Si-Ge-Sn合金:从成长到应用

IF 4.5 2区 材料科学 Q1 CRYSTALLOGRAPHY
S. Wirths, D. Buca, S. Mantl
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引用次数: 180

摘要

本文综述了晶态GeSn二元合金和SiGeSn三元合金的关键材料参数、制备方法和应用。这里,将讨论从间接带隙材料到基本直接带隙材料的转变。然而,主要的重点放在Si-Ge-Sn外延上。α-Sn在1 at以下的Ge和Si中固溶度较低。%以及α-Sn (6.489 Å)与Ge (5.646 Å)或Si (5.431 Å)之间的晶格失配分别约为15%和20%,需要非平衡生长过程。最常用的方法,即分子束外延(MBE)和化学气相沉积(CVD),将从关键工艺参数、结构和光学质量以及使用的前驱体组合(包括锗氢化物、硅氢化物和各种Sn化合物,如SnD4、SnCl4或C6H5SnD3)等方面进行综述。特别注意到生长温度窗和生长速率是影响Sn原子取代入锗金刚石晶格的最重要的生长参数。此外,本文还介绍了高质量SiGeSn三元合金的cvd驱动外延,实现了能带工程和晶格常数的解耦。由于获得基本的直接带隙锡基材料在很大程度上取决于薄膜内施加的应变,因此本文给出了控制和修改应变的方法,特别是在锗上生长的(Si)GeSn层的塑性应变松弛。本文综述了近年来在提高晶体质量的基础上,开发出的新型低功耗、高迁移率的GeSn电子和光子器件。与间接的Ge (0.66 eV)和Si (1.12 eV)相比,使用GeSn作为光学有源增益或通道材料,其具有更低且潜在的直接带隙,为克服光子学和电子学领域的障碍提供了可行的解决方案。此外,本文还介绍了基于CMOS兼容衬底的锡基半导体的外延生长,以实现单片集成和高效的IV族光发射器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Si–Ge–Sn alloys: From growth to applications

In this review article, we address key material parameters as well as the fabrication and application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an indirect to a fundamental direct bandgap material will be discussed. The main emphasis, however, is put on the Si–Ge–Sn epitaxy. The low solid solubility of α-Sn in Ge and Si of below 1 at.% along with the large lattice mismatch between α-Sn (6.489 Å) and Ge (5.646 Å) or Si (5.431 Å) of about 15% and 20%, respectively, requires non-equilibrium growth processes. The most commonly used approaches, i.e. molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydrides and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3. Special attention is devoted to the growth temperature window and growth rates being the most important growth parameters concerning the substitutional incorporation of Sn atoms into the Ge diamond lattice. Furthermore, the mainly CVD-driven epitaxy of high quality SiGeSn ternary alloys, allowing the decoupling of band engineering and lattice constant, is presented. Since achieving fundamental direct bandgap Sn-based materials strongly depends on the applied strain within the epilayers, ways to control and modify the strain are shown, especially the plastic strain relaxation of (Si)GeSn layers grown on Ge.

Based on recently achieved improvements of the crystalline quality, novel low power and high mobility GeSn electronic and photonic devices have been developed and are reviewed in this paper. The use of GeSn as optically active gain or channel material with its lower and potentially direct bandgap compared to fundamentally indirect Ge (0.66 eV) and Si (1.12 eV) provides a viable solution to overcome the obstacles in both fields photonics and electronics. Moreover, the epitaxial growth of Sn-based semiconductors using CMOS compatible substrates on the road toward a monolithically integrated and efficient group IV light emitter is presented.

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来源期刊
Progress in Crystal Growth and Characterization of Materials
Progress in Crystal Growth and Characterization of Materials 工程技术-材料科学:表征与测试
CiteScore
8.80
自引率
2.00%
发文量
10
审稿时长
1 day
期刊介绍: Materials especially crystalline materials provide the foundation of our modern technologically driven world. The domination of materials is achieved through detailed scientific research. Advances in the techniques of growing and assessing ever more perfect crystals of a wide range of materials lie at the roots of much of today''s advanced technology. The evolution and development of crystalline materials involves research by dedicated scientists in academia as well as industry involving a broad field of disciplines including biology, chemistry, physics, material sciences and engineering. Crucially important applications in information technology, photonics, energy storage and harvesting, environmental protection, medicine and food production require a deep understanding of and control of crystal growth. This can involve suitable growth methods and material characterization from the bulk down to the nano-scale.
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