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2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)最新文献

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Design of Three-Level Flying Capacitor Totem Pole PFC in USB Type-C Power Delivery for Aircraft Applications 飞机USB Type-C供电中三级飞行电容图腾柱PFC的设计
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955285
Tianyu Zhao, R. Burgos, B. Wen, A. Mclean, Rodrigo Fernández Mattos
{"title":"Design of Three-Level Flying Capacitor Totem Pole PFC in USB Type-C Power Delivery for Aircraft Applications","authors":"Tianyu Zhao, R. Burgos, B. Wen, A. Mclean, Rodrigo Fernández Mattos","doi":"10.1109/WiPDA56483.2022.9955285","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955285","url":null,"abstract":"This paper provides an optimization process of a 100-W three-level flying capacitor totem-pole PFC in USB Type-C Power Delivery (PD) for aircraft applications. The switching frequency and PFC inductor current ripple are varied to set the PFC inductance variation range and design the differential mode (DM) and common mode (CM) filter to meet the EMI requirement in the DO-160 standard. The design process for all the magnetic components is described with results at different switching frequencies and current ripples. The total volume and loss for all cases with both single-stage and two-stage filters are plotted and compared. Pareto fronts for the two cases are drawn to show the optimal design parameters for the application.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124000548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 5 to 50 V, −25 to 225 °C, 0.065%/°C GaN MIS-HEMT Monolithic Compact 2T Voltage Reference 5至50 V， - 25至225°C, 0.065%/°C GaN miss - hemt单片紧凑2T电压基准
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955269
Ziqian Li, Yi Shen, Ang Li, Wen Liu
{"title":"A 5 to 50 V, −25 to 225 °C, 0.065%/°C GaN MIS-HEMT Monolithic Compact 2T Voltage Reference","authors":"Ziqian Li, Yi Shen, Ang Li, Wen Liu","doi":"10.1109/WiPDA56483.2022.9955269","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955269","url":null,"abstract":"Wide-bandgap GaN devices are emerging as promising candidates for high switching frequency, high-voltage applications, and high-temperature operation in smart power conversion systems. This work introduces a monolithic GaN MIS-HEMT-based voltage reference consisting of two transistors (2T), a D-mode and an E-mode device. Experimental results have been obtained that a 2.5 V reference voltage (VREF) is produced for a supply voltage ranging from 5 to 50 V, achieving a maximum VREF line sensitivity of 0.065%/V and a temperature coefficient of 24.6~28.6 ppm/°C from −25 to 225 °C. This structure also shows competitive levels of uniformity, power consumption and flexibility. With the superior characteristics of the GaN device, the presented results will provide stable reference voltage in various sensing and biasing circuits, especially for GaN power ICs.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115293841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of Near Conduction Band SiC/SiO2 Interface Traps in Commercial 4H-SiC Power MOSFETs 商用4H-SiC功率mosfet中近导带SiC/SiO2界面陷阱的表征
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955292
Hema Lata Rao Maddi, S. Nayak, V. Talesara, Yibo Xu, W. Lu, A. Agarwal
{"title":"Characterization of Near Conduction Band SiC/SiO2 Interface Traps in Commercial 4H-SiC Power MOSFETs","authors":"Hema Lata Rao Maddi, S. Nayak, V. Talesara, Yibo Xu, W. Lu, A. Agarwal","doi":"10.1109/WiPDA56483.2022.9955292","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955292","url":null,"abstract":"It is well known that the high density of interface traps (D<inf>it</inf>) near the conduction band (CB) edge limits the net inversion layer charge in the conduction band of a 4H-SiC/SiO<inf>2</inf> MOSFET in strong inversion. Measurements at cryogenic temperatures are necessary to study the presence of interface trap density (D<inf>it</inf>) up to the CB edge. In our study, we extracted the threshold voltage (V<inf>T</inf>) from cryogenic (10 K) to high temperature (500 K) and calculated the V<inf>T</inf> shift which is a measure of interface trapped negative charge (∆Q<inf>it</inf>). This shift in negative charge is used to estimate a relative magnitude of D<inf>it</inf> near the CB edge. The higher the value of ∆V<inf>T</inf>, the higher the D<inf>it</inf> for a given sample.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125879611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of a Switching Event and its Impact on Gate Drive in Gallium-Nitride Based Bi-Directional Switches 氮化镓双向开关中开关事件及其对栅极驱动的影响分析
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955307
Mustafeez ul-Hassan, Yuxuan Wu, F. Luo
{"title":"Analysis of a Switching Event and its Impact on Gate Drive in Gallium-Nitride Based Bi-Directional Switches","authors":"Mustafeez ul-Hassan, Yuxuan Wu, F. Luo","doi":"10.1109/WiPDA56483.2022.9955307","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955307","url":null,"abstract":"Application of wide band gap (WBG) devices in power electronics converters enable high frequency and high-speed operation, together with reduced conduction losses. Gallium-Nitride (GaN) devices are more promising as they offer low chip area, and stable variation of channel resistance. Such devices can be employed in current source inverters (CSI) where two of them need to be connected in anti-series to make a reverse voltage blocking (RVB) switch. RVB switches are not only important in CSIs, but also find their applications in matrix converters, high voltage DC circuit breakers and T-type voltage source inverters. This paper discusses a switching event comprising of turn-on and turn-off phenomenon in RVB switch. Since the impact of layout parasitic onto gate drivers has been a common issue for GaN based converters, the paper presented a switching events, and discussed all the contributors which help or worsen the driving of bi-directional switches.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124484227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Three-level ANPC Inverter Common-mode Voltage Analytical Characterization 三电平ANPC逆变器共模电压分析特性
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955294
Yang Huang, Xinmao Xia, Hua Bai, Fanning Jin, X. Shi, Bing Cheng
{"title":"Three-level ANPC Inverter Common-mode Voltage Analytical Characterization","authors":"Yang Huang, Xinmao Xia, Hua Bai, Fanning Jin, X. Shi, Bing Cheng","doi":"10.1109/WiPDA56483.2022.9955294","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955294","url":null,"abstract":"Evident in previous literature, in the motor drive system, the research on the analytical models for common-mode (CM) performance evaluation is inadequate but needed. Especially for the 3-level inverter system. The majority of work focuses on simulations and experiments. In this paper, an analytical model of CM voltage (CMV) in a 3-level inverter is presented based on Double Fourier Integral (DFI). The model could be extended to different 3-level modulation schemes such as conventional space vector PWM (CSVM), nearest three space vectors modulation (NTSVM), and reduced common-mode voltage modulation (RCMVM). The impact of these three modulation schemes on the CMV is comprehensively compared across varying modulation indices. An 800V/50kW 3L inverter will be built using off-the-shelf automotive-qualified 650V/60A GaN HEMTs from GaN Systems.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130456597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Peak channel temperature determination for an AlGaN/GaN HEMT with Raman Thermography and MTTF extraction for long term reliability 用拉曼热成像和MTTF萃取法测定AlGaN/GaN HEMT的峰值通道温度，以获得长期的可靠性
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955286
C. Miccoli, L. Gervasi, V. Cerantonio, J. Pomeroy, Martin Kuball, F. Iucolano
{"title":"Peak channel temperature determination for an AlGaN/GaN HEMT with Raman Thermography and MTTF extraction for long term reliability","authors":"C. Miccoli, L. Gervasi, V. Cerantonio, J. Pomeroy, Martin Kuball, F. Iucolano","doi":"10.1109/WiPDA56483.2022.9955286","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955286","url":null,"abstract":"Reliability tests are a decisive step for GaN technology qualification. To evaluate the Mean Time to Failure (MTTF), it is necessary to know well the peak channel temperature (Tpeak) reached at the hottest point of the device. For an AlGaN/GaN High Electron Mobility Transistor (HEMT), this region lies at AlGaN/GaN interface where the two-dimensional electron gas (2DEG) is located near the gate contact. InfraRed (IR) Thermography was performed on our GaN on Si HEMT devices to measure Tpeak. Considering the correction in underestimation of Tpeak temperature, the MTTF was extracted. We also performed Raman measurements and Tpeak was evaluated with the aid of 3-Dimensional thermal simulations. The Tpeak difference between IR and Raman technique is more than 100°C and far from the evaluation of about 40-50°C often found in literature. The reliability measurements show a high robustness and from the Raman approach MTTF is approximately 109 hours instead of the 106 hours estimated with the IR method at Tpeak =200°C.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128289852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology 增强型p-GaN门控AlGaN/GaN HEMT技术的高温稳健性
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955304
M. Yuan, Q. Xie, J. Niroula, Mohamed Fadil Isamotu, N. Rajput, N. Chowdhury, Tomás Palacios
{"title":"High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology","authors":"M. Yuan, Q. Xie, J. Niroula, Mohamed Fadil Isamotu, N. Rajput, N. Chowdhury, Tomás Palacios","doi":"10.1109/WiPDA56483.2022.9955304","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955304","url":null,"abstract":"This paper reports on the high temperature (HT) robustness of enhancement-mode (E-mode) p-GaN-gated Al-GaN/GaN high electron mobility transistors (HEMTs), with an emphasis on the key transistor-level parameters for digital and analog mixed-signal applications. In-situ measurements from room temperature (RT) to 500 °C show that trends in Vth, RON, ID,max and IG,max are largely as expected based on first-order changes in the semiconductor properties. The fabricated transistors exhibited stable performance over 20 days at 500 °C. To the best of the authors’ knowledge, this work is the first systematic study on the HT performance of E-mode p-GaN-gated AlGaN/GaN HEMTs, and sheds light on their use in mixed-signal and low-voltage power circuits.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"25 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114132946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Novel High-Voltage-Gain High-Frequency Nonisolated Three-port DC-DC Converter with Zero Input Current Ripple and Soft Switching Capability 具有零输入纹波和软开关能力的新型高压增益高频非隔离三端口DC-DC变换器
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955303
Zahra Saadatizadeh, Pedram Chavoshipour Heris, A. Mantooth
{"title":"Novel High-Voltage-Gain High-Frequency Nonisolated Three-port DC-DC Converter with Zero Input Current Ripple and Soft Switching Capability","authors":"Zahra Saadatizadeh, Pedram Chavoshipour Heris, A. Mantooth","doi":"10.1109/WiPDA56483.2022.9955303","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955303","url":null,"abstract":"In this paper, a novel structure of three-port with zero voltage switching (ZVS) dc-dc converter is proposed. Three-port dc-dc converters are widely applicable in hybrid energy generating systems to provide substantial power to sensitive loads. One of the ports of the proposed converter is interfaced with a storage such as a battery which makes the converter capable of supplying the load even if the main renewable energy supply of the proposed converter (e.g. photovoltaic cells) is not able to generate power. The proposed converter operates in two operations of charging the battery port and the mode when the battery discharges to the load. In addition, it has ZVS operation for all utilized switches and can eliminate the input current ripple. The ZVS of the switches is provided by the leakage inductances of the used coupled inductors. Also, the voltage control of each of the terminals is achieved by three active switches. In this paper, the proposed topology is analyzed theoretically for all operating modes, also, the voltage and current equations of all components are calculated. Furthermore, the required soft switching and zero input currents ripple conditions are analyzed. Finally, the accuracy performance of the proposed converter and the analytical results is verified by the PSCAD/EMTDC simulation and experimental results for 1MHz switching frequency operation. Applying high frequency and using GaN Fets leads to achieve a more compact prototype of the proposed topology.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116221628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Short-Circuit Ruggedness and Partial Discharge Evaluation of a 3.3 kV SiC MOSFET Power Module 3.3 kV SiC MOSFET功率模块的短路耐用性和局部放电评估
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955280
Ke Wang, Yizhou Cong, Pengyu Fu, Xiao Li, Qianyi Cheng, Boxue Hu, Jin Wang, Ashish Kumar, K. Olejniczak, Daniel Pelletier, Z. Cole, A. Deshpande, Amit Goyal
{"title":"Short-Circuit Ruggedness and Partial Discharge Evaluation of a 3.3 kV SiC MOSFET Power Module","authors":"Ke Wang, Yizhou Cong, Pengyu Fu, Xiao Li, Qianyi Cheng, Boxue Hu, Jin Wang, Ashish Kumar, K. Olejniczak, Daniel Pelletier, Z. Cole, A. Deshpande, Amit Goyal","doi":"10.1109/WiPDA56483.2022.9955280","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955280","url":null,"abstract":"This paper presents the initial evaluation of a 3.3-kV, SiC MOSFET power module (not fully populated) from Wolfspeed, including static, short circuit (SC), and partial discharge (PD) test results. Static characterization results are presented first. The module performance change after repetitive pulse SC tests is provided by comparing the original static characterization test results to the one performed after the SC stress tests. More electric aircrafts (MEA) require an increased electric system voltage level (e.g., 230 VAC constant or variable frequency, ± 270 VDC or 540 VDC) and make PD a very relevant and urgent issue. Thus, PD evaluation tests for the module package are included for different air pressures from Sea Level (i.e., 760 Torr) to 50,000 feet (i.e., 87 Torr) altitude. The PD inception voltage (PDIV) and extinction voltage (PDEV) obtained via experimentation are presented in this paper.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125965104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Busbar Design and Optimization for High Power Three-phase Inverter with WBG Device 带WBG器件的大功率三相逆变器母线设计与优化
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI: 10.1109/WiPDA56483.2022.9955261
Yuxuan Wu, Mustafeez ul-Hassan, F. Luo
{"title":"Busbar Design and Optimization for High Power Three-phase Inverter with WBG Device","authors":"Yuxuan Wu, Mustafeez ul-Hassan, F. Luo","doi":"10.1109/WiPDA56483.2022.9955261","DOIUrl":"https://doi.org/10.1109/WiPDA56483.2022.9955261","url":null,"abstract":"The wide-band gap devices can switch at a higher frequency with a higher dV/dt well as improve switching performance. The optimization of busbars can reduce the power loop parasitic which will reduce the overvoltages during the device's state transient. Busbar is not only required to carry and distribute the current to the power module, but also need to provide a path for decouple the high-frequency current ringing and minimize the impact of high-frequency current coupling. This paper introduced a workflow of a high power three-phase inverter design by considering the power converter layout to achieve the maximum power and , and a comparative study between three-different busbar designs is presented.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125942653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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