{"title":"Biocompatible bovine serum albumin dielectric layers for high-performance and neuromorphic n-type organic field-effect transistors","authors":"Po-Hsiang Fang , Guan-Xu Chen , Yu-Tong Wu , Shuying Wang , Shan-Jui Hsu , Horng-Long Cheng , Wei-Yang Chou","doi":"10.1016/j.orgel.2025.107343","DOIUrl":"10.1016/j.orgel.2025.107343","url":null,"abstract":"<div><div>In this study, we systematically explore the role of bovine serum albumin (BSA) as a biocompatible interfacial modification layer in <em>n</em>-type organic field-effect transistors (OFETs) based on N, N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C<sub>13</sub>). By varying BSA concentrations from 4.5 to 100 mg/ml, we demonstrate its significant influence on dielectric thickness, surface energy, and interface trap density. An optimal concentration of 9.0 mg/ml yields a favorable balance between surface smoothness and gate dielectric coupling, resulting in enhanced molecular ordering, reduced subthreshold swing (0.09 V/dec), and improved carrier mobility (0.7 cm<sup>2</sup>/V·s). Photoluminescence, Raman, and X-ray diffraction analyses confirm that BSA promotes π–π stacking and crystallographic alignment conducive to efficient charge transport. Furthermore, synaptic functionalities are realized in devices incorporating 4.5 and 9.0 mg/ml BSA layers, as evidenced by pronounced excitatory postsynaptic current (EPSC) responses. These findings highlight the potential of BSA as a multifunctional dielectric material for high-performance and neuromorphic organic electronic applications.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"148 ","pages":"Article 107343"},"PeriodicalIF":2.6,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145236188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dogyeong Kim , Jinwook Jung , Yoohan Ma , Gyuwan Hwang , Jae-Seung Roh , Jongbok Kim , Dongwook Ko
{"title":"Interfacial defect mitigation in bilayer organic photovoltaics via low-temperature annealing for enhanced indoor light performance","authors":"Dogyeong Kim , Jinwook Jung , Yoohan Ma , Gyuwan Hwang , Jae-Seung Roh , Jongbok Kim , Dongwook Ko","doi":"10.1016/j.orgel.2025.107342","DOIUrl":"10.1016/j.orgel.2025.107342","url":null,"abstract":"<div><div>Organic photovoltaics (OPVs) are promising for indoor energy harvesting due to their lightweight, and tunable absorption. However, bulk heterojunction (BHJ) structures suffer from severe recombination losses under low-intensity illumination, limiting device efficiency. In contrast, planar bilayer OPVs mitigate these losses by providing well-defined donor–acceptor interfaces and direct charge transport pathways. Here, bilayer OPVs were fabricated using a water-assisted lamination method, enabling the transfer of the donor polymer PTB7 onto a PC71BM acceptor layer without intermixing. To mitigate interfacial trap states caused by oxygen adsorption, we applied low-temperature annealing at 40 °C. Bilayer OPVs annealed for 1 min achieved the highest power conversion efficiency of 2.36 % under 1000 lux compact fluorescent lamp (CFL) illumination. Angle-resolved X-ray photoelectron spectroscopy confirmed the removal of surface-bound oxygen, while photoluminescence and contact angle measurements revealed suppressed trap states and preserved π–conjugation. Optical absorption and XPS depth-profile analyses further verified that the bilayer morphology remained intact without donor–acceptor interdiffusion. In addition, light-intensity-dependent open-circuit voltage analysis indicated reduced trap-assisted recombination in optimally annealed devices. These findings demonstrate that low-temperature annealing is an effective strategy to enhance the efficiency of bilayer OPVs by eliminating interfacial adsorbed traps while maintaining structural stability under indoor illumination.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"147 ","pages":"Article 107342"},"PeriodicalIF":2.6,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145217514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Interface-Engineered polymer nanocomposite RRAM with enhanced switching reliability and performance","authors":"Yu-Kyung Kim , Min-Guen Kim , Jea-Young Choi","doi":"10.1016/j.orgel.2025.107340","DOIUrl":"10.1016/j.orgel.2025.107340","url":null,"abstract":"<div><div>In this study, non-volatile resistive random access memory (RRAM) devices were fabricated using polymer nanocomposites (NCs) consisting of polyvinyl alcohol (PVA) and copper oxide (CuO) nanoparticles (NPs). The fabricated ITO/CuO:PVA/Al devices demonstrated bipolar resistive switching (RS) behavior, primarily driven by the charge trapping/de-trapping dynamics associated with the CuO NPs. However, excessive defect densities within the NC layer limited device reliability and switching performance. To address this issue, a hydroquinone-modified PEDOT:PSS (HQ-PEDOT:PSS) interfacial buffer layer was introduced to enhance interfacial properties. Electrical impedance spectroscopy (EIS) analysis confirmed that HQ-PEDOT:PSS effectively suppressed trap-assisted charge recombination and improved charge transfer efficiency at the interface. As a result, HQ-PEDOT:PSS-incorporated devices (HQ-NC-RRAM) demonstrated a significantly enhanced ON/OFF ratio of ∼10<sup>4</sup> and a remarkably low data dispersion variance (VDD ≈ 0.01) during endurance measurements. Compared to devices with conventional pristine-PEDOT:PSS or no buffer layer, the HQ-NC-RRAM demonstrated notably improved switching performance and device reliability. These findings highlight the effectiveness of HQ-PEDOT:PSS in interface engineering for high-performance NC-RRAMs.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"147 ","pages":"Article 107340"},"PeriodicalIF":2.6,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145119329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lingyu Huo , Muci Li , Hao Sun , Xiaocui Wang , Bingyu Wang , Xiaowen Zhang
{"title":"Solution-processed NiO tailoring hole injection and enhancing photoluminescence in light-emitting diodes","authors":"Lingyu Huo , Muci Li , Hao Sun , Xiaocui Wang , Bingyu Wang , Xiaowen Zhang","doi":"10.1016/j.orgel.2025.107341","DOIUrl":"10.1016/j.orgel.2025.107341","url":null,"abstract":"<div><div>Solution-processed NiO mediating light-emitting diodes (LEDs) performance have been demonstrated. Using NiO-doped poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) tailoring hole injection, fantastic UV organic LEDs with maximum external quantum efficiency of 4.24 %, radiance of 3.9 mW/cm<sup>2</sup>, and 375 nm short-wavelength emission are demonstrated. Using hybrid NiO-quantum dots/carbon dots dispersed in poly(methyl methacrylate) as composite fluorescence film, the 365-nm (and 395-nm) excited photoluminescent LEDs show high luminance of 22014 (and 23937) cd/m<sup>2</sup> at 100 mA (and 110 mA), power efficiency of 13.86 (and 13.00) lm/W, and yellow-green emission with spectra peak of about 555 nm and wide full width at half maximum of about 140 nm. Atomic force microscope, transmission electron microscope, X-ray/ultraviolet photoelectron spectroscopy, current-voltage, photoluminescence, impedance spectroscopy, and conductivity measurements confirm that NiO-doped poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) promotes hole injection in organic LEDs, NiO incorporation enhances photoluminescence of carbon dots, and accordingly contributing to superior device performance. Our experiments provide alternative methods for constructing fascinating LEDs and boosting NiO applications.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"147 ","pages":"Article 107341"},"PeriodicalIF":2.6,"publicationDate":"2025-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145097073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wang Ni , Ruochen Wang , Zhaochen Lv , Miaomiao Li
{"title":"Improved performance of small molecule based organic photovoltaic cells enabled by fine-tuning side chains on terminal units","authors":"Wang Ni , Ruochen Wang , Zhaochen Lv , Miaomiao Li","doi":"10.1016/j.orgel.2025.107339","DOIUrl":"10.1016/j.orgel.2025.107339","url":null,"abstract":"<div><div>Achieving proper film morphology and microstructures via molecular engineering remains a long-standing challenge for small-molecule-based organic photovoltaics. Herein, we designed and synthesized a small molecule donor, namely DAR3TBDT with allyl substituted rhodanine as terminal units. Compared to molecule DR3TBDT with ethyl groups on the terminus, DAR3TBDT in film showed similar optical bandgap and frontier molecular orbital energy levels, but more ordered molecular packing. Moreover, DAR3TBDT:PC<sub>71</sub>BM blend film exhibited better morphology with more defined phase separation in comparison to DR3TBDT:PC<sub>71</sub>BM counterpart. Owing to efficient exciton dissociation, charge transport and charge collection, the photovoltaic devices based on DAR3TBDT:PC<sub>71</sub>BM achieved a power conversion efficiency (PCE) of 9.05 % under one sun (AM 1.5G, 100 mW cm<sup>−2</sup>), outperforming the DR3TBDT:PC<sub>71</sub>BM-based counterparts (7.94 %). Furthermore, the DAR3TBDT:PC<sub>71</sub>BM-based devices are applied as the laser power converter under 532 nm laser irradiation, and achieved a high PCE of 23.11 %. This study opens a promising avenue to develop high-performance photovoltaic materials from the view of side chain engineering.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"147 ","pages":"Article 107339"},"PeriodicalIF":2.6,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145097072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Magneto-tunability of photocurrent in p-Si (100)/NiFe2O4/SL/CuPc/Al [where, spacer layer (SL)=P3HT and rGO] heterojunction devices at room temperature: Role of organic interface in Opto-spintronics","authors":"Nitish Ghosh , Md Minhaj Ali , P. Dey","doi":"10.1016/j.orgel.2025.107338","DOIUrl":"10.1016/j.orgel.2025.107338","url":null,"abstract":"<div><div>Investigation of carrier transportation at ferromagnetic (FM)/organic semiconductor (OSC) interface has great research potential for the formation of spin valve (SV) device. Magneto-optical coupling effect on carriers has been investigated in FM/OSC based two heterostructures Silicon (Si)/Nickel ferrite (NiFe<sub>2</sub>O<sub>4</sub>)/poly (3-hexylthiophene) (P3HT)/Copper Phthalocyanine (CuPc)/Aluminium (Al) [P3HT based i.e., S1 heterostructure] and Si/NiFe<sub>2</sub>O<sub>4</sub> (NFO)/reduced graphene oxide (rGO)/CuPc/Al [rGO based i.e, S2 heterostructure]. Direct spin injection and carrier transport mechanism are found to be prominent at the NFO/rGO interface due to very close position of conduction bands of NFO and rGO to the Fermi energy level, which results larger device current (1000 times larger than S1) in S2 sample. The S1 heterostructure exhibits a drastic increase in negative magnetoresistance (MR)at low magnetic field (H<sub>ext</sub>) regime due to enhancement of both de-pining spin from weak potential well and spin dependent tunneling of carriers at NFO/P3HT interface. However, at high H<sub>ext</sub> organic magnetoresistance (OMAR) effect of P3HT polymer results overall decrease of negative MR of S1 sample. In contrast, S2 device shows monotonic increase in negative MR. A significant photoresponse under 660 nm red laser has obtained in both the heterostructures. At high optical power, switching of MR from negative to positive value has been observed in both the devices, which attributes substantial scattering and decoherence of photogenerated carriers. Another side, on switching of H<sub>ext</sub> a drastic decrease and a monotonic decrease of photocurrent has been observed in S1 and S2 heterostructures, respectively, which comes from the modification of spin transportation at the interface.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"147 ","pages":"Article 107338"},"PeriodicalIF":2.6,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145060876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Bis-adducted fullerene derivatives as third-component materials enabling efficient ternary all-small-molecule organic solar cells with over 16 % efficiency","authors":"Xiaoguo Chen , zhiyong liu","doi":"10.1016/j.orgel.2025.107330","DOIUrl":"10.1016/j.orgel.2025.107330","url":null,"abstract":"<div><div>All-small-molecule ternary organic photovoltaics (SMPVs) are composed of BTR-Cl as a donor, Y6 as an acceptor and NC<sub>70</sub>BA as a third-component material. When the BTR-Cl:Y6:NC<sub>70</sub>BA ratio was 1.6:1:0.15, the optimized ternary SMPVs achieved the highest PCE of 16.35 %, with a <em>J</em><sub>SC</sub> of 27.01 mA cm<sup>−2</sup>, a <em>V</em><sub>OC</sub> of 0.850 V and an FF of 71.2 %. Owing to the hollow spherical structure of NC<sub>70</sub>BA, better connections could be achieved between the donor and acceptor molecules. Moreover, the medium LUMO energy levels between BTR-Cl and Y6 are beneficial for forming a cascade of LUMO energy levels. In addition, NC<sub>70</sub>BA adjusts the molecular arrangement and enhances the crystallinity of the photoactive layer. Thus, NC<sub>70</sub>BA as a third-component material can support enhanced <em>J</em><sub>SC</sub>. Collectively, these findings highlight a promising pathway for improving SMPVs performance through the use of NC<sub>70</sub>BA as a third-component material.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"147 ","pages":"Article 107330"},"PeriodicalIF":2.6,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145046998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Biodegradable TMCM-CdCl3/polylactic acid composites for piezoelectric energy harvesting","authors":"Meng Guo, Guan-Zhi Wang, Yunchao Miao, Hai-Run Yang, Chen Zhao, Zhi-Gang Li","doi":"10.1016/j.orgel.2025.107331","DOIUrl":"10.1016/j.orgel.2025.107331","url":null,"abstract":"<div><div>Hybrid organic-inorganic perovskites (HOIPs) have attracted extensive attention due to their unique piezoelectric properties, mild synthesis conditions, and structural flexibility. However, the intrinsic rigidity and poor biodegradability of HOIPs limit their applications in flexible wearable devices. In this work, we integrate HOIPs (TMCM-CdCl<sub>3</sub>) (TMCM, trimethylchloromethyl ammonium; Cd, Cadmium; Cl, chloride) with biodegradable polylactic acid (PLA) to fabricate flexible composite films that simultaneously maintain excellent piezoelectric properties, provide the mechanical flexibility needed for wearable devices, and overcome the environmental limitations of conventional non-degradable polymers. The composite film exhibits optimal properties, achieving a short-circuit current (<em>I</em><sub>SC</sub>) of 1.74 μA, an open-circuit voltage (<em>V</em><sub>OC</sub>) of 4.35 V, and a peak power density of 1.47 × 10<sup>−6</sup> W/cm<sup>2</sup> under a 5 N force. Furthermore, the composite film exhibits robust mechanical flexibility and cyclic stability, maintaining stability over 10,000 bending cycles, which positions it as a promising candidate for flexible wearable devices with broad application prospects.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"147 ","pages":"Article 107331"},"PeriodicalIF":2.6,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145020849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Walid Boukhili , Kunfang Chen , Xiang Wan , Chee Leong Tan , Huabin Sun , Zhihao Yu , Swelm Wageh , Yong Xu , Dongyoon Khim
{"title":"Organic–inorganic hybrid injection layers for efficient charge injection in organic transistors","authors":"Walid Boukhili , Kunfang Chen , Xiang Wan , Chee Leong Tan , Huabin Sun , Zhihao Yu , Swelm Wageh , Yong Xu , Dongyoon Khim","doi":"10.1016/j.orgel.2025.107332","DOIUrl":"10.1016/j.orgel.2025.107332","url":null,"abstract":"<div><div>Exploring suitable injection layer architectures, whether simple or hybrid organic–inorganic bilayers, that ensure efficient charge injection, favorable interfacial properties, and low-cost fabrication is of great technological significance for advancing inorganic and organic electronic devices. In this study, a series of tetracene-based organic thin-film transistors (tetracene-OTFTs) were fabricated, characterized, and systematically investigated, including reference devices with bare Au source/drain (S/D) electrodes and devices incorporating injection layers such as MoO<sub>3</sub>, pentacene (P5), and a hybrid P5/MoO<sub>3</sub> bilayer beneath the Au S/D electrodes. Among all configurations, devices employing the P5/MoO<sub>3</sub> injection bilayer demonstrated the highest performance, achieving a hole mobility of 2.5 × 10<sup>−2</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, a reduced threshold voltage of −0.65 V, near-zero onset voltage, a high on/off current ratio of 5.6 × 10<sup>4</sup>, a low contact resistance of 1.2 × 10<sup>3</sup> kΩ, and reduced trap densities. The enhanced electrical performance of devices with the hybrid P5/MoO<sub>3</sub> injection bilayer is attributed to its synergistic function: MoO<sub>3</sub> enables favorable energy level alignment for efficient hole injection, while the ultrathin P5 layer acts as a diffusion barrier and forms a coherent organic/organic interface that enhances morphological compatibility with the tetracene active layer. These findings highlight the significant potential of hybrid injection bilayer architectures to simultaneously optimize charge injection, interfacial energetics, and device performance, thereby paving the way toward next-generation high-performance hybrid electronic devices.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"147 ","pages":"Article 107332"},"PeriodicalIF":2.6,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145005037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High-efficiency quantum dot light-emitting devices with dual hole injection layers","authors":"Zhoujian Fan , Kuibao Yu , Hailong Hu","doi":"10.1016/j.orgel.2025.107329","DOIUrl":"10.1016/j.orgel.2025.107329","url":null,"abstract":"<div><div>Quantum dot light-emitting devices (QLEDs) exhibit unique advantages for high-resolution display applications. However, as pixel size decreases, challenges including insufficient hole injection and leakage current become increasingly pronounced, resulting in significant degradation in device performance. Herein, dual hole injection layers are constructed by self-assembly of an organic small molecular layer on conventional PEDOT:PSS to smooth the potential barrier, thus achieving more balanced carrier injection. An ultrafine inter-pixel isolation structure is designed as a charge blocking layer surrounding the photolithograpic pixels, with the purpose of effectively mitigating leakage current in the non-emitting region. The high-resolution devices show a high external quantum efficiency (EQE) of 19.6 % and a peak power efficiency (PE) of 20.63 lm/W, both of which significantly exceed the performance of the control device (EQE = 14.6 %, PE = 10.54 lm/W).</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"146 ","pages":"Article 107329"},"PeriodicalIF":2.6,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144920263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}