVD method CVD法合成可转移石墨烯及其表征
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652416
M. Gautam, A. Jayatissa, G. Sumanasekera
{"title":"Synthesis and characterization of transferable graphene by CVD method","authors":"M. Gautam, A. Jayatissa, G. Sumanasekera","doi":"10.1109/NMDC.2010.5652416","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652416","url":null,"abstract":"Synthesis of large-area graphene has been realized on the top of copper substrates by chemical vapor deposition (CVD) at ambient pressure with the flow of a mixture of hydrogen and methane gases. The graphene layers were transferred to the oxidized silicon wafers employing a undercutting method. The intense G (1570 cm−1) and 2D (2700 cm−1) bands observed from Raman spectroscopy reveals the presence of graphene on top of oxidized silicon wafer. Reflectance spectroscopy was measured and compared with the theoretical calculation based on Fresnel's approach estimating the thickness of the graphene layer to be 0.32 Å. The optical spectra of graphene layers could be reproduced using the complex refractive index of graphene indicating that the optical properties of graphene is not significantly different from that of in-plane graphite. As part of the device fabrication, graphene layers were tested for oxygen sensitivity in hydrogen as a function of gas composition at different temperatures.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123833831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Nanostructured VO2 film coatings for tunable MEMS resonators 用于可调谐MEMS谐振器的纳米结构VO2薄膜涂层
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652371
E. Merced, R. Cabrera, R. Suarez, F. Fernández, N. Sepúlveda
{"title":"Nanostructured VO2 film coatings for tunable MEMS resonators","authors":"E. Merced, R. Cabrera, R. Suarez, F. Fernández, N. Sepúlveda","doi":"10.1109/NMDC.2010.5652371","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652371","url":null,"abstract":"This paper reports measurements of the electrical resistance and resonant frequency of VO2-coated silicon dioxide (SiO2) bridges when the coating's insulator-to-metal transition (IMT) is thermally induced by conduction. The measurements of these two properties were done simultaneously. The decrease in electrical resistance was close to three orders in magnitude. The resonant frequency shift across the IMT started with an increase of 1.5% for temperatures in the “cold end” of the IMT, followed by a decrease of 20% for temperatures in the “hot end” of the IMT.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122003580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On-chip electrochemistry: A nanofabricated platform for single nanowire battery electrochemistry 片上电化学:单纳米线电池电化学的纳米制造平台
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5651972
A. Subramanian, J. Sullivan, J. Huang, N. Hudak, Y. Zhan, J. Lou, C. Wang
{"title":"On-chip electrochemistry: A nanofabricated platform for single nanowire battery electrochemistry","authors":"A. Subramanian, J. Sullivan, J. Huang, N. Hudak, Y. Zhan, J. Lou, C. Wang","doi":"10.1109/NMDC.2010.5651972","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5651972","url":null,"abstract":"This effort focuses on nanofabricated devices that can be employed to probe the electrochemical behavior of individual nanowires (NWs) as lithiumion battery electrodes. The hybrid fabrication approach involves synergistic integration of bottom-up (dielectrophoresis) and top-down (silicon nanomachining) manufacturing processes. The structure lends itself to characterizing the electrical and structural transformations induced within individual nanowires during battery processes. Furthermore, the platforms are engineered to be compatible with transmission electron microscopy (TEM). Advanced in-situ spectroscopic tools such as electron energy loss spectroscopy (EELS) provide further insights into the atomic-to-nanoscale structural changes in low-dimensional nanostructures associated with lithium insertion.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126691526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Capturing the effect of the nanoshell aspect ratio on the resonance wavelength and quality factor in sensing applications using an impedance-based model 利用基于阻抗的模型捕捉纳米壳宽高比对传感应用中共振波长和质量因子的影响
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652422
S. Smaili, Y. Massoud
{"title":"Capturing the effect of the nanoshell aspect ratio on the resonance wavelength and quality factor in sensing applications using an impedance-based model","authors":"S. Smaili, Y. Massoud","doi":"10.1109/NMDC.2010.5652422","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652422","url":null,"abstract":"Nanoshells promise to be valuable in a wide range of applications ranging from chemical sensing to cancer treatment. Different applications require different performance from the nanoshell and pose different constraints on them, and thus the nanoshell sensor has to be designed according to the given application. In this regard, the resonance wavelength and the Q factor are the most important properties to consider. In this paper we provide analysis for the nanoshell resonance wavelength and Q factor based on an impedance model of the nanoshell.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114595795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Current-voltage model in depletion all around operation of InSb nanowire field effect transistor InSb纳米线场效应晶体管耗尽时的电流-电压模型
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652549
I. Jahangir, S. Jahangir, Q. Khosru
{"title":"Current-voltage model in depletion all around operation of InSb nanowire field effect transistor","authors":"I. Jahangir, S. Jahangir, Q. Khosru","doi":"10.1109/NMDC.2010.5652549","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652549","url":null,"abstract":"In this work, a numerical model of quantum transport in depletion-all-around (DAA) operation of n-InSb nanowire field effect transistor (NWFET) is developed. For incorporating quantum transport, 2D Poisson-Schrödinger equations are solved by finite element method and drain current is calculated by mode-space approach. Effects of gate and drain bias voltages and device dimensions on current-voltage characteristics are observed.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129524981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An analytical impedance-based compact model for capturing the resonance wavelength of a nanoshell resonator under dipole approximation 偶极子近似下纳米壳谐振器共振波长的解析阻抗紧致模型
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652109
Y. Massoud, S. Smaili
{"title":"An analytical impedance-based compact model for capturing the resonance wavelength of a nanoshell resonator under dipole approximation","authors":"Y. Massoud, S. Smaili","doi":"10.1109/NMDC.2010.5652109","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652109","url":null,"abstract":"Nanoshells have been utilized in a wide range of applications, from cancer treatment to sensing of chemicals and biological materials. Such applications are based on Surface Plasmon Polariton (SPP) oscillations that nanoshells support, where resonance peaks in the extinction of electromagnetic waves are observed at certain wavelengths that depend on the size of the nanoshell as well as its composite material. In this paper, we develop an impedance model that captures the resonance wavelength of nanoshells allowing for the design of nanoshells to meet specific requirements, depending on the application in which the nanoshell is used. The nanoshell is modeled as a resonator, and the model can accurately and efficiently predict the resonance wavelength of the nanoshell.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129577574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
On-line sensing and visual feedback for atomic force microscopy (AFM) based nano-manipulations 基于原子力显微镜(AFM)的纳米操作的在线传感和视觉反馈
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5651906
Bo Song, N. Xi, Ruiguo Yang, K. Wai, Chiu Lai, Chengeng Qu
{"title":"On-line sensing and visual feedback for atomic force microscopy (AFM) based nano-manipulations","authors":"Bo Song, N. Xi, Ruiguo Yang, K. Wai, Chiu Lai, Chengeng Qu","doi":"10.1109/NMDC.2010.5651906","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5651906","url":null,"abstract":"Atomic Force Microscopy (AFM) is a powerful and popular technique of single-molecule imaging both in air and liquid. Recent research and hardware development provide AFM with the function of manipulation nano-particle and modify sample surface in nano-scale. However, due to AFM usually takes several minutes to get an image and the surface change is hard to observe in real-time manipulation. In this paper, a novel approach for on-line sensing and display method is proposed and used for updating the surface change during the manipulation of cell. In this approach a cutting force detection model is used for cutting depth judgment. In addition, an adaptive local-scan strategy is involved here to get the topography of the local surface. Finally a display model is used to update the change of the surface during the manipulation. With this novel scheme the process of cell cutting become real-time visualized. So, AFM tip could work as an efficient nanolithography or cutting tool.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124732569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Acid Etch Study of Vertically Aligned Carbon Nanofibers (VACNFs) 垂直排列纳米碳纤维(VACNFs)的酸蚀研究
2010 IEEE Nanotechnology Materials and Devices Conference Pub Date : 2010-12-03 DOI: 10.1109/NMDC.2010.5652462
Zhuxin Dong, U. Wejinya, S. N. S. Chalamalasetty, M. R. Margis, T. G. Duensing
{"title":"Acid Etch Study of Vertically Aligned Carbon Nanofibers (VACNFs)","authors":"Zhuxin Dong, U. Wejinya, S. N. S. Chalamalasetty, M. R. Margis, T. G. Duensing","doi":"10.1109/NMDC.2010.5652462","DOIUrl":"https://doi.org/10.1109/NMDC.2010.5652462","url":null,"abstract":"One of the major limitations in the development of ultrasensitive electrochemical biosensors based on one dimensional nanostructures is the difficulty involved with uniform growth of the nanofibers. Fabrication of the Vertically Aligned Carbon Nano Fibers (VACNFs) involve treatment of several chemicals including a variety of etchants. In previous work, successful measurement and characterization of electron beam patterned VACNFs is demonstrated using Atomic Force Microscopy. Also the effect of most commonly used etchant i.e. HF is studied. Here, the effect of acid etching on VACNFs is observed and characterized using a highly sensitive and precise Atomic Force Microscopy (AFM). Furthermore, statistical analysis is performed on AFM data to demonstrate data confidence and verify experiments.","PeriodicalId":423557,"journal":{"name":"2010 IEEE Nanotechnology Materials and Devices Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125690811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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