W-deposited contacts with carbon nanofiber using focused ion and electron beams

S. Maeda, Toshishige Yamada, Patrick Whilhite, H. Yabutani, Tsutomu Saito, Cary Y. Yang
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Abstract

Carbon nanofiber (CNF) is promising as a next-generation on-chip interconnect material. Understanding the temperature dependence of CNF resistance is important in evaluating its potential for such interconnect applications. In a CNF test device, contacts formed by tungsten (W) deposition using focused ion beam (FIB) is effective in minimizing the effect of unwanted parasitics, thus yielding a more accurate determination of the temperature dependence. However, FIB deposition can potentially damage devices because of its high energy. We propose to use a gas-injection system for low-energy electron-beam deposition with fine precision in a variable-pressure scanning electron microscope. The results of W-deposited CNF devices obtained using electron beam (e-beam) are compared with their FIB counterparts.
利用聚焦离子束和电子束与碳纳米纤维接触
纳米碳纤维(CNF)是一种很有前途的下一代片上互连材料。了解CNF电阻的温度依赖性对于评估其在此类互连应用中的潜力非常重要。在CNF测试装置中,使用聚焦离子束(FIB)沉积钨(W)形成的触点可以有效地减少不必要的寄生效应,从而更准确地确定温度依赖性。然而,FIB沉积由于其高能量,可能会对器件造成潜在的破坏。我们提出了在变压扫描电子显微镜下使用气体喷射系统进行低能电子束沉积的方案。用电子束(e-beam)得到的w -沉积CNF器件的结果与FIB器件的结果进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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