2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)最新文献_第5页

Design of High Current, High Power Density GaN Based Motor Drive for All Electric Aircraft Application 全电动飞机用大电流、高功率密度氮化镓电机驱动设计

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955273

W. Khan, Armin Ebrahimian, S. I. Hosseini S., N. Weise

{"title":"Design of High Current, High Power Density GaN Based Motor Drive for All Electric Aircraft Application","authors":"W. Khan, Armin Ebrahimian, S. I. Hosseini S., N. Weise","doi":"10.1109/WiPDA56483.2022.9955273","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955273","url":null,"abstract":"The past decade has seen noticeable advancements in the miniaturization of wide-band gap semiconductor technology making it feasible to be applied in demanding applications such as more-electric-aircrafts (MEA). Multiple high speed electric motors operating in parallel with current ratings in hundreds of amps are required to match the power delivery capability of conventional jet engines. As a result, the power electronics driving the motors require special attention to parallel multiple active switches in order to meet the high current requirements. This paper presents the design of an axially stator mounted 250 kW integrated modular motor drive for MEA applications. The design considerations presented include optimal component placement and layer stackup to minimize voltage overshoots during switch commutation, optimal gate drive layout to synchronize the current sharing of multiple GaN active switches, and the selection process of the on-board current sensor. Lastly, experimental test results are presented that verify the efficacy of the proposed design.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125403292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

In-Situ Ultrafast Sensing Techniques for Prognostics and Protection of SiC Devices 原位超快传感技术用于SiC器件的预测和保护

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955254

Ali Parsa Sirat, Chondon Roy, Daniel Evans, J. Gafford, B. Parkhideh

{"title":"In-Situ Ultrafast Sensing Techniques for Prognostics and Protection of SiC Devices","authors":"Ali Parsa Sirat, Chondon Roy, Daniel Evans, J. Gafford, B. Parkhideh","doi":"10.1109/WiPDA56483.2022.9955254","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955254","url":null,"abstract":"Embedding diagnostic and prognostic into power electronics has the potential to increase the reliability and resiliency of and increasing automated adaptability in variable operating conditions has increased the reliability and resiliency of these systems, especially with the transition to wide bandgap semiconductors where higher voltages, lower on-state resistances, and faster switching speed can lead to rapid failures under conditions such as shoot through. This value proposition requires minimally invasive sensing elements that provide real-time monitoring of online system operations such that parasitic values are not introduced, which erode performance. Presented is an insitu current sensing circuit with integration to the controller to provide enhanced operational capabilities such as sub-microsecond short circuit protection and power semiconductor device on-state resistance measurement. Techniques developed for measurement and protection are not limited to the tested SiC devices and may be extended to numerous types of critical components. These techniques can provide detailed, real-time state of health estimation for critical components and system capabilities, thus, enhancing system reliability.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"438 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132721156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Short Circuit Fault Induced Failure of SiC MOSFETs in DC Solid-State Circuit Breakers 直流固态断路器中SiC mosfet短路故障诱发失效

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955271

Shuyan Zhao, R. Kheirollahi, Hua Zhang, F. Lu

引用次数: 0

Area-Efficient High-Voltage (HV) Lateral MOSFETs for Discrete Device Development and Power IC Integration 用于分立器件开发和功率IC集成的面积高效高压(HV)横向mosfet

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955284

S. Isukapati, Seung Yup Jang, Woongje Sung

引用次数: 2

Design of High Power Converter with Single Low Ron Discrete SiC Device 单低流道分立SiC器件高功率变换器的设计

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955282

Zibo Chen, Chen Chen, Qingyun Huang, A. Huang

引用次数: 2

Scaling of EPC’s 100 V Enhancement-Mode Power Transistors EPC的100v增强型功率晶体管的缩放

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955253

G. Stecklein, J. Green, Christopher Wong, Joe Cao, B. Beach

引用次数: 0

A Comparison of Short-Circuit Failure Mechanisms of 1.2 kV 4H-SiC MOSFETs and JBSFETs 1.2 kV 4H-SiC mosfet与jbsfet短路失效机理比较

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955302

Dongyoung Kim, Skylar DeBoer, S. Jang, Adam J. Morgan, Woongje Sung

{"title":"A Comparison of Short-Circuit Failure Mechanisms of 1.2 kV 4H-SiC MOSFETs and JBSFETs","authors":"Dongyoung Kim, Skylar DeBoer, S. Jang, Adam J. Morgan, Woongje Sung","doi":"10.1109/WiPDA56483.2022.9955302","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955302","url":null,"abstract":"This paper presents a comparison of 1.2 kV 4H-SiC MOSFETs and Ti JBSFETs with deep P-well structures. For a fair comparison of the short-circuit characteristics between the MOSFETs and JBSFETs, an innovative design approach for the JBSFETs was implemented to obtain the same specific on-resistance to the MOSFETs. To improve the short-circuit characteristics of the MOSFETs and JBSFETs, channeling implantation was conducted to form a deep P-well structure, that helps reduce the maximum saturation current during the shortcircuit event. Using this approach superior short-circuit characteristics are achieved in the MOSFETs and JBSFETs. However, the JBSFETs provide a shorter shortcircuit withstand time than the MOSFETs due to the high leakage current from Schottky contact. Sentaurus 2D TCAD was used to understand and clarify the short-circuit mechanisms of the MOSFETs and JBSFETs. It was discovered that the MOSFETs failed due to the high current in the channel region, but the failure of JBSFETs happens in the Schottky contact. Moreover, solutions to improve the short-circuit characteristics of the JBSFETs are proposed; a narrow Schottky width and high work function metal.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124579350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of a 250°C 15kV Supercascode switch using SiC JFET technology 使用SiC JFET技术开发250°C 15kV超级级联码开关

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955247

David Sanabria, Randy Appert, S. Pronko, J. Major, D. DeVoto, K. Heinselman, J. Lehr, Nicolas Gonzalez, D. Ginley

引用次数: 0

Embedding Solutions for vertical SiC and GaN Power Devices 垂直SiC和GaN功率器件的嵌入解决方案

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955257

Hoang Linh Bach, Anqi Huang, Y. Teng, H. Rauh, A. Schletz, M. Jank, M. März

引用次数: 0

Reverse Breakdown Time of Wide Bandgap Diodes 宽带隙二极管的反向击穿时间

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-01 DOI: 10.1109/WiPDA56483.2022.9955278

J. Flicker, Emily Schrock, R. Kaplar

{"title":"Reverse Breakdown Time of Wide Bandgap Diodes","authors":"J. Flicker, Emily Schrock, R. Kaplar","doi":"10.1109/WiPDA56483.2022.9955278","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955278","url":null,"abstract":"In order to evaluate the time evolution of avalanche breakdown in wide and ultra-wide bandgap devices, we have developed a cable pulser experimental setup that can evaluate the time-evolution of the terminating impedance for a semiconductor device with a time resolution of 130 ps. We have utilized this pulser setup to evaluate the time-to-breakdown of vertical Gallium Nitride and Silicon Carbide diodes for possible use as protection elements in the electrical grid against fast transient voltage pulses (such as those induced by an electromagnetic pulse event). We have found that the Gallium Nitride device demonstrated faster dynamics compared to the Silicon Carbide device, achieving 90% conduction within 1.37 ns compared to the SiC device response time of 2.98 ns. While the Gallium Nitride device did not demonstrate significant dependence of breakdown time with applied voltage, the Silicon Carbide device breakdown time was strongly dependent on applied voltage, ranging from a value of 2.97 ns at 1.33 kV to 0.78 ns at 2.6 kV. The fast response time (< 5 ns) of both the Gallium Nitride and Silicon Carbide devices indicate that both materials systems could meet the stringent response time requirements and may be appropriate for implementation as protection elements against electromagnetic pulse transients.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127013591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0