Scaling of EPC’s 100 V Enhancement-Mode Power Transistors

Abstract

The same core device model is shown to accurately reproduce the current-voltage and capacitance-voltage characteristics of enhancement-mode GaN 100 V power transistors of various sizes. Using linear scaling, excellent agreement with measurements is achieved over an order of magnitude variation in total gate width. Fractional variation in on-resistance is shown to decrease with increasing transistor size, with implications for integrated circuit-sized transistors where gate width decreases by up to 5 orders of magnitude.