Progress in Crystal Growth and Characterization of Materials最新文献

{"title":"Polymorphism of edible fat crystals","authors":"Hironori Hondoh,&nbsp;Satoru Ueno","doi":"10.1016/j.pcrysgrow.2016.04.021","DOIUrl":"https://doi.org/10.1016/j.pcrysgrow.2016.04.021","url":null,"abstract":"<div><p>The course focuses on the polymorphism and polymorphic transformation of edible fat crystals, such as chocolate. The morphology, crystallization behavior and polymorphic transformation will be observed under optical microscopy, and melting point of each polymorph will be determined.</p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"62 2","pages":"Pages 398-399"},"PeriodicalIF":5.1,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.021","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3385835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth of semiconductor silicon crystals","authors":"Koichi Kakimoto,&nbsp;Bing Gao,&nbsp;Xin Liu,&nbsp;Satoshi Nakano","doi":"10.1016/j.pcrysgrow.2016.04.014","DOIUrl":"https://doi.org/10.1016/j.pcrysgrow.2016.04.014","url":null,"abstract":"<div><p>This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon<span> for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects<span>. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems.</span></span></p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"62 2","pages":"Pages 273-285"},"PeriodicalIF":5.1,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.014","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2005507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermodynamics -for understanding crystal growth-","authors":"Tatau Nishinaga","doi":"10.1016/j.pcrysgrow.2016.04.001","DOIUrl":"https://doi.org/10.1016/j.pcrysgrow.2016.04.001","url":null,"abstract":"<div><p>To understand what entropy is, thermodynamical entropy was derived from Boltzmann's entropy formula. After defining the Helmholtz and the Gibbs free energies, we calculated the formation Gibbs free energies of an equilibrium and a non-equilibrium nucleus following Toschev's approach taking a water droplet as an example. It is demonstrated that the Gibbs free energy for the formation of a cluster takes the maximum as the cluster radius is increased. The cluster at this maximum is called critical nucleus.</p><p>Thermodynamics is also a useful tool to obtain the rate of crystal growth in a vapor phase. The partial pressures of all gaseous species are calculated by solving equations given by the law of mass action and the initial conditions. The mathematical formulas to give the growth rates in a closed tube and in a gas flow system are derived.</p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"62 2","pages":"Pages 43-57"},"PeriodicalIF":5.1,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.001","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2706064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Three study cases of growth morphology in minerals: Halite, calcite and gypsum","authors":"Dino Aquilano ,&nbsp;Fermín Otálora ,&nbsp;Linda Pastero ,&nbsp;Juan Manuel García-Ruiz","doi":"10.1016/j.pcrysgrow.2016.04.012","DOIUrl":"https://doi.org/10.1016/j.pcrysgrow.2016.04.012","url":null,"abstract":"<div><p>Beyond fundamental aspects of crystal growth and morphology, the growth of minerals is a challenging subject because in most cases we face a problem with unknown growth conditions. Actually, in the field of geological studies, we have to decipher the growth conditions of a crystal using the information contained in the very crystal. One of these characteristics of crystals that contain information about their growth is their morphology and time evolution. In this article, we introduce the subject of crystal morphology by using three important minerals, calcite, halite and gypsum, as three didactic case studies to illustrate the application of the current knowledge in the field.</p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"62 2","pages":"Pages 227-251"},"PeriodicalIF":5.1,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.012","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2600879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Selective nucleation and self-organized crystallization","authors":"Fei Jia,&nbsp;Di Zhao,&nbsp;Mu Wang","doi":"10.1016/j.pcrysgrow.2016.04.013","DOIUrl":"https://doi.org/10.1016/j.pcrysgrow.2016.04.013","url":null,"abstract":"<div><p>Nucleation is an important step in crystallization, and many self-organized patterns are determined in this process. In this study, after briefly reviewing the fundamentals of nucleation theory, we take a few examples to show the significance of concave-corner-mediated nucleation in both self-organized formation of long-range-ordered patterns and in self-assembly of metallic nano wire array. We show that successive concave-corner-mediated nucleation on the growth front is an important mechanism leading to many long-range ordering effects in crystallization. This mechanism can also be applied in fabricating metallic nano wires with specific geometry, including straight metallic wire array with tunable line width<span> and nanowires with periodic structures.</span></p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"62 2","pages":"Pages 252-272"},"PeriodicalIF":5.1,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.013","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2343843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fluid dynamics in crystal growth: The good, the bad, and the ugly","authors":"Jeffrey J. Derby","doi":"10.1016/j.pcrysgrow.2016.04.015","DOIUrl":"https://doi.org/10.1016/j.pcrysgrow.2016.04.015","url":null,"abstract":"<div><p>Fluid dynamics<span> are important in processes that grow large crystals from a liquid phase. This paper presents a primer on fluid mechanics and convection, followed by a discussion of the physics and scaling of flows in such processes. Specific examples of fluid flows in crystal growth systems are presented and classified according to their impact on outcomes, good or bad. Turbulence in crystal growth is discussed within the limited extent of our understanding, which is incomplete, or ugly.</span></p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"62 2","pages":"Pages 286-301"},"PeriodicalIF":5.1,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.015","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2005508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The role of surface and interface structure in crystal growth","authors":"Elias Vlieg","doi":"10.1016/j.pcrysgrow.2016.04.010","DOIUrl":"https://doi.org/10.1016/j.pcrysgrow.2016.04.010","url":null,"abstract":"<div><p>Crystal growth occurs at the interface of a crystal and its growth medium. Due to the abrupt termination at the surface, at the interface the properties of the crystal will typically deviate from the bulk and this can affect the growth behaviour. Also the properties of the growth medium at the interface will typically differ from the bulk. In growth from solution, for example, the liquid will show ordering induced by the crystal surface or have a different composition. Here techniques to study such growth interfaces will be discussed together with examples of the effect that the properties of the interface can have on the growth.</p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"62 2","pages":"Pages 203-211"},"PeriodicalIF":5.1,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.010","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2600877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Solid-state wetting at the nanoscale","authors":"Olivier Pierre-Louis","doi":"10.1016/j.pcrysgrow.2016.04.009","DOIUrl":"https://doi.org/10.1016/j.pcrysgrow.2016.04.009","url":null,"abstract":"<div><p>The aim of this lecture is to provide an overview on solid-state wetting, starting from basic concepts, and introducing the useful mathematical paraphernalia. We review and discuss the similarities and the differences between liquid-state and solid-state wetting. Then, we show how wetting concepts provide tools to understand the morphology and stability of solid-state thin films and nano-islands.</p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"62 2","pages":"Pages 177-202"},"PeriodicalIF":5.1,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2016.04.009","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2324715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Si–Ge–Sn alloys: From growth to applications","authors":"S. Wirths,&nbsp;D. Buca,&nbsp;S. Mantl","doi":"10.1016/j.pcrysgrow.2015.11.001","DOIUrl":"https://doi.org/10.1016/j.pcrysgrow.2015.11.001","url":null,"abstract":"<div><p><span><span><span><span>In this review article, we address key material parameters as well as the fabrication and application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an indirect to a fundamental direct bandgap material will be discussed. The main emphasis, however, is put on the Si–Ge–Sn </span>epitaxy. The low solid solubility of α-Sn in Ge and Si of below 1 at.% along with the large </span>lattice mismatch<span><span> between α-Sn (6.489 Å) and Ge (5.646 Å) or Si (5.431 Å) of about 15% and 20%, respectively, requires non-equilibrium growth processes. The most commonly used approaches, i.e. molecular beam epitaxy (MBE) and </span>chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including </span></span>Germanium<span> hydrides, Silicon hydrides and a variety of Sn compounds like SnD</span></span>₄, SnCl₄ or C₆H₅SnD₃<span>. Special attention is devoted to the growth temperature window and growth rates being the most important growth parameters concerning the substitutional incorporation of Sn atoms into the Ge diamond lattice. Furthermore, the mainly CVD-driven epitaxy of high quality SiGeSn ternary alloys, allowing the decoupling of band engineering and lattice constant<span>, is presented. Since achieving fundamental direct bandgap Sn-based materials strongly depends on the applied strain within the epilayers, ways to control and modify the strain are shown, especially the plastic strain relaxation of (Si)GeSn layers grown on Ge.</span></span></p><p><span>Based on recently achieved improvements of the crystalline quality, novel low power and high mobility GeSn electronic and photonic devices<span> have been developed and are reviewed in this paper. The use of GeSn as optically active gain or channel material with its lower and potentially direct bandgap compared to fundamentally indirect Ge (0.66 eV) and Si (1.12 eV) provides a viable solution to overcome the obstacles in both fields photonics and electronics. Moreover, the epitaxial growth of Sn-based semiconductors using </span></span>CMOS compatible substrates on the road toward a monolithically integrated and efficient group IV light emitter is presented.</p></div>","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"62 1","pages":"Pages 1-39"},"PeriodicalIF":5.1,"publicationDate":"2016-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2015.11.001","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"2600884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"","authors":"H. Hardtdegen","doi":"10.1016/j.pcrysgrow.2015.10.003","DOIUrl":"https://doi.org/10.1016/j.pcrysgrow.2015.10.003","url":null,"abstract":"","PeriodicalId":409,"journal":{"name":"Progress in Crystal Growth and Characterization of Materials","volume":"61 2","pages":"Page 63"},"PeriodicalIF":5.1,"publicationDate":"2015-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.pcrysgrow.2015.10.003","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"3385838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}