Progress in Crystal Growth and Characterization of Materials最新文献_第9页

Diamond epitaxy: Basics and applications 金刚石外延:基础和应用

IF 5.1 2区材料科学

Progress in Crystal Growth and Characterization of Materials Pub Date : 2016-06-01 DOI: 10.1016/j.pcrysgrow.2016.04.017

Makoto Kasu

引用次数: 26

In-situ observation of crystal growth and the mechanism 晶体生长的原位观察及其机理

IF 5.1 2区材料科学

Progress in Crystal Growth and Characterization of Materials Pub Date : 2016-06-01 DOI: 10.1016/j.pcrysgrow.2016.04.005

Katsuo Tsukamoto

{"title":"In-situ observation of crystal growth and the mechanism","authors":"Katsuo Tsukamoto","doi":"10.1016/j.pcrysgrow.2016.04.005","DOIUrl":"https://doi.org/10.1016/j.pcrysgrow.2016.04.005","url":null,"abstract":"<div>The spatial and time resolution in the measurements of growth rates and the observation of surface morphologies and the associated transport phenomena reflecting their growth mechanism have been developed because advanced microscopes and interferometers have attained nano-scale resolution. The first part covers the historical background how in-situ observation of crystal growth at molecular-level by optical and other scanning methods had been developed for understanding of crystal growth by measuring crystal growth rates and by observing surface nano-topographies, such as growth steps and spiral hillocks, with the same vertical resolutions comparable to that of the scanning probe microscopic techniques. The potential of recently developed interferometric techniques, such as Phase-Shift Interferometry (PSI) is then reviewed with the principle of the optics. Capability of measuring growth rates of crystals as low as 10−5 nm/s (1 µm/year) is introduced. Second part of the article emphasizes basic interferometric technique for the understanding of crystal growth mechanism by measuring growth rate vs supersaturation. Utilization of these techniques not only in fundamental crystal growth fields but also in environmental sciences, space sciences and crystallization in microgravity would briefly be introduced. At the end, we select a few examples how growth mechanism was analyzed based on these kinetic measurements.</div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"62 2","pages":"Pages 111-125"},"PeriodicalIF":5.1,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.005","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2706065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

Nucleation of protein crystals 蛋白质晶体的成核

IF 5.1 2区材料科学

Progress in Crystal Growth and Characterization of Materials Pub Date : 2016-06-01 DOI: 10.1016/j.pcrysgrow.2016.04.007

Peter G. Vekilov

{"title":"Nucleation of protein crystals","authors":"Peter G. Vekilov","doi":"10.1016/j.pcrysgrow.2016.04.007","DOIUrl":"https://doi.org/10.1016/j.pcrysgrow.2016.04.007","url":null,"abstract":"<div>Protein crystal nucleation is a central problem in biological crystallography and other areas of science, technology, and medicine. Recent studies have demonstrated that protein crystal nuclei form within crucial precursors. Data for several proteins provided by these methods have demonstrated that the nucleation precursors are clusters consisting of protein dense liquid, which are metastable with respect to the host protein solution. The clusters are several hundred nanometers in size, they occupy from 10−7 to 10−3 of the solution volume, and their properties in solutions supersaturated with respect to crystals are similar to those in homogeneous, i.e., undersaturated, solutions. The clusters exist due to the conformation flexibility of the protein molecules, leading to the exposure of hydrophobic surfaces and enhanced intermolecular binding. These results indicate that protein conformational flexibility might be the mechanism behind the metastable mesoscopic clusters and crystal nucleation. The investigations of the cluster properties are still in their infancy. Results on direct imaging of cluster behaviors and characterization of cluster mechanisms with a variety of proteins will soon lead to major breakthroughs in protein biophysics.</div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"62 2","pages":"Pages 136-154"},"PeriodicalIF":5.1,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.007","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2600875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 31

Observing crystal growth processes in computer simulations 用计算机模拟观察晶体生长过程

IF 5.1 2区材料科学

Progress in Crystal Growth and Characterization of Materials Pub Date : 2016-06-01 DOI: 10.1016/j.pcrysgrow.2016.04.023

Hiroki Nada , Hitoshi Miura , Jun Kawano , Toshiharu Irisawa

引用次数: 4

Microchannel epitaxy 微通道外延

IF 5.1 2区材料科学

Progress in Crystal Growth and Characterization of Materials Pub Date : 2016-06-01 DOI: 10.1016/j.pcrysgrow.2016.04.016

Shigeya Naritsuka

{"title":"Microchannel epitaxy","authors":"Shigeya Naritsuka","doi":"10.1016/j.pcrysgrow.2016.04.016","DOIUrl":"https://doi.org/10.1016/j.pcrysgrow.2016.04.016","url":null,"abstract":"<div>Microchannel epitaxy (MCE) is an outstanding technique for dislocation reduction during heteroepitaxial growth when there is a large lattice mismatch. This paper describes the MCE mechanism in detail together with experimental results. Directional growth is a principal concern of MCE, and is enabled through the assessment and control of the elementary processes of crystal growth. Vertical microchannel epitaxy (V-MCE) involves perpendicular growth relative to a substrate, from microchannels established as openings in a mask, while horizontal microchannel epitaxy (H-MCE) is growth parallel to the substrate surface. Even if many dislocations are present in the microchannels, directional growth vastly reduces their number in the grown crystal. MCE is beneficial for the fabrication of devices, as well as the quantitative study of the fundamental processes involved in crystal growth. This paper quantitatively discusses the growth mechanism involved in H-MCE of GaAs in the thickness direction. Fitting the forms of spiral steps observed on flat surfaces at an atomic level enables the accurate derivation of surface supersaturation at the time of growth. Moreover, since a simple mechanism for controlling growth in the vertical direction can be established for H-MCE with a single step source, quantitative discussion of crystal-growth mechanisms is now possible.</div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"62 2","pages":"Pages 302-316"},"PeriodicalIF":5.1,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.016","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2600880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bulk and epitaxial growth of silicon carbide 碳化硅的体积和外延生长

IF 5.1 2区材料科学

Progress in Crystal Growth and Characterization of Materials Pub Date : 2016-06-01 DOI: 10.1016/j.pcrysgrow.2016.04.018

Tsunenobu Kimoto

{"title":"Bulk and epitaxial growth of silicon carbide","authors":"Tsunenobu Kimoto","doi":"10.1016/j.pcrysgrow.2016.04.018","DOIUrl":"https://doi.org/10.1016/j.pcrysgrow.2016.04.018","url":null,"abstract":"<div>Silicon carbide (SiC) is a wide bandgap semiconductor having high critical electric field strength, making it especially attractive for high-power and high-temperature devices. Recent development of SiC devices relies on rapid progress in bulk and epitaxial growth technology of high-quality SiC crystals. At present, the standard technique for SiC bulk growth is the seeded sublimation method. In spite of difficulties in the growth at very high temperature above 2300 °C, 150-mm-diameter SiC wafers are currently produced. Through extensive growth simulation studies and minimizing thermal stress during sublimation growth, the dislocation density of SiC wafers has been reduced to 3000–5000 cm−2 or lower. Homoepitaxial growth of SiC by chemical vapor deposition has shown remarkable progress, with polytype replication and wide range control of doping densities (1014–1019 cm−3) in both n- and p-type materials, which was achieved using step-flow growth and controlling the C/Si ratio, respectively. Types and structures of major extended and point defects in SiC epitaxial layers have been investigated, and basic phenomena of defect generation and reduction during SiC epitaxy have been clarified. In this paper, the fundamental aspects and technological developments involved in SiC bulk and homoepitaxial growth are reviewed.</div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"62 2","pages":"Pages 329-351"},"PeriodicalIF":5.1,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.018","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2343844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 94

In-situ observation of crystal surfaces by optical microscopy 用光学显微镜对晶体表面进行原位观察

IF 5.1 2区材料科学

Progress in Crystal Growth and Characterization of Materials Pub Date : 2016-06-01 DOI: 10.1016/j.pcrysgrow.2016.04.024

Gen Sazaki, Ken Nagashima, Ken-ichiro Murata, Yoshinori Furukawa

引用次数: 3

In-situ liquid phase TEM observations of nucleation and growth processes 原位液相TEM观察成核和生长过程

IF 5.1 2区材料科学

Progress in Crystal Growth and Characterization of Materials Pub Date : 2016-06-01 DOI: 10.1016/j.pcrysgrow.2016.04.003

James J. De Yoreo

引用次数: 37

Fundamentals and engineering of defects 缺陷的基础和工程

IF 5.1 2区材料科学

Progress in Crystal Growth and Characterization of Materials Pub Date : 2016-06-01 DOI: 10.1016/j.pcrysgrow.2016.04.004

Peter Rudolph

{"title":"Fundamentals and engineering of defects","authors":"Peter Rudolph","doi":"10.1016/j.pcrysgrow.2016.04.004","DOIUrl":"https://doi.org/10.1016/j.pcrysgrow.2016.04.004","url":null,"abstract":"<div>An overview of the important defect types, their origins and interactions during the bulk crystal growth from the melt and selected epitaxial processes is given. The equilibrium and nonequilibrium thermodynamics, kinetics and interaction principles are considered as driving forces of defect generation, incorporation and assembling. Results of modeling and practical in situ control are presented. Strong emphasis is given to semiconductor crystal growth since it is from this class of materials that most has been first learned, the resulting knowledge then having been applied to other classes of material. The treatment starts with melt-structure considerations and zero-dimensional defect types, i.e. native and extrinsic point defects. Their generation and incorporation mechanisms are discussed. Micro- and macro-segregation phenomena – striations and the effect of constitutional supercooling – are added. Dislocations and their patterning are discussed next. The role of high-temperature dislocation dynamics for collective interactions, like cell structuring and bunching, is specified. Additionally, some features of epitaxial dislocation kinetics and engineering are illustrated. Next the grain boundary formation mechanisms, such as dynamic polygonization and interface instabilities, are discussed. The interplay between facets, inhomogeneous dopant incorporations and twinning is shown. Finally, second phase precipitation and inclusion trapping are discussed. The importance of in situ stoichiometry control is underlined. Generally, selected measures of defect engineering are given at the end of each sub-chapter.</div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"62 2","pages":"Pages 89-110"},"PeriodicalIF":5.1,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.004","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3385831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 25

III-V compound semiconductors: Growth and structures III-V型化合物半导体:生长与结构

IF 5.1 2区材料科学

Progress in Crystal Growth and Characterization of Materials Pub Date : 2016-06-01 DOI: 10.1016/j.pcrysgrow.2016.04.019

Thomas F. Kuech

引用次数: 40