基于热反射的半导体器件热成像相机

J. Christofferson, A. Shakouri
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引用次数: 5

摘要

研制了一种适用于微米级有源半导体器件的热成像仪。基于可见光热反射技术,该相机在对顶部金属接触层成像时达到50mK的温度灵敏度和亚微米的空间分辨率。通过使用光电二极管阵列,灵敏度比基于CCD(电荷耦合器件)的系统有所提高。给出了直径为10微米的超小型SiGe微冷却器的热成像结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Camera for thermal imaging of semiconductor devices based on thermoreflectance
A thermal imaging camera suitable for use on micron-sized active semiconductor devices has been developed. Based on a visible light thermoreflectance technique, this camera achieves 50mK temperature sensitivity and sub-micron spatial resolution when imaging the top metal contact layer. By using a photodiode array, sensitivity is improved over what is possible with a CCD (Charge Coupled Device) based system. Thermal imaging results of an ultra small 10 micron diameter SiGe micro-cooler is also presented.
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