F. Hsu, C. Yen, Hsiang-Ting Hung, Guan-Wei Lin, Chih-Feng Huang, Lung-Sheng Lin, I-Chi Lin, Chih-Fang Huang, Ta-Yung Yang
{"title":"采用一体化系统集成全SiC智能功率模块(sIPM®)实现效率99%的高集成度无传感器场定向控制BLDC / PMSM逆变器","authors":"F. Hsu, C. Yen, Hsiang-Ting Hung, Guan-Wei Lin, Chih-Feng Huang, Lung-Sheng Lin, I-Chi Lin, Chih-Fang Huang, Ta-Yung Yang","doi":"10.1109/WiPDA56483.2022.9955268","DOIUrl":null,"url":null,"abstract":"SiC MOSFETs are a beneficial solution in motor inverter applications because of their remarkable intrinsic diode reverse recovery behavior. SiC MOSFETs have successfully emerged as the best choice as devices for realizing high performance and high power motor drive in, for example, electric vehicles, but have rarely been used in low power motor drive for applications. In this work, an all-in-one system integrated SiC intelligent power module, which integrates the MCU, memory, SRAM, motor control library, ADC, DAC, gate drivers, and SiC MOSFETs was proposed to explore the benefits and potential of SiC MOSFETs in highly integrated BLDC/PMSM motor drive. As a result, SiC solution generally saves over 80% of space, improves the thermal performance by 27.7°C, and enhances 3% of efficiency compared to the silicon counterparts.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Highly Integrated Sensorless Field Oriented Control BLDC / PMSM Inverter with 99% Efficiency Enabled by an All-in-one System Integrated Full SiC Intelligent Power Module (sIPM®)\",\"authors\":\"F. Hsu, C. Yen, Hsiang-Ting Hung, Guan-Wei Lin, Chih-Feng Huang, Lung-Sheng Lin, I-Chi Lin, Chih-Fang Huang, Ta-Yung Yang\",\"doi\":\"10.1109/WiPDA56483.2022.9955268\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SiC MOSFETs are a beneficial solution in motor inverter applications because of their remarkable intrinsic diode reverse recovery behavior. SiC MOSFETs have successfully emerged as the best choice as devices for realizing high performance and high power motor drive in, for example, electric vehicles, but have rarely been used in low power motor drive for applications. In this work, an all-in-one system integrated SiC intelligent power module, which integrates the MCU, memory, SRAM, motor control library, ADC, DAC, gate drivers, and SiC MOSFETs was proposed to explore the benefits and potential of SiC MOSFETs in highly integrated BLDC/PMSM motor drive. As a result, SiC solution generally saves over 80% of space, improves the thermal performance by 27.7°C, and enhances 3% of efficiency compared to the silicon counterparts.\",\"PeriodicalId\":410411,\"journal\":{\"name\":\"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WiPDA56483.2022.9955268\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WiPDA56483.2022.9955268","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
SiC mosfet由于其卓越的二极管反向恢复性能,在电机逆变器应用中是一种有益的解决方案。SiC mosfet已经成功地成为实现高性能和高功率电机驱动的最佳选择,例如,电动汽车,但很少用于低功率电机驱动的应用。在这项工作中,提出了一个集成了MCU、存储器、SRAM、电机控制库、ADC、DAC、栅极驱动器和SiC mosfet的一体化系统集成SiC智能功率模块,以探索SiC mosfet在高度集成的BLDC/PMSM电机驱动中的优势和潜力。因此,与硅相比,SiC解决方案通常节省了80%以上的空间,提高了27.7°C的热性能,并提高了3%的效率。
A Highly Integrated Sensorless Field Oriented Control BLDC / PMSM Inverter with 99% Efficiency Enabled by an All-in-one System Integrated Full SiC Intelligent Power Module (sIPM®)
SiC MOSFETs are a beneficial solution in motor inverter applications because of their remarkable intrinsic diode reverse recovery behavior. SiC MOSFETs have successfully emerged as the best choice as devices for realizing high performance and high power motor drive in, for example, electric vehicles, but have rarely been used in low power motor drive for applications. In this work, an all-in-one system integrated SiC intelligent power module, which integrates the MCU, memory, SRAM, motor control library, ADC, DAC, gate drivers, and SiC MOSFETs was proposed to explore the benefits and potential of SiC MOSFETs in highly integrated BLDC/PMSM motor drive. As a result, SiC solution generally saves over 80% of space, improves the thermal performance by 27.7°C, and enhances 3% of efficiency compared to the silicon counterparts.