Organic Electronics最新文献

Enhancing charge transport and device stability of MAPbI3 perovskite solar cells by hole-transport bilayer 空穴-输运双分子层增强MAPbI3钙钛矿太阳能电池的电荷输运和器件稳定性

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-04-01 Epub Date: 2026-02-02 DOI: 10.1016/j.orgel.2026.107391

Shanshan Du , Niqian Du , Yaru Du , Xiangda Zeng , Xiaobo Zhang , Kaikai Liu , Zhiyong Liu

{"title":"Enhancing charge transport and device stability of MAPbI3 perovskite solar cells by hole-transport bilayer","authors":"Shanshan Du , Niqian Du , Yaru Du , Xiangda Zeng , Xiaobo Zhang , Kaikai Liu , Zhiyong Liu","doi":"10.1016/j.orgel.2026.107391","DOIUrl":"10.1016/j.orgel.2026.107391","url":null,"abstract":"<div><div>Perovskite solar cells (PSCs) have attracted widespread attention and have gained rapid progress. The poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is widely used as a hole transport layer (HTL) in inverted architectures. However, the devices based on PEDOT:PSS suffer from low efficiency and poor stability, primarily due to energy-level misalignment and an unfavorable HTL/perovskite interface. Herein, a poly (triarylamine) (PTAA) layer is deposited on top of the PEDOT:PSS film to construct a PEDOT:PSS/PTAA hole-transport bilayer, thereby improving the interface between PEDOT:PSS and the perovskite and boosting the performance of PSCs. The introduction of the PTAA layer mitigates the hydrophilicity of PEDOT:PSS, realizes energy-band alignment, and accelerates carrier extraction. Consequently, the power-conversion efficiency (PCE) of the PSCs increased from 21.95% to 22.81%. Unencapsulated devices retain >70% of initial performance after 30 days at a humidity of ∼20% and room temperature, substantially outperforming the device with a PEDOT:PSS layer (∼40%). This work provides an easily accessible bilayer HTL strategy that boosts both efficiency and stability of PEDOT:PSS-based inverted PSCs.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"151 ","pages":"Article 107391"},"PeriodicalIF":2.6,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146184729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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TADF and HLCT emission switching by changing the intramolecular charge transfer properties through modification of substituent orientation 通过改变取代基取向改变分子内电荷转移性质来实现TADF和HLCT的发射切换

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-04-01 Epub Date: 2026-01-02 DOI: 10.1016/j.orgel.2025.107371

Guo Honghui , Baoming Hou , Huimin Yang , Xiaomin Yin , Yuang Yang , Yuyu Pan , Li Fan , Bing Yang

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The field-effect mobility of fluorinated quinoxaline-based simple polymers with different electron-donating moiety 具有不同给电子基团的氟化喹诺啉基简单聚合物的场效应迁移率

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-03-01 Epub Date: 2026-01-13 DOI: 10.1016/j.orgel.2026.107382

Liping Si , Haoyuan Yin , Cheng Liu , Xuncheng Liu

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Development of triazine-based n-type hosts incorporating naphthalene or quinoline for highly efficient thermally activated delayed fluorescence organic light-emitting diodes 含萘或喹啉的三嗪基n型宿主高效热激活延迟荧光有机发光二极管的研制

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-03-01 Epub Date: 2026-01-08 DOI: 10.1016/j.orgel.2026.107380

Ho-Yeol Park , Jin Soo Yoo , Thippan Manigandan , Liu Guohong, Raja Kumaresan, Sung-Ho Jin

{"title":"Development of triazine-based n-type hosts incorporating naphthalene or quinoline for highly efficient thermally activated delayed fluorescence organic light-emitting diodes","authors":"Ho-Yeol Park , Jin Soo Yoo , Thippan Manigandan , Liu Guohong, Raja Kumaresan, Sung-Ho Jin","doi":"10.1016/j.orgel.2026.107380","DOIUrl":"10.1016/j.orgel.2026.107380","url":null,"abstract":"<div><div>Three novel n-type host materials, 2-(2,5-dimethyl-4-(2-methylnaphthalen-1-yl)phenyl)-4,6-diphenyl-1,3,5-triazine (DPTXMN), 9,9'-(6-(2,5-dimethyl-4-(2-methylnaphthalen-1-yl)phenyl)-1,3,5-triazine-2,4-diyl)<em>bis</em>(9<em>H</em>-carbazole) (DCzTXMN), and 9,9'-(6-(2,5-dimethyl-4-(7-methylquinolin-6-yl)phenyl)-1,3,5-triazine-2,4-diyl)<em>bis</em>(9<em>H</em>-carbazole) (DCzTXMQ) were designed and synthesized as efficient host materials for blue thermally activated delayed fluorescence (TADF) OLEDs. The xylene unit in DPTXMN, DCzTXMN, and DCzTXMQ effectively suppressed π-conjugation, leading to high triplet energies (2.78–2.97 eV). Particularly, DCzTXMN, and DCzTXMQ show excellent thermal stability (T<sub>g</sub>/T<sub>d</sub> up to 136/440 °C). OLEDs employing SiCzCz:n-type host (exciplex system) with t-Bu-<em>v</em>-DABNA emitter exhibited efficient blue emission (∼440 nm). The best-performing device, including SiCzCz and DCzTXMQ achieved a maximum EQE of 26.8 % and a current efficiency of 26.2 cd A<sup>−1</sup>. These results demonstrate that triazine-based n-type hosts incorporating naphthalene or quinoline moieties are promising candidates for next-generation blue TADF OLEDs.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"150 ","pages":"Article 107380"},"PeriodicalIF":2.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145975561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Corrigendum to “Coordination-based doping of MEH-PPV with La(TFSI)3 enables air-free conductivity and stable performance in perovskite solar cells” [Organ. Electron. 148 (2026) 107351] “基于配位的MEH-PPV与La(TFSI)3的掺杂使钙钛矿太阳能电池的无空气导电性和稳定性能”的更正[Organ]。电子，148 (2026)107351 [j]

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-03-01 Epub Date: 2026-01-07 DOI: 10.1016/j.orgel.2025.107370

Seth W. McPherson , Yeh-Chuan Chou , Insoo Shin , Stephen A. Maclean , Dmytro Nykypanchuk , Tai-De Li , Chieh-Ting Lin , Jaemin Kong , Jason A. Röhr , André D. Taylor

引用次数: 0

Electrode engineering for electron and hole injection control in ambipolar polymer transistors toward complementary circuits 面向互补电路的双极性聚合物晶体管电子和空穴注入控制的电极工程

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-03-01 Epub Date: 2026-01-07 DOI: 10.1016/j.orgel.2026.107379

Quanhua Chen , Walid Boukhili , Yong Xu , Dongyoon Khim

{"title":"Electrode engineering for electron and hole injection control in ambipolar polymer transistors toward complementary circuits","authors":"Quanhua Chen , Walid Boukhili , Yong Xu , Dongyoon Khim","doi":"10.1016/j.orgel.2026.107379","DOIUrl":"10.1016/j.orgel.2026.107379","url":null,"abstract":"<div><div>We report electrode engineering of ambipolar polymer field-effect transistors using a top-gate/bottom-contact architecture with the ambipolar copolymer DPP-DTT. By systematically comparing Au, Ni, and Al/Ti source/drain electrodes, we demonstrate modulation of transistor transport characteristics from ambipolar to unipolar electron transport according to electrode work function and energy barrier alignment. Electron mobility increases significantly from 0.04 to 0.36 cm<sup>2</sup> V<sup>−1</sup>s<sup>−1</sup> when switching from Au to Al/Ti electrodes, accompanied by improved threshold voltage, turn-on voltage, and on/off current ratio. Despite similar work functions, Al/Ti electrodes generate higher hole injection barriers and lower electron injection barriers than Ni, effectively suppressing hole current and enabling nearly ideal n-type unipolar operation. Transmission line method analysis confirms reduced contact resistance and enhanced electron injection for Al/Ti electrodes. Integration of optimized n-type transistors with Au-contacted p-type devices result in complementary inverters exhibiting ideal voltage transfer characteristics, high gain (∼51) and optimized noise margin (62 %). These findings highlight the critical role of electrode work function engineering in controlling charge transport polarity and advancing high-performance organic complementary circuits.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"150 ","pages":"Article 107379"},"PeriodicalIF":2.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145947893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improving the performance of perovskite solar cells by using organic small molecule as interfacial layers 利用有机小分子作为界面层改善钙钛矿太阳能电池的性能

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-03-01 Epub Date: 2026-01-05 DOI: 10.1016/j.orgel.2026.107372

Chunyan Liu , Zhongyu Yang , Yanfeng Dai , Dongge Ma

{"title":"Improving the performance of perovskite solar cells by using organic small molecule as interfacial layers","authors":"Chunyan Liu , Zhongyu Yang , Yanfeng Dai , Dongge Ma","doi":"10.1016/j.orgel.2026.107372","DOIUrl":"10.1016/j.orgel.2026.107372","url":null,"abstract":"<div><div>In perovskite solar cells (PSCs), many factors such as carrier mobility, charge extraction and charge transfer between donors and acceptors and the interfaces between different layers affect the performance of devices. Among them, the interfacial layers play an important role as they determine the efficiency of charge extraction. NiO<sub>X</sub> is widely used as an effective hole transport layer material in PSCs due to its advantages of good stability, large band gap and deep valence band. However,the reported solution-processed NiO<sub>X</sub> based PSCs has a relatively low current density (<em>J</em><sub>SC</sub>) and open circuit voltage (<em>V</em><sub>OC</sub>). In this work, an organic small molecule TAPC with high hole mobility is used to modify the NiO<sub>X</sub> hole transport layer. It is found that the performance of the devices modified with NiO<sub>X</sub> hole transport layer has been significantly improved. The obtained maximum power conversion efficiency (PCE) is as high as 18.86 % with improved <em>J</em><sub>SC</sub> and <em>V</em><sub>OC</sub>, and the optimized devices also exhibit better stability.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"150 ","pages":"Article 107372"},"PeriodicalIF":2.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146035845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Cs2BiAgI6 advantage: Interplay of thickness and recombination for high-performance double perovskite solar cells Cs2BiAgI6的优势：厚度和复合的相互作用为高性能双钙钛矿太阳能电池

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-03-01 Epub Date: 2026-01-22 DOI: 10.1016/j.orgel.2026.107385

Aliya A. Arishi, W. Shirbeeny

{"title":"The Cs2BiAgI6 advantage: Interplay of thickness and recombination for high-performance double perovskite solar cells","authors":"Aliya A. Arishi, W. Shirbeeny","doi":"10.1016/j.orgel.2026.107385","DOIUrl":"10.1016/j.orgel.2026.107385","url":null,"abstract":"<div><div>This study presents a rigorous numerical investigation into the performance limits of lead-free <em>Cs</em><sub><em>2</em></sub><em>BiAgI</em><sub><em>6</em></sub> double perovskite solar cells using the wxAMPS framework. We analyze an n–i–p architecture consisting of <em>ITO/ZnO/Cs</em><sub><em>2</em></sub><em>BiAgI</em><sub><em>6</em></sub><em>/Spiro-OMeTAD/Au</em>. To identify the optimal spatial balance between photogeneration and charge transport, the thicknesses of the Cs2BiAgI6 absorber and the Spiro-OMeTAD hole transport layer were systematically varied to 0.1 μm and 0.9 μm, respectively, while maintaining a constant total device thickness of 1.55 μm. The results reveal a distinct non-linear relationship between layer thickness and power conversion efficiency, driven by the physical tradeoff between optical absorption volume and carrier recombination rates. An optimized configuration featuring a 0.4 μm absorber and a 0.6 μm hole transport layer yielded a peak efficiency of 27.2 %. These findings provide a theoretical benchmark for the structural design of high-efficiency, lead-free double perovskite photovoltaics, highlighting the necessity of precise thickness control to mitigate bulk recombination losses.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"150 ","pages":"Article 107385"},"PeriodicalIF":2.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146035816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Additively manufactured organic field effect transistor and circuit with bifunctional molecule engineered dielectric/semiconductor interface 增材制造有机场效应晶体管和双功能分子工程介电/半导体界面电路

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-03-01 Epub Date: 2026-01-14 DOI: 10.1016/j.orgel.2026.107381

Huiwen Bai , Ting Shen , Mohammad Javad Mirshojaeian Hosseini , Robert A. Nawrocki

{"title":"Additively manufactured organic field effect transistor and circuit with bifunctional molecule engineered dielectric/semiconductor interface","authors":"Huiwen Bai , Ting Shen , Mohammad Javad Mirshojaeian Hosseini , Robert A. Nawrocki","doi":"10.1016/j.orgel.2026.107381","DOIUrl":"10.1016/j.orgel.2026.107381","url":null,"abstract":"<div><div>The interface between the organic semiconductor (OSC) and the dielectric plays a crucial role in determining the performance of printed Organic Field-Effect Transistors (OFETs). Through a geometrical molecule search method, a bifunctional molecule called trimethoxyphenylsilane (TMPS) is discovered. This molecule exhibits strong bonding with both the dielectric and the OSC layers. Introducing TMPS to the OSC/dielectric interface reduces hydroxyl (-OH) defects on the surface of the printed dielectric poly(4-vinylphenol) (PVP) and simultaneously improves the crystallinity of the organic semiconductors through π-π interactions between conjugated rings. As a result, the electrical characteristics of TMPS-treated printed OFETs are enhanced. As a demonstration, a resistive load inverter and a three-stage ring oscillator are successfully built using TMPS-treated OFETs, demonstrating strong capability for the use in cascaded circuits. This study validates that TMPS can be generalized to simultaneously engineer the interface between dielectrics and organic semiconductors in OFETs.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"150 ","pages":"Article 107381"},"PeriodicalIF":2.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146035844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Corrigendum to “Theory of carrier accumulation in organic heterojunctions.” and “Carrier accumulation in organic heterojunctions controlled by polarization” “有机异质结中载流子积累理论”和“极化控制的有机异质结中载流子积累”的勘误表

IF 2.6 4区工程技术

Organic Electronics Pub Date : 2026-03-01 Epub Date: 2026-01-20 DOI: 10.1016/j.orgel.2026.107386

Jun-ichi Takahashi

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