Current-voltage model in depletion all around operation of InSb nanowire field effect transistor

Abstract

In this work, a numerical model of quantum transport in depletion-all-around (DAA) operation of n-InSb nanowire field effect transistor (NWFET) is developed. For incorporating quantum transport, 2D Poisson-Schrödinger equations are solved by finite element method and drain current is calculated by mode-space approach. Effects of gate and drain bias voltages and device dimensions on current-voltage characteristics are observed.