Nanostructured VO2 film coatings for tunable MEMS resonators

E. Merced, R. Cabrera, R. Suarez, F. Fernández, N. Sepúlveda
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引用次数: 2

Abstract

This paper reports measurements of the electrical resistance and resonant frequency of VO2-coated silicon dioxide (SiO2) bridges when the coating's insulator-to-metal transition (IMT) is thermally induced by conduction. The measurements of these two properties were done simultaneously. The decrease in electrical resistance was close to three orders in magnitude. The resonant frequency shift across the IMT started with an increase of 1.5% for temperatures in the “cold end” of the IMT, followed by a decrease of 20% for temperatures in the “hot end” of the IMT.
用于可调谐MEMS谐振器的纳米结构VO2薄膜涂层
本文报道了二氧化硅(SiO2)电桥的电阻和谐振频率的测量,当涂层的绝缘体到金属的转变(IMT)由传导热诱导时。这两种性质的测量是同时进行的。电阻的下降接近三个数量级。IMT的谐振频移始于IMT“冷端”温度升高1.5%,随后IMT“热端”温度下降20%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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