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2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)最新文献

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An Academic's Perspective on SiC Power Devices: Retrospection and Prognostication 一个学者对SiC功率器件的看法:回顾与展望
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955259
B. Baliga
{"title":"An Academic's Perspective on SiC Power Devices: Retrospection and Prognostication","authors":"B. Baliga","doi":"10.1109/WiPDA56483.2022.9955259","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955259","url":null,"abstract":"The role of an academic in the area of SiC power devices can be categorized as: (1) Fundamental Theoretical Predictions; (2) Fundamental Scientific Knowledge; (3) Fundamental Device Structures; (4) Device Structural Innovations; (5) Device Physics and Analysis; and (6) Technology Feasibility Studies. This paper provides examples of these activities during my past 40 years of effort in this field as a retrospective. New prospective device ideas that will have a strong impact on power electronics in the future are then discussed.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126136600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs 氧化电场应力对商用SiC功率mosfet栅极氧化物可靠性的影响
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955295
Limeng Shi, Tianshi Liu, Shengnan Zhu, Jiashu Qian, Michael Jin, Hema Lata Rao Maddi, M. White, A. Agarwal
{"title":"Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs","authors":"Limeng Shi, Tianshi Liu, Shengnan Zhu, Jiashu Qian, Michael Jin, Hema Lata Rao Maddi, M. White, A. Agarwal","doi":"10.1109/WiPDA56483.2022.9955295","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955295","url":null,"abstract":"In this work, the influence of various oxide electric field (Eox) stress conditions on the gate oxide lifetime, gate leakage current, and threshold voltage of 1.2 kV 4H-SiC power planar metal-oxide-semiconductor field-effect transistors (MOSFETs) is investigated. The results suggest that high Eox stress (> 9.4 MV/cm) applied to the gate oxide of commercial SiC power MOSFETs for a certain period degrades the oxide lifetime due to high Fowler-Nordheim (F-N) electron tunneling current followed by hole trapping. Moreover, hole trapping enhances the gate leakage current and reduces the threshold voltage. Therefore, the generation of holes under high electric field conditions should be avoided to ensure the reliability of SiC power MOSFETs.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121949957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Advancement in Integration for GaN Power ICs GaN功率集成电路的集成研究进展
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955260
T. Ribarich, S. Oliver, M. Giandalia, Llew Vaughan-Edmunds
{"title":"Advancement in Integration for GaN Power ICs","authors":"T. Ribarich, S. Oliver, M. Giandalia, Llew Vaughan-Edmunds","doi":"10.1109/WiPDA56483.2022.9955260","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955260","url":null,"abstract":"In this paper, we discuss how advancements in the integration of gallium nitride (GaN) power ICs leads to faster switching, higher efficiencies, simplifier designs and improved reliability. Navitas’ integrated GaNSense™ technology features provide real-time sensing and protection to achieve these new levels.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132438943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exploring Optimum Designs for 1.2kV 4H-SiC JBS Diode Integrated MOSFETs (JBSFETs) 1.2kV 4H-SiC JBS二极管集成mosfet (jbsfet)优化设计探索
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955290
Stephen A. Mancini, Seung Yup Jang, Dongyoung Kim, Woongje Sung
{"title":"Exploring Optimum Designs for 1.2kV 4H-SiC JBS Diode Integrated MOSFETs (JBSFETs)","authors":"Stephen A. Mancini, Seung Yup Jang, Dongyoung Kim, Woongje Sung","doi":"10.1109/WiPDA56483.2022.9955290","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955290","url":null,"abstract":"Several different designs of 1.2kV-rated 4H-SiC JBS diode integrated MOSFETs (JBSFETs) have been successfully fabricated to increase the 3rd quadrant device performance while maintaining the electrical characteristics on both the forward and blocking modes of operation when compared to its MOSFET counterpart. Incorporating the Schottky area in an efficient manner to improve overall device performance has been a critical path in the development and adoption of 4H-SiC JBSFETs rather than MOSFETs co-packaged with JBS Diodes. Device design, fabrication, and electrical performances are discussed in this paper and as a result, an optimum JBSFET design is proposed.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"23 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129023298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A New Cell Topology for 4H-SiC Planar Power MOSFETs and Comparison with Hexagonal and Octagonal Cell Topologies 一种用于4H-SiC平面功率mosfet的新型单元拓扑及其与六边形和八边形单元拓扑的比较
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955263
Shengnan Zhu, Tianshi Liu, Arash Salemi, Michael Jin, M. White, David Sheridan, A. Agarwal
{"title":"A New Cell Topology for 4H-SiC Planar Power MOSFETs and Comparison with Hexagonal and Octagonal Cell Topologies","authors":"Shengnan Zhu, Tianshi Liu, Arash Salemi, Michael Jin, M. White, David Sheridan, A. Agarwal","doi":"10.1109/WiPDA56483.2022.9955263","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955263","url":null,"abstract":"A new Dodecagonal (polygon with twelve sides, short for Dod) cell topology is designed for 4H-SiC planar power MOSFETs. The Dod cell is used in the layout design of the 650 V SiC MOSFETs. The nominal Hexagonal (Hex) cell and a recently published Octagonal (Oct) cell are also used on the 650 V SiC MOSFET layout designs for comparisons. The devices are fabricated, diced, and packaged for static and dynamic characterizations. Experimental results show that the Hex-cell MOSFET has the lowest specific ON-resistance (Ron,sp) and is suitable for high-power applications. The Dod and Oct-cell MOSFETs have much smaller gate-drain capacitance than Hex-cell MOSFETs, making them good candidates for high-frequency applications. The new Dod cell is designed with optimized channel density to have reduced Ron,sp compared to the Oct cell.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122362418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Frequency High Power Integrated Transformer Design for Resonant Converters with SiC Devices SiC谐振变换器高频大功率集成变压器设计
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955265
Tianlong Yuan, Feng Jin, Zheqing Li, Qiang Li
{"title":"High Frequency High Power Integrated Transformer Design for Resonant Converters with SiC Devices","authors":"Tianlong Yuan, Feng Jin, Zheqing Li, Qiang Li","doi":"10.1109/WiPDA56483.2022.9955265","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955265","url":null,"abstract":"Resonant converters are used extensively for voltage regulation and isolation purposes in electric vehicles. The power level and frequency of the converters is increasing with the ongoing development of the wide-band-gap devices, which brings more challenges to the design of magnetic components. The first challenge is that such high power and frequency make it hard to make proper Litz wire. In this paper, a new current sharing method for paralleled Litz wire transformers is introduced. Using this method, the transformer can stand much higher current without increasing the cost or volume. And the power level can be further increased by integrating more matrix transformers. The second challenge is the resonant inductance integration. Different resonant inductance integration methods are summarized and compared. And controlling the leakage inductance by properly breaking the interleaving structure is proposed in this paper. Using this method, the desired leakage inductance can be reached without sacrificing too much winding loss. Comprehensive transformer design and optimization procedure is also presented in this paper. A 30 kW 100 kHz Serial Half Bridge DC-DC converter prototype is designed to verify the methods at last.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121553646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
100V GaN for Highly Efficient 1kW Motor Drive Applications 100V GaN用于高效1kW电机驱动应用
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955272
A. Kempitiya, Hrach Amirkhanian, Srikanth Yerra, K. Kelkar
{"title":"100V GaN for Highly Efficient 1kW Motor Drive Applications","authors":"A. Kempitiya, Hrach Amirkhanian, Srikanth Yerra, K. Kelkar","doi":"10.1109/WiPDA56483.2022.9955272","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955272","url":null,"abstract":"In this work, Infineon’s 100V 3mΩ CoolGaN™ is evaluated and compared with a 100V similar Rdson MOSFET using OptiMOS™5 silicon technology in a three-phase inverter for battery powered motor drive applications. In order to minimize conduction losses, 30ns dead time is achieved for GaN due to its lower gate and output charge in comparison to 60ns of dead time for silicon. A motor-generator setup is developed to evaluate a 48V drone motor up to ~1kW of inverter power. For a motor speed of 4000RPM, with a bus voltage of 48V and 100 kHz switching frequency, GaN shows higher efficiency across the entire load range. At 1/3rd load (~300W), 98.67% and at full load (~900W) 98.10% power efficiency values are achieved. At light load (~45W), a significant increase of ~5% is also observed in efficiency. This experimentally demonstrates that 100V CoolGaN™ is ideal for developing high frequency switching inverters with high power densities and motor efficiencies in the kilowatt power range.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128092678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Source Turn-off (STO) MOSFET: A New Driving Architecture for Smart SiC Module 源关断(STO) MOSFET:一种新的智能SiC模块驱动架构
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955250
Zhicheng Guo, A. Huang
{"title":"Source Turn-off (STO) MOSFET: A New Driving Architecture for Smart SiC Module","authors":"Zhicheng Guo, A. Huang","doi":"10.1109/WiPDA56483.2022.9955250","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955250","url":null,"abstract":"High-speed and intelligent gate driver is the critical interface between power semiconductor devices and control signals to achieve low switching loss and intelligent protection. The proposed novel Source Turn-Off (STO) MOSFET is a driver integrated MOSFET architecture that can achieve ultra-fast turn-on and turn-off operation beyond traditional voltage source gate driver approach. 1200V SiC STO half bridge was developed to demonstrate the concept. Faster switching speed and lower switching losses are demonstrated. The STO can be readily realized by using commercially available Si power MOS IC which can further enable intelligent functionalities such as build-in current monitoring, temperature monitoring and over current protection which are important for high power SiC modules.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122344263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules 基于SiC分立器件和功率模块的电流源逆变器的比较研究
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955264
Feida Chen, Sangwhee Lee, T. Jahns, B. Sarlioglu
{"title":"Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules","authors":"Feida Chen, Sangwhee Lee, T. Jahns, B. Sarlioglu","doi":"10.1109/WiPDA56483.2022.9955264","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955264","url":null,"abstract":"The purpose of this paper is to investigate the impact of the SiC device packages on the commutation performance characteristics of current-source inverters (CSIs). The parasitic components in the CSI current commutation loop between the two-phase legs and output capacitors have a significant impact on the high-frequency performance of the SiC devices. To meet the elevated current requirements of high-power CSIs, it is often necessary to connect multiple discrete devices in parallel which increases the current commutation loop length. The selection of compact high-power SiC MOSFET and Schottky diode modules instead of discrete devices can be highly desirable to reduce the loop inductance and improve the system performance and power density. Two CSI benchtop prototype units, one with SiC discrete devices and the other with power modules, have been designed and tested, and the performances of the two CSIs are compared. The CSI with SiC power modules significantly reduces the inverter volume and lowers the parasitic inductance by 60% and the voltage ripple amplitude by 20% compared to the CSI unit with discrete devices.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131345476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bidirectional High Voltage Conversion Ratio High-Frequency DC/DC Converter with Low Number of Components 低元件数双向高电压转换比高频DC/DC变换器
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955301
Pedram Chavoshipour Heris, Zahra Saadatizadeh, Rahul Biswash, A. Mantooth
{"title":"Bidirectional High Voltage Conversion Ratio High-Frequency DC/DC Converter with Low Number of Components","authors":"Pedram Chavoshipour Heris, Zahra Saadatizadeh, Rahul Biswash, A. Mantooth","doi":"10.1109/WiPDA56483.2022.9955301","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955301","url":null,"abstract":"In this paper, a coupled-inductor-based bidirectional dc/dc converter is proposed. The proposed converter can achieve a wide conversion ratio range for both step-up and step-down modes by the utilized coupled inductor. A small primary inductor along with the primary capacitor has canceled the input current ripple of the converter on the high current side. This feature would avoid large filters for the terminals. Additionally, the converter has a common-grounded structure between input and output terminals which avoids dv/dt issues. Furthermore, the normalized voltage stress on the switches is lower than the high voltage side of the converter which leads to low switching losses. In this paper, the converter has been analyzed theoretically. The PSCAD/EMTDC simulation results and experimental results of the proposed converter are extracted and presented. The experimental results will be presented in the final version of the paper. It will be implemented for 1MHz frequency operation using GaN to achieve a more compact prototype of the proposed topology.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"246 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123008833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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