Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545)最新文献_第2页

Thermal characterization of flat silicon heat pipes 平板硅热管的热特性

Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545) Pub Date : 2004-03-09 DOI: 10.1109/STHERM.2004.1291296

A. Lai, C. Gillot, M. Ivanova, Y. Avenas, C. Louis, C. Schaeffer, E. Fournier

引用次数: 15

Thermal behavior of a soldered Cu-Si interface Cu-Si焊接界面的热行为

Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545) Pub Date : 2004-03-09 DOI: 10.1109/STHERM.2004.1291300

D. van Heerden, T. Rude, J. Newson, O. Knio, T. Weihs, D. Gailus

{"title":"Thermal behavior of a soldered Cu-Si interface","authors":"D. van Heerden, T. Rude, J. Newson, O. Knio, T. Weihs, D. Gailus","doi":"10.1109/STHERM.2004.1291300","DOIUrl":"https://doi.org/10.1109/STHERM.2004.1291300","url":null,"abstract":"The thermal behavior of a reactively soldered interface between a Cu heat sink and a Si die is analyzed experimentally. Two aspects are addressed, thermal fatigue of these joints, and the survival of the circuitry on the die during joining. In the reactive soldering process a multilayered reactive NanoFoil/spl trade/ acts as a heat source for melting the solder during joining. The foils consists of hundreds of alternating nanoscale layers of Ni and Al, and supports controlled self-propagating reactions that can be initiated in air and at room temperature. The nanostructured reactive multilayered foils (NanoFoils) are designed to minimize thermal exposure of the components as well as residual stress. To study thermal fatigue of reactively soldered Cu-Si joints three populations of samples are studied, one fabricated using conventional soldering techniques, and two reactively soldered populations fabricated using different solder thicknesses. Both the conventionally and reactively soldered samples consist of a stack composed of two Cu blocks with a Si die soldered between them. The difference between these two types of samples is that for the conventionally soldered joints the heat source used for melting the solder is an oven, while for the reactively soldered joints a nanostructured reactive multilayered foil is used. We show that neither the conventionally soldered samples nor the reactively soldered populations exhibit significant degradation of thermal performance after 1000 cycles between 25 /spl deg/C and 125 /spl deg/C. In addition we show that a commercially available bare-die chip package can be successfully reactively bonded with no degradation in the performance of the chip, but does offer significant reduction in die operating temperature during normal operation.","PeriodicalId":409730,"journal":{"name":"Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545)","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116677858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 15

The effects of geometry and dielectric material on stripline and microstrip internal temperatures 几何形状和介电材料对带状线和微带内部温度的影响

Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545) Pub Date : 2004-03-09 DOI: 10.1109/TCAPT.2005.859745

R. Wilcoxon

引用次数: 8

New technology for thermoelectric cooling 热电冷却新技术

Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545) Pub Date : 2004-03-09 DOI: 10.1109/STHERM.2004.1291295

J. Bass, D. Allen, S. Ghamaty, N. Elsner

引用次数: 15

Comparative analysis of heat sink pressure drop using different methodologies 不同方法对散热器压降的比较分析

Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545) Pub Date : 2004-03-09 DOI: 10.1109/STHERM.2004.1291317

C. K. Loh, D. Chou

引用次数: 10

Camera for thermal imaging of semiconductor devices based on thermoreflectance 基于热反射的半导体器件热成像相机

Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545) Pub Date : 2004-03-09 DOI: 10.1109/STHERM.2004.1291306

J. Christofferson, A. Shakouri

引用次数: 5

Hierarchical thermal modeling for SOI technology SOI技术的分层热建模

Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545) Pub Date : 2004-03-09 DOI: 10.1109/STHERM.2004.1291294

K. Xiu, M. Ketchen

{"title":"Hierarchical thermal modeling for SOI technology","authors":"K. Xiu, M. Ketchen","doi":"10.1109/STHERM.2004.1291294","DOIUrl":"https://doi.org/10.1109/STHERM.2004.1291294","url":null,"abstract":"The thermal environment in VLSI circuits is characterized by the existence of both small and isolated heat sources near the channel region and a vast volume (e.g. substrate) serving as the heat conduction media. The presence of a buried oxide layer in Silicon on Insulator technology introduces an additional thermal barrier between the device and Si substrate. The modeling and simulation of such situations are usually handled with either element-based simulations (e.g. finite element methods, lumped element methods) or direct methods based on integral transform. In practice neither approach can maintain both accuracy and efficiency at the same time. We have developed a new methodology for the simulation of the thermal behavior of high-density integrated circuits at various levels of complexity. It treats the structured thermal conduction media hierarchically and thus is capable of relating thermal behaviors over a wide range of length scales. As a demonstration this methodology is applied to model heat conduction and self heating effects in SOI technology. Compared to the traditional element-based numerical method used to solve the Laplace equation, out method greatly reduces the number of nodes and the computing time while maintaining accuracy.","PeriodicalId":409730,"journal":{"name":"Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126919121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Fan control for a ceiling mount flat TV monitor 风扇控制的天花板安装平板电视显示器

Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545) Pub Date : 2004-03-09 DOI: 10.1109/STHERM.2004.1291316

I. Luiten

引用次数: 6

A system level view of Avionics/Vetronics cooling options for harsh environment two-level maintenance systems 恶劣环境两级维护系统的航空电子/电子冷却选项的系统级视图

Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545) Pub Date : 2004-03-09 DOI: 10.1109/STHERM.2004.1291330

J. Robles, I. Straznicky

引用次数: 2

A procedure to correct the error in the structure function based thermal measuring methods 基于结构功能的热测量方法误差的修正程序

Twentieth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (IEEE Cat. No.04CH37545) Pub Date : 2004-03-09 DOI: 10.1109/STHERM.2004.1291307

M. Rencz, A. Poppe, E. Kollár, S. Ress, V. Székely, B. Courtois

引用次数: 21