2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)最新文献_第3页

Series Compensation for DC Microgrid Stabilization Utilizing T-Type Modular Dc Circuit Breaker t型模块化直流断路器对直流微电网稳定的串联补偿

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955249

Faisal Alsaif, Yue Zhang, Nihanth Adina, Khalid Alkhalid, Jin Wang

引用次数: 1

A Highly Integrated Sensorless Field Oriented Control BLDC / PMSM Inverter with 99% Efficiency Enabled by an All-in-one System Integrated Full SiC Intelligent Power Module (sIPM®) 采用一体化系统集成全SiC智能功率模块(sIPM®)实现效率99%的高集成度无传感器场定向控制BLDC / PMSM逆变器

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955268

F. Hsu, C. Yen, Hsiang-Ting Hung, Guan-Wei Lin, Chih-Feng Huang, Lung-Sheng Lin, I-Chi Lin, Chih-Fang Huang, Ta-Yung Yang

引用次数: 0

Thermal Design and Experimental Evaluation of a 1kV, 500A T-Type Modular DC Circuit Breaker 1kV 500A t型模块化直流断路器的热设计与实验评价

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955276

B. Riar, J. Ewanchuk, Hailing Wu, Yue Zhang, Xiao Li, Dihao Ma, Rob Borjas, Jin Wang

引用次数: 0

Next Generation of GaN Single-Board High Power Stages 下一代GaN单板高功率级

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955306

R. Samani, Juncheng Lu, Ignacio Galiano Zurbriggen

引用次数: 1

Comparison of Thermally Optimized SMD Packages for 100 V GaN HEMTs in 300 kHz Buck Converter High Current Applications 300khz降压变换器大电流应用中100v GaN hemt热优化SMD封装比较

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955270

Dominik Koch, Ankit Sharma, T. Huesgen, I. Kallfass

{"title":"Comparison of Thermally Optimized SMD Packages for 100 V GaN HEMTs in 300 kHz Buck Converter High Current Applications","authors":"Dominik Koch, Ankit Sharma, T. Huesgen, I. Kallfass","doi":"10.1109/WiPDA56483.2022.9955270","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955270","url":null,"abstract":"In this work an approach for a direct experimental comparison of the application-oriented performance between two high current GaN DC/DC converters based on 7mΩ, 100V GaN HEMTs in a commercial off-the-shelf top-cooled package and 5mΩ, 100V GaN HEMTs embedded in a thermally-optimized single-chip package is given. The two packaging versions are compared by a maximally identical implementation of the power and gate loops in a 48V, 300kHz buck converter with two parallel GaN HEMTs. In the single-chip package the die is directly mounted on a 12×6mm2 copper-heat spreader offering a significantly lower thermal resistance to heatsink (1.69KW−1) in comparison to the commercial off-the-shelf version (2.45KW−1). For a direct benchmark, the COTS-based converter has an identical power-loop to the SCP-version with a novel gate-drive concept. Both versions have an efficiency of 96.8% at 65A output current (output power: 1.5kW), while the commercial off-the-shelf version has a better efficiency for lower currents, due to its better hard-switching Figure-of-Merits and therefore lower switching losses and reaches an output current of up to 80A (output power: 1.75kW). A detailed analytical loss breakdown for the different transistors in dependence of the temperature and output current is given to proof the measured current point, where the efficiencies of both converters are identical, since the higher switching losses of the SCP version are compensated by lower conduction losses at higher currents and temperatures compared to the smaller COTS transistor. Finally, an outlook on further improvements for reaching higher output currents and potential converters for a more fair comparison of different thermally optimized SMD packages are given.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123056607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

GaN Power Converter Applied to Electrocaloric Heat Pump Prototype and Carnot Cycle 氮化镓功率变换器在电热热泵样机及卡诺循环中的应用

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955287

S. Moench, R. Reiner, Kareem Mansour, M. Basler, P. Waltereit, R. Quay, K. Bartholomé

{"title":"GaN Power Converter Applied to Electrocaloric Heat Pump Prototype and Carnot Cycle","authors":"S. Moench, R. Reiner, Kareem Mansour, M. Basler, P. Waltereit, R. Quay, K. Bartholomé","doi":"10.1109/WiPDA56483.2022.9955287","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955287","url":null,"abstract":"A 99% efficient power converter is applied to an electrocaloric heat pump prototype for the first time, enabling cyclic electrical field variation in electrocaloric capacitors and high heat pump performance. The electrocaloric effect is an almost fully reversible temperature change in special dielectrics caused by changed electrical field. The GaN power converter achieves high efficiency by zero-voltage switching hysteretic current control. Blocks of commercial multi-layer ceramic capacitors which exhibit an electrocaloric effect are efficiently charged and discharged, synchronized to contacting to a heat sink and source by actuators, which forms a heat pump prototype. Brayton cycles are caused by trapezoidal voltage. Then, arbitrary voltage (E-field) variation for Carnot-like cycles with quasi-isothermal heat transfer is demonstrated and verified by the measured almost constant heat flux during contact to the heat sink. The performance of electrocaloric heat pump prototypes in literature was limited by losses of LC resonant circuits, and is improved by an up to 15.5-fold decrease by this work. The work demonstrates electrocalorics as an emerging power electronics application and contributes to realize future efficient and emission-free, solid state, and electrocaloric heat pump systems.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127511368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Compact Three-Level GaN Power Module Suitable for Active-Neutral-Point-Clamped (ANPC) Three-Level Converter 紧凑型三电平GaN功率模块，适用于有源中性点箝位(ANPC)三电平变换器

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955289

Ziwei Liang, Liyan Zhu, Hua Bai, Yue Sun

引用次数: 0

Design Optimization and Surge Current Capability of 4H-SiC Lateral Deep P+ JBS Diode on Thin RESURF Layer 4H-SiC横向深P+ JBS二极管的设计优化及浪涌电流性能

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955046

Atsushi Shimbori, A. Q. Huang

引用次数: 0

Noise Analysis of Current Sensor for Medium Voltage Power Converter Enabled by Silicon-Carbide MOSFETs 碳化硅mosfet使能中压功率变换器电流传感器噪声分析

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955291

Morten Rahr Nielsen, Mathias Kirkeby, Hongbo Zhao, D. Dalal, Michael Møller Bech, S. Munk‐Nielsen

{"title":"Noise Analysis of Current Sensor for Medium Voltage Power Converter Enabled by Silicon-Carbide MOSFETs","authors":"Morten Rahr Nielsen, Mathias Kirkeby, Hongbo Zhao, D. Dalal, Michael Møller Bech, S. Munk‐Nielsen","doi":"10.1109/WiPDA56483.2022.9955291","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955291","url":null,"abstract":"New semiconductor devices based on wide bandgap materials are emerging in medium voltage power electronic converter applications, presenting new opportunities to the industry relying on semiconductor devices. SiC MOSFETs with blocking voltages of 10 kV (and above) is a promising technology, however, their fast switching transitions result in increased output voltage slew rate (dv/dt), which poses challenges to the applicability of the SiC MOSFET technology. This paper examines the impact of the increased dv/dt on the applicability of an off-the-shelf closed loop hall-effect current sensor when utilized in a medium voltage SiC MOSFET based power electronics converter. Analysis of the capacitive couplings in the current sensor is presented along with an experimental determination of the parasitic capacitance between its primary conductor and secondary winding. Experimental measurements have identified two distinct noise components in the current sensor measurement path due to: 1) capacitive coupling between the primary conductor and secondary winding, and 2) an inferred capacitive coupling into the active circuitry of the current sensor.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126130084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

3kV 6.7mΩ·cm2 4H-SiC BJT with An Effective Junction Termination Extension (JTE) 3kV 6.7mΩ·cm2具有有效结端扩展(JTE)的4H-SiC BJT

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955277

Xixi Luo, A. Q. Huang

引用次数: 0