2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070)最新文献_第7页

Feasibility of surface activated bonding for ultra-fine pitch interconnection-a new concept of bump-less direct bonding for system level packaging 超细间距互连表面活化键合的可行性——系统级封装无凸点直接键合的新概念

2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070) Pub Date : 2000-05-21 DOI: 10.1109/ECTC.2000.853235

T. Suga

引用次数: 34

Selecting methods for packing, shipping, and handling of low cost good die 选择低成本优质模具的包装、运输和处理方法

2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070) Pub Date : 2000-05-21 DOI: 10.1109/ECTC.2000.853257

C.E. Gutentag, R. Sierra

引用次数: 4

A compact, low-cost WDM transceiver for the LAN 一种用于局域网的紧凑、低成本的WDM收发器

2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070) Pub Date : 2000-05-21 DOI: 10.1109/ECTC.2000.853237

Brian E. Lemoff, L. Buckman, Andrew, Schmit, D. Dolfi

引用次数: 24

Packaging technology for high performance CMOS server Fujitsu GS8900 富士通GS8900高性能CMOS服务器封装技术

2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070) Pub Date : 2000-05-21 DOI: 10.1109/ECTC.2000.853275

A. Fujisaki, M. Suzuki, H. Yamamoto

{"title":"Packaging technology for high performance CMOS server Fujitsu GS8900","authors":"A. Fujisaki, M. Suzuki, H. Yamamoto","doi":"10.1109/ECTC.2000.853275","DOIUrl":"https://doi.org/10.1109/ECTC.2000.853275","url":null,"abstract":"Corresponding to high performance single-chip CPUs adopting 0.18 um process and copper wiring, high density wiring and multi terminal MCMs, on which the CPU and large capacity second caches can be mounted up to 4 pairs, have been newly developed. As for LSIs, bare chips are directly mounted on MCM substrates with 153 um pitch high density area bumps. The maximum LSI terminal count is more than 10,000. LSIs are connected to one another by multi layer high density fine pitch wiring, which are all made of copper and formed in thin films of MCM substrates. The supporting technologies, such as a high density multi terminal connector for the MCM, and a multi layer system mother board of high speed signal transmission correspondence where 16 CPUs and 64 GB main memories can be mounted for a maximum configuration, have been developed. Meanwhile, two kinds of newly developed lead free solders are applied in the system packaging considering of the environment protection. The following two methods have been developed in cooling technique. The high performance thermosyphon has been developed and adopted in the general air-cooled system. Moreover, in order to draw out the performance to its maximum by using the characteristics of CMOS LSI, a low temperature liquid cooling method, using a coolant around 0 degrees C, has been newly adopted to practical use in the large-scale system. With the liquid cooling scheme, not only the installation and maintainability are realized being equal to that for air-cooling, but also high reliability is achieved by a redundant cooling system that cools two or more MCMs.","PeriodicalId":410140,"journal":{"name":"2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124944001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Development of flex stackable carriers 柔性可堆叠载体的研制

2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070) Pub Date : 2000-05-21 DOI: 10.1109/ECTC.2000.853181

H. Isaak, P. Uka

引用次数: 3

Wire pull on fine pitch pads: an obsolete test for first bond integrity 细间距衬垫上的拉丝:一种过时的第一键完整性测试

2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070) Pub Date : 2000-05-21 DOI: 10.1109/ECTC.2000.853187

V. Sundararaman, D. Edwards, W.E. Subido, H.R. Test

{"title":"Wire pull on fine pitch pads: an obsolete test for first bond integrity","authors":"V. Sundararaman, D. Edwards, W.E. Subido, H.R. Test","doi":"10.1109/ECTC.2000.853187","DOIUrl":"https://doi.org/10.1109/ECTC.2000.853187","url":null,"abstract":"This work focuses on the validity and applicability of the wire pull test being used as a measure of first bond integrity of wire bonds on fine pitch pads used in advanced silicon technology devices. The effect of geometry of the wire bond is studied by considering variations in the angle of force application during the wire pull test and the presence of nonintermetallic region (de-bonds) created by a probe mark under the ball. This paper does not address the effects of the silicon-level interconnect structure underneath the bond-pads, i.e., it is assumed that the underlying structure is defect-free, and the layers of interconnect metal and interlayer dielectric (ILD) are modeled along with the silicon as a smeared homogeneous material. Experimental data that corroborate the findings from the finite element analyses are also presented. Results from this work indicate that if the wire pull test is applied for smaller ball diameters, some incidence of unconventional failure mechanisms, such as cohesive failure of the ILD, is to be expected and allowed. A wire pull should only be considered a failure if the ball lifts and shows poor intermetallic formation or if the wire pull fails at a pull-force substantially below the \"norm\" for that ball diameter.","PeriodicalId":410140,"journal":{"name":"2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122738963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 18

Failure mechanisms of flip chip DCA assembly using eutectic solder 使用共晶焊料的倒装DCA组件的失效机制

2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070) Pub Date : 2000-05-21 DOI: 10.1109/ECTC.2000.853120

Q. Tan, Rebecca Cole, A. Mistry, C. Beddingfield

引用次数: 6

The solder joint and runner metal reliability of wafer-level CSP (Omega-CSP) 晶圆级CSP (Omega-CSP)的焊点和流道金属可靠性

2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070) Pub Date : 2000-05-21 DOI: 10.1109/ECTC.2000.853124

I. Kang, Jong-heon Kim, I. S. Park, Ki-Rok Hur, Soon-Jin Cho, H. Han, Jin Yu

引用次数: 15

Influence of chemistry and applied stress on reliability of polymer and substrate interfaces 化学和外加应力对聚合物和衬底界面可靠性的影响

2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070) Pub Date : 2000-05-21 DOI: 10.1109/ECTC.2000.853217

S. Leung, S. Luo, D. Lam, C. Wong

{"title":"Influence of chemistry and applied stress on reliability of polymer and substrate interfaces","authors":"S. Leung, S. Luo, D. Lam, C. Wong","doi":"10.1109/ECTC.2000.853217","DOIUrl":"https://doi.org/10.1109/ECTC.2000.853217","url":null,"abstract":"Epoxy-based underfills in flip-chip assembly have been widely employed to enhance electronic package reliability. Addition of coupling agent in the underfill encapsulant can increase the adhesive bonding by introducing chemical bonding across the interface. The stability of this interfacial bonding is depended on the active chemicals and residual stress from curing and thermal mismatch present at the interface. The effects of chemicals and stresses have been independently observed to accelerate debonding. A model of the combined influence of stress and chemistry on the debonding rate has been proposed, but data on the combined influence of chemical and stress are not available. In this study, the stress-assisted interfacial debonding of epoxy adhesives is quantified. Underfill adhesives with silane coupling agent, titanate coupling agent, and zirconate coupling agent were characterized. Basic material properties including the curing behavior, coefficient of thermal expansion, glass transition temperature, elastic modulus and moisture absorption profile were measured by differential scanning calorimetry, thermal mechanical analysis, 3-point bending test and dynamic mechanical analysis. Debonding rates of adhesives under varied applied stress conditions were characterized using tapered double cantilever beam specimens. The implications of the data and the kinetic parameters on material choices are discussed with respect to electronic packaging reliability.","PeriodicalId":410140,"journal":{"name":"2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126499777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

800 Mbit/s/ch/spl times/12 ch, true DC-coupled parallel optical interconnects using single-mode fiber and 1310 nm LD array 800mbit /s/ch/spl times/ 12ch，使用单模光纤和1310nm LD阵列实现真正的dc耦合并行光互连

2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070) Pub Date : 2000-05-21 DOI: 10.1109/ECTC.2000.853202

A. Takai, H. Furuichi, A. Miura, K. Tonehira, K. Kawamoto, S. Ueno, Y. Fukashiro, T. Haga, T. Toyonaka, K. Yamada, T. Suejima, K. Saitoh

引用次数: 6