A 5 to 50 V, −25 to 225 °C, 0.065%/°C GaN MIS-HEMT Monolithic Compact 2T Voltage Reference

Abstract

Wide-bandgap GaN devices are emerging as promising candidates for high switching frequency, high-voltage applications, and high-temperature operation in smart power conversion systems. This work introduces a monolithic GaN MIS-HEMT-based voltage reference consisting of two transistors (2T), a D-mode and an E-mode device. Experimental results have been obtained that a 2.5 V reference voltage (VREF) is produced for a supply voltage ranging from 5 to 50 V, achieving a maximum VREF line sensitivity of 0.065%/V and a temperature coefficient of 24.6~28.6 ppm/°C from −25 to 225 °C. This structure also shows competitive levels of uniformity, power consumption and flexibility. With the superior characteristics of the GaN device, the presented results will provide stable reference voltage in various sensing and biasing circuits, especially for GaN power ICs.