A Highly Integrated Sensorless Field Oriented Control BLDC / PMSM Inverter with 99% Efficiency Enabled by an All-in-one System Integrated Full SiC Intelligent Power Module (sIPM®)

F. Hsu, C. Yen, Hsiang-Ting Hung, Guan-Wei Lin, Chih-Feng Huang, Lung-Sheng Lin, I-Chi Lin, Chih-Fang Huang, Ta-Yung Yang
{"title":"A Highly Integrated Sensorless Field Oriented Control BLDC / PMSM Inverter with 99% Efficiency Enabled by an All-in-one System Integrated Full SiC Intelligent Power Module (sIPM®)","authors":"F. Hsu, C. Yen, Hsiang-Ting Hung, Guan-Wei Lin, Chih-Feng Huang, Lung-Sheng Lin, I-Chi Lin, Chih-Fang Huang, Ta-Yung Yang","doi":"10.1109/WiPDA56483.2022.9955268","DOIUrl":null,"url":null,"abstract":"SiC MOSFETs are a beneficial solution in motor inverter applications because of their remarkable intrinsic diode reverse recovery behavior. SiC MOSFETs have successfully emerged as the best choice as devices for realizing high performance and high power motor drive in, for example, electric vehicles, but have rarely been used in low power motor drive for applications. In this work, an all-in-one system integrated SiC intelligent power module, which integrates the MCU, memory, SRAM, motor control library, ADC, DAC, gate drivers, and SiC MOSFETs was proposed to explore the benefits and potential of SiC MOSFETs in highly integrated BLDC/PMSM motor drive. As a result, SiC solution generally saves over 80% of space, improves the thermal performance by 27.7°C, and enhances 3% of efficiency compared to the silicon counterparts.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WiPDA56483.2022.9955268","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

SiC MOSFETs are a beneficial solution in motor inverter applications because of their remarkable intrinsic diode reverse recovery behavior. SiC MOSFETs have successfully emerged as the best choice as devices for realizing high performance and high power motor drive in, for example, electric vehicles, but have rarely been used in low power motor drive for applications. In this work, an all-in-one system integrated SiC intelligent power module, which integrates the MCU, memory, SRAM, motor control library, ADC, DAC, gate drivers, and SiC MOSFETs was proposed to explore the benefits and potential of SiC MOSFETs in highly integrated BLDC/PMSM motor drive. As a result, SiC solution generally saves over 80% of space, improves the thermal performance by 27.7°C, and enhances 3% of efficiency compared to the silicon counterparts.
采用一体化系统集成全SiC智能功率模块(sIPM®)实现效率99%的高集成度无传感器场定向控制BLDC / PMSM逆变器
SiC mosfet由于其卓越的二极管反向恢复性能,在电机逆变器应用中是一种有益的解决方案。SiC mosfet已经成功地成为实现高性能和高功率电机驱动的最佳选择,例如,电动汽车,但很少用于低功率电机驱动的应用。在这项工作中,提出了一个集成了MCU、存储器、SRAM、电机控制库、ADC、DAC、栅极驱动器和SiC mosfet的一体化系统集成SiC智能功率模块,以探索SiC mosfet在高度集成的BLDC/PMSM电机驱动中的优势和潜力。因此,与硅相比,SiC解决方案通常节省了80%以上的空间,提高了27.7°C的热性能,并提高了3%的效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信