Organic Electronics最新文献_第3页

Biocompatible bovine serum albumin dielectric layers for high-performance and neuromorphic n-type organic field-effect transistors 用于高性能神经形态n型有机场效应晶体管的生物相容性牛血清白蛋白介电层

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-01-01 Epub Date: 2025-10-07 DOI: 10.1016/j.orgel.2025.107343

Po-Hsiang Fang , Guan-Xu Chen , Yu-Tong Wu , Shuying Wang , Shan-Jui Hsu , Horng-Long Cheng , Wei-Yang Chou

{"title":"Biocompatible bovine serum albumin dielectric layers for high-performance and neuromorphic n-type organic field-effect transistors","authors":"Po-Hsiang Fang , Guan-Xu Chen , Yu-Tong Wu , Shuying Wang , Shan-Jui Hsu , Horng-Long Cheng , Wei-Yang Chou","doi":"10.1016/j.orgel.2025.107343","DOIUrl":"10.1016/j.orgel.2025.107343","url":null,"abstract":"<div><div>In this study, we systematically explore the role of bovine serum albumin (BSA) as a biocompatible interfacial modification layer in <em>n</em>-type organic field-effect transistors (OFETs) based on N, N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C<sub>13</sub>). By varying BSA concentrations from 4.5 to 100 mg/ml, we demonstrate its significant influence on dielectric thickness, surface energy, and interface trap density. An optimal concentration of 9.0 mg/ml yields a favorable balance between surface smoothness and gate dielectric coupling, resulting in enhanced molecular ordering, reduced subthreshold swing (0.09 V/dec), and improved carrier mobility (0.7 cm<sup>2</sup>/V·s). Photoluminescence, Raman, and X-ray diffraction analyses confirm that BSA promotes π–π stacking and crystallographic alignment conducive to efficient charge transport. Furthermore, synaptic functionalities are realized in devices incorporating 4.5 and 9.0 mg/ml BSA layers, as evidenced by pronounced excitatory postsynaptic current (EPSC) responses. These findings highlight the potential of BSA as a multifunctional dielectric material for high-performance and neuromorphic organic electronic applications.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"148 ","pages":"Article 107343"},"PeriodicalIF":2.6,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145236188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Impact of buffer layer thickness on the performance of metal halide perovskite memristors 缓冲层厚度对金属卤化物钙钛矿记忆电阻器性能的影响

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-01-01 Epub Date: 2025-11-11 DOI: 10.1016/j.orgel.2025.107356

José Carlos Pérez-Martínez, Diego Martín-Martín, Belén Arredondo, Beatriz Romero

{"title":"Impact of buffer layer thickness on the performance of metal halide perovskite memristors","authors":"José Carlos Pérez-Martínez, Diego Martín-Martín, Belén Arredondo, Beatriz Romero","doi":"10.1016/j.orgel.2025.107356","DOIUrl":"10.1016/j.orgel.2025.107356","url":null,"abstract":"<div><div>Perovskite-based memristors have emerged as promising devices for information storage and processing due to their resistive switching properties. In this study, nonvolatile resistive switching memory devices based on metal halide perovskite with structure FTO/methylammonium lead iodide (MAPbI<sub>3</sub>)/polymethyl methacrylate (PMMA)/Ag are presented. The influence of buffer layer thickness (PMMA) variations at 30 nm, 50 nm, and 70 nm on device performance is evaluated. Experimental results show that key device parameters such as SET voltage, ON/OFF ratio, endurance and retention time are significantly affected by changes in the buffer layer thickness. Our findings show that an optimum thickness of 50 nm improves the stability and performance of the device, with ultra-high ON/OFF ratios (10<sup>6</sup>), record endurances (>3·10<sup>4</sup> cycles) and a record retention time (>5·10<sup>5</sup> s). AC characterization has also been carried out to gain a deeper understanding of the physical mechanisms governing the device. Finally, numerical simulations are carried out to understand the role of the electric field in the formation and rupture of conductive filaments within both the perovskite and buffer layers in devices with different buffer layer thicknesses.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"148 ","pages":"Article 107356"},"PeriodicalIF":2.6,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145526025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Reproducible high-efficiency and color stable single-emitting-layer cold WOLEDs based on inhibition of energy transfer and efficient exciton harvesting 基于抑制能量传递和高效激子收集的可重复、高效、色稳定的单发射层冷WOLEDs

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-01-01 Epub Date: 2025-11-03 DOI: 10.1016/j.orgel.2025.107355

Jinming Li , Yangkai Zhao , Linyi Song , Yujian Liu , Xuankang Zhang , Baoxiu Mi , Qi Wei , Quli Fan , Yan Qian

{"title":"Reproducible high-efficiency and color stable single-emitting-layer cold WOLEDs based on inhibition of energy transfer and efficient exciton harvesting","authors":"Jinming Li , Yangkai Zhao , Linyi Song , Yujian Liu , Xuankang Zhang , Baoxiu Mi , Qi Wei , Quli Fan , Yan Qian","doi":"10.1016/j.orgel.2025.107355","DOIUrl":"10.1016/j.orgel.2025.107355","url":null,"abstract":"<div><div>Traditional white organic light-emitting diodes (WOLEDs) often rely on mechanism of incomplete energy transfer, which generally necessitate extremely low doping concentrations for low-energy emitters. This poses significant challenges in device fabrication reproducibility and color coordinate consistency. In this work, we developed a hot exciton yellow-emitting excited state intramolecular proton transfer (ESIPT) fluorophore, T4AC, featuring a large Stokes shift. The material achieves a high exciton utilization efficiency of up to 88.8 %, via high-energy-level reverse intersystem crossing (hRISC). By co-doping T4AC with a thermally activated delayed fluorescence (TADF) blue emitter, DMAc-MPM, we realized highly efficient and reproducible bluish WOLEDs employing a single emitting layer with complementary-color emissions. Minimal spectral overlap effectively suppressed energy transfer, thus ensuring independent triplet harvesting via hot exciton mechanism in T4AC and the TADF process in DMAc-MPM, respectively. The resulting device exhibits color stable and high-efficiency cold white emission, achieving maximum external quantum efficiency (EQE) of 11.50 % and current efficiency (CE) of 27.74 cd A<sup>−1</sup>. More importantly, these bluish WOLEDs demonstrated excellent reproducibility across multiple batches, with small EQE variations within 11.15 % ± 0.62 % and CIE coordinate fluctuations confined to a narrow range of (0.181 ± 0.004, 0.351 ± 0.030). This study presents a viable strategy for the development of simple-structured, highly efficient, and reproducibly fabricated cold WOLEDs.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"148 ","pages":"Article 107355"},"PeriodicalIF":2.6,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145463560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Preparation of TiO2 film using a novel high-bias pulsed FCVA for flexible OLED film encapsulation 柔性OLED薄膜封装用新型高偏置脉冲FCVA制备TiO2薄膜

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-01-01 Epub Date: 2025-11-10 DOI: 10.1016/j.orgel.2025.107357

Qian Li , Zeyu Yin , Sen Chen , Qingyan Hou , Pan Pang , Yifan Zhang , Shouzheng Jiao , Lin Chen

{"title":"Preparation of TiO2 film using a novel high-bias pulsed FCVA for flexible OLED film encapsulation","authors":"Qian Li , Zeyu Yin , Sen Chen , Qingyan Hou , Pan Pang , Yifan Zhang , Shouzheng Jiao , Lin Chen","doi":"10.1016/j.orgel.2025.107357","DOIUrl":"10.1016/j.orgel.2025.107357","url":null,"abstract":"<div><div>Encapsulation is crucial for protecting organic light-emitting diodes (OLEDs) from the effects of water vapor and oxygen in the air, and extending their lifespan. This study reports the use of TiO<sub>2</sub> films grown based on filtering cathode vacuum arc (FCVA) technology for flexible OLED device packaging. To ensure the bending service life of flexible OLED devices, high pulse bias is applied, and low stress, high density TiO<sub>2</sub> thin films are prepared at room temperature through a deposition mode of short-term high-energy ion bombardment and long-term relaxation. The results showed that the stress of the film significantly decreased to −89 MPa after applying a bias voltage. Under the conditions of 85 °C and 85 % relative humidity, the water vapor transmission rate (WVTR) of TiO<sub>2</sub>/PEN samples prepared under 7 kV negative bias was 6.23 × 10<sup>−3</sup> g/m<sup>2</sup>/day after bending experiment, which was two order of magnitude lower than the samples prepared without negative bias. In addition, brightness tests on packaged devices have shown that OLED devices packaged with TiO<sub>2</sub> films have an extended lifespan of approximately 0.8 times.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"148 ","pages":"Article 107357"},"PeriodicalIF":2.6,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145526024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Solution-processable pyridine-flanked DPP copolymers for n-type organic field-effect transistors 用于n型有机场效应晶体管的可溶液加工吡啶侧链DPP共聚物

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-01-01 Epub Date: 2025-10-29 DOI: 10.1016/j.orgel.2025.107353

Yejin Ahn , Dong Uk Lee , Yu Rim Kang , Hyojin Kye , Bong-Gi Kim , YeongKwon Kang

{"title":"Solution-processable pyridine-flanked DPP copolymers for n-type organic field-effect transistors","authors":"Yejin Ahn , Dong Uk Lee , Yu Rim Kang , Hyojin Kye , Bong-Gi Kim , YeongKwon Kang","doi":"10.1016/j.orgel.2025.107353","DOIUrl":"10.1016/j.orgel.2025.107353","url":null,"abstract":"<div><div>Organic field-effect transistors (OFETs) have been extensively studied, yet achieving reproducible n-type transport remains a persistent challenge. Here, we report two pyridine-flanked diketopyrrolopyrrole (DPP) copolymers, 5-PDppPy-S and 5-PDppPy-Se, designed to probe the influence of chalcogen substitution on electron transport. Both polymers exhibit good solubility in common organic solvents and high thermal stability with 5 % weight loss above 390 °C. Thin-film devices with a bottom-gate, top-contact architecture showed clear n-channel operation, with electron mobilities of 1.0 × 10<sup>−3</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> for 5-PDppPy-S and 1.7 × 10<sup>−3</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> for 5-PDppPy-Se. A brief thermal annealing step at 200 °C for 10 min further improved charge transport, yielding mobilities of 1.7 × 10<sup>−3</sup> and 3.1 × 10<sup>−3</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, respectively. Atomic force microscopy (AFM) revealed increased surface roughness and domain growth upon annealing, consistent with enhanced molecular ordering. These findings establish a direct comparison of sulfur and selenium substitution in pyridine-flanked DPP polymers and highlight the role of simple post-processing in achieving stable n-type transport, offering insights for the molecular design of solution-processable OFET materials.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"148 ","pages":"Article 107353"},"PeriodicalIF":2.6,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145413611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Highly efficient white organic light-emitting diodes with low efficiency roll-off based on novel exciplex host 基于新型激复体的低滚降高效白光有机发光二极管

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-01-01 Epub Date: 2025-10-22 DOI: 10.1016/j.orgel.2025.107352

Fankang Kong , Qingxiang Wang , Yongan Zhang , Jun Sun , Jintao Wang , Liping Yang , Ren Sheng , Ping Chen

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Machine learning-driven prediction of energy and band gap in FAPbI3 perovskite using diverse structural descriptors 使用不同结构描述符的FAPbI3钙钛矿能量和带隙的机器学习驱动预测

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-01-01 Epub Date: 2025-11-21 DOI: 10.1016/j.orgel.2025.107358

Xiaolu Chen , Yidong Zhao , Zihe Cao , Youqian Sun , Wenming Zhang , Yi Yang , Bing Zhang , Ji Liu , Zhenxi Zhang , Qiang Lu

{"title":"Machine learning-driven prediction of energy and band gap in FAPbI3 perovskite using diverse structural descriptors","authors":"Xiaolu Chen , Yidong Zhao , Zihe Cao , Youqian Sun , Wenming Zhang , Yi Yang , Bing Zhang , Ji Liu , Zhenxi Zhang , Qiang Lu","doi":"10.1016/j.orgel.2025.107358","DOIUrl":"10.1016/j.orgel.2025.107358","url":null,"abstract":"<div><div>Perovskite materials exhibit significant potential in optoelectronic applications, with system energy and band gap serving as critical metrics for evaluating material stability and optical characteristics. To accelerate the development of high-performance perovskite materials, this study establishes an efficient structure-property prediction framework through machine learning approaches. Artificial neural network (ANN) potential models and random forest (RF) models were established using Gaussian-type structure descriptors (GTSD) and power-type structural descriptors (PTSD) as feature inputs, based on a comprehensive dataset of 1000 FAPbI<sub>3</sub> configurations with corresponding system energies and band gap values. The RF-based feature selection method was subsequently employed to identify key structural descriptors governing the energy landscape and electronic properties of FAPbI<sub>3</sub>. Furthermore, the predictive robustness of neural networks across datasets with varying structural perturbations was systematically investigated, revealing critical insights into model generalization capabilities. This computational framework demonstrates high-precision prediction of structure-property relationships while providing mechanistic interpretation of dominant structural factors, thereby offering valuable guidance for rational design of perovskite materials.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"148 ","pages":"Article 107358"},"PeriodicalIF":2.6,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145620210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improving performance of quantum dot light-emitting diodes through PMA-doped PEDOT:PSS hole injection layer pma掺杂PEDOT:PSS空穴注入层改善量子点发光二极管性能

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-01-01 Epub Date: 2025-10-25 DOI: 10.1016/j.orgel.2025.107350

Eunyong Seo , Jeong Ha Hwang , Sinhui Min , Juwan Lee , Heeeun Kang , Seog Geun Kang , Donggu Lee

{"title":"Improving performance of quantum dot light-emitting diodes through PMA-doped PEDOT:PSS hole injection layer","authors":"Eunyong Seo , Jeong Ha Hwang , Sinhui Min , Juwan Lee , Heeeun Kang , Seog Geun Kang , Donggu Lee","doi":"10.1016/j.orgel.2025.107350","DOIUrl":"10.1016/j.orgel.2025.107350","url":null,"abstract":"<div><div>Colloidal quantum dot-based light-emitting diodes (QLEDs) have attracted significant attention owing to their facile solution processability and excellent optical properties, making them promising candidates for developing next-generation display technologies. However, their practical application remains limited due to inefficient hole injection, which remains a significant challenge in achieving high stability and commercial viability for solution-processed QLEDs. This work introduces a hybrid hole injection layer (HIL) to realize efficient solution-processed QLEDs. The designed HIL consists of a conductive polymer poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), doped with inorganic additive phosphomolybdic acid. In this design, the anode-HIL interface, engineered by the hybrid HIL, enhanced the hole injections, leading to improved device performance. The optimized hybrid-HIL-based QLEDs displayed a maximum external quantum efficiency of 9.84 % and a power efficiency of 11.55 lm/W, exhibiting a significant improvement compared to conventional PEDOT:PSS-based devices. These results confirmed that the solution-processable hybrid HIL provides a promising alternative for realizing high-performance, solution-processed QLEDs.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"148 ","pages":"Article 107350"},"PeriodicalIF":2.6,"publicationDate":"2026-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145413613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magneto-tunability of photocurrent in p-Si (100)/NiFe2O4/SL/CuPc/Al [where, spacer layer (SL)=P3HT and rGO] heterojunction devices at room temperature: Role of organic interface in Opto-spintronics 室温下p-Si (100)/NiFe2O4/SL/CuPc/Al[其中，间隔层(SL)=P3HT和rGO]异质结器件中光电流的磁可调性：有机界面在光自旋电子学中的作用

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2025-12-01 Epub Date: 2025-09-12 DOI: 10.1016/j.orgel.2025.107338

Nitish Ghosh , Md Minhaj Ali , P. Dey

{"title":"Magneto-tunability of photocurrent in p-Si (100)/NiFe2O4/SL/CuPc/Al [where, spacer layer (SL)=P3HT and rGO] heterojunction devices at room temperature: Role of organic interface in Opto-spintronics","authors":"Nitish Ghosh , Md Minhaj Ali , P. Dey","doi":"10.1016/j.orgel.2025.107338","DOIUrl":"10.1016/j.orgel.2025.107338","url":null,"abstract":"<div><div>Investigation of carrier transportation at ferromagnetic (FM)/organic semiconductor (OSC) interface has great research potential for the formation of spin valve (SV) device. Magneto-optical coupling effect on carriers has been investigated in FM/OSC based two heterostructures Silicon (Si)/Nickel ferrite (NiFe<sub>2</sub>O<sub>4</sub>)/poly (3-hexylthiophene) (P3HT)/Copper Phthalocyanine (CuPc)/Aluminium (Al) [P3HT based i.e., S1 heterostructure] and Si/NiFe<sub>2</sub>O<sub>4</sub> (NFO)/reduced graphene oxide (rGO)/CuPc/Al [rGO based i.e, S2 heterostructure]. Direct spin injection and carrier transport mechanism are found to be prominent at the NFO/rGO interface due to very close position of conduction bands of NFO and rGO to the Fermi energy level, which results larger device current (1000 times larger than S1) in S2 sample. The S1 heterostructure exhibits a drastic increase in negative magnetoresistance (MR)at low magnetic field (H<sub>ext</sub>) regime due to enhancement of both de-pining spin from weak potential well and spin dependent tunneling of carriers at NFO/P3HT interface. However, at high H<sub>ext</sub> organic magnetoresistance (OMAR) effect of P3HT polymer results overall decrease of negative MR of S1 sample. In contrast, S2 device shows monotonic increase in negative MR. A significant photoresponse under 660 nm red laser has obtained in both the heterostructures. At high optical power, switching of MR from negative to positive value has been observed in both the devices, which attributes substantial scattering and decoherence of photogenerated carriers. Another side, on switching of H<sub>ext</sub> a drastic decrease and a monotonic decrease of photocurrent has been observed in S1 and S2 heterostructures, respectively, which comes from the modification of spin transportation at the interface.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"147 ","pages":"Article 107338"},"PeriodicalIF":2.6,"publicationDate":"2025-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145060876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bis-adducted fullerene derivatives as third-component materials enabling efficient ternary all-small-molecule organic solar cells with over 16 % efficiency 双加合富勒烯衍生物作为第三组分材料，使高效三元全小分子有机太阳能电池的效率超过16%

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2025-12-01 Epub Date: 2025-09-10 DOI: 10.1016/j.orgel.2025.107330

Xiaoguo Chen , zhiyong liu

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