微通道外延

IF 4.5 2区 材料科学 Q1 CRYSTALLOGRAPHY
Shigeya Naritsuka
{"title":"微通道外延","authors":"Shigeya Naritsuka","doi":"10.1016/j.pcrysgrow.2016.04.016","DOIUrl":null,"url":null,"abstract":"<div><p><span>Microchannel epitaxy<span> (MCE) is an outstanding technique for dislocation reduction during heteroepitaxial growth when there is a large lattice mismatch. This paper describes the MCE mechanism in detail together with experimental results. Directional growth is a principal concern of MCE, and is enabled through the assessment and control of the elementary processes of crystal growth. Vertical microchannel epitaxy (V-MCE) involves perpendicular growth relative to a substrate, from microchannels established as openings in a mask, while horizontal microchannel epitaxy (H-MCE) is growth parallel to the substrate surface. Even if many dislocations are present in the microchannels, directional growth vastly reduces their number in the grown crystal. MCE is beneficial for the fabrication of devices, as well as the quantitative study of the fundamental processes involved in crystal growth. This paper quantitatively discusses the growth mechanism involved in H-MCE of GaAs in the thickness direction. Fitting the forms of spiral steps observed on flat surfaces at an atomic level enables the accurate derivation of surface </span></span>supersaturation at the time of growth. Moreover, since a simple mechanism for controlling growth in the vertical direction can be established for H-MCE with a single step source, quantitative discussion of crystal-growth mechanisms is now possible.</p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":null,"pages":null},"PeriodicalIF":4.5000,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.016","citationCount":"0","resultStr":"{\"title\":\"Microchannel epitaxy\",\"authors\":\"Shigeya Naritsuka\",\"doi\":\"10.1016/j.pcrysgrow.2016.04.016\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p><span>Microchannel epitaxy<span> (MCE) is an outstanding technique for dislocation reduction during heteroepitaxial growth when there is a large lattice mismatch. This paper describes the MCE mechanism in detail together with experimental results. Directional growth is a principal concern of MCE, and is enabled through the assessment and control of the elementary processes of crystal growth. Vertical microchannel epitaxy (V-MCE) involves perpendicular growth relative to a substrate, from microchannels established as openings in a mask, while horizontal microchannel epitaxy (H-MCE) is growth parallel to the substrate surface. Even if many dislocations are present in the microchannels, directional growth vastly reduces their number in the grown crystal. MCE is beneficial for the fabrication of devices, as well as the quantitative study of the fundamental processes involved in crystal growth. This paper quantitatively discusses the growth mechanism involved in H-MCE of GaAs in the thickness direction. Fitting the forms of spiral steps observed on flat surfaces at an atomic level enables the accurate derivation of surface </span></span>supersaturation at the time of growth. Moreover, since a simple mechanism for controlling growth in the vertical direction can be established for H-MCE with a single step source, quantitative discussion of crystal-growth mechanisms is now possible.</p></div>\",\"PeriodicalId\":409,\"journal\":{\"name\":\"Progress in Crystal Growth and Characterization of Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.5000,\"publicationDate\":\"2016-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.016\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Progress in Crystal Growth and Characterization of Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0960897416300195\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Progress in Crystal Growth and Characterization of Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0960897416300195","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0

摘要

微通道外延(MCE)是在异质外延生长过程中减少位错的一种杰出技术。本文详细介绍了MCE的机理,并给出了实验结果。定向生长是MCE的主要关注点,通过对晶体生长基本过程的评估和控制来实现。垂直微通道外延(V-MCE)涉及相对于衬底的垂直生长,从微通道建立为掩膜中的开口,而水平微通道外延(H-MCE)是平行于衬底表面的生长。即使微通道中存在许多位错,定向生长也会大大减少其在生长晶体中的数量。MCE有利于器件的制造,也有利于晶体生长基本过程的定量研究。本文从厚度方向定量讨论了砷化镓H-MCE的生长机理。在原子水平上拟合在平面上观察到的螺旋台阶的形式,可以精确地推导生长时的表面过饱和。此外,由于可以用单步源建立控制H-MCE垂直方向生长的简单机制,现在可以定量讨论晶体生长机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microchannel epitaxy

Microchannel epitaxy (MCE) is an outstanding technique for dislocation reduction during heteroepitaxial growth when there is a large lattice mismatch. This paper describes the MCE mechanism in detail together with experimental results. Directional growth is a principal concern of MCE, and is enabled through the assessment and control of the elementary processes of crystal growth. Vertical microchannel epitaxy (V-MCE) involves perpendicular growth relative to a substrate, from microchannels established as openings in a mask, while horizontal microchannel epitaxy (H-MCE) is growth parallel to the substrate surface. Even if many dislocations are present in the microchannels, directional growth vastly reduces their number in the grown crystal. MCE is beneficial for the fabrication of devices, as well as the quantitative study of the fundamental processes involved in crystal growth. This paper quantitatively discusses the growth mechanism involved in H-MCE of GaAs in the thickness direction. Fitting the forms of spiral steps observed on flat surfaces at an atomic level enables the accurate derivation of surface supersaturation at the time of growth. Moreover, since a simple mechanism for controlling growth in the vertical direction can be established for H-MCE with a single step source, quantitative discussion of crystal-growth mechanisms is now possible.

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来源期刊
Progress in Crystal Growth and Characterization of Materials
Progress in Crystal Growth and Characterization of Materials 工程技术-材料科学:表征与测试
CiteScore
8.80
自引率
2.00%
发文量
10
审稿时长
1 day
期刊介绍: Materials especially crystalline materials provide the foundation of our modern technologically driven world. The domination of materials is achieved through detailed scientific research. Advances in the techniques of growing and assessing ever more perfect crystals of a wide range of materials lie at the roots of much of today''s advanced technology. The evolution and development of crystalline materials involves research by dedicated scientists in academia as well as industry involving a broad field of disciplines including biology, chemistry, physics, material sciences and engineering. Crucially important applications in information technology, photonics, energy storage and harvesting, environmental protection, medicine and food production require a deep understanding of and control of crystal growth. This can involve suitable growth methods and material characterization from the bulk down to the nano-scale.
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