GaN功率集成电路的集成研究进展

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Pub Date : 2022-11-07 DOI:10.1109/WiPDA56483.2022.9955260

T. Ribarich, S. Oliver, M. Giandalia, Llew Vaughan-Edmunds

{"title":"GaN功率集成电路的集成研究进展","authors":"T. Ribarich, S. Oliver, M. Giandalia, Llew Vaughan-Edmunds","doi":"10.1109/WiPDA56483.2022.9955260","DOIUrl":null,"url":null,"abstract":"In this paper, we discuss how advancements in the integration of gallium nitride (GaN) power ICs leads to faster switching, higher efficiencies, simplifier designs and improved reliability. Navitas’ integrated GaNSense™ technology features provide real-time sensing and protection to achieve these new levels.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advancement in Integration for GaN Power ICs\",\"authors\":\"T. Ribarich, S. Oliver, M. Giandalia, Llew Vaughan-Edmunds\",\"doi\":\"10.1109/WiPDA56483.2022.9955260\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we discuss how advancements in the integration of gallium nitride (GaN) power ICs leads to faster switching, higher efficiencies, simplifier designs and improved reliability. Navitas’ integrated GaNSense™ technology features provide real-time sensing and protection to achieve these new levels.\",\"PeriodicalId\":410411,\"journal\":{\"name\":\"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WiPDA56483.2022.9955260\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WiPDA56483.2022.9955260","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在本文中，我们讨论了氮化镓(GaN)功率ic集成的进步如何导致更快的开关，更高的效率，更简单的设计和更高的可靠性。Navitas集成的GaNSense™技术功能提供实时传感和保护，以达到这些新的水平。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Advancement in Integration for GaN Power ICs

In this paper, we discuss how advancements in the integration of gallium nitride (GaN) power ICs leads to faster switching, higher efficiencies, simplifier designs and improved reliability. Navitas’ integrated GaNSense™ technology features provide real-time sensing and protection to achieve these new levels.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)

自引率

0.00%

发文量