Effects of thin metal/metal oxide composite modification layer on ITO anode in organic light-emitting diodes

IF 2.7 4区 工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Jing Yi , Ruiting Zhang , Yanfeng Dai , Dongge Ma
{"title":"Effects of thin metal/metal oxide composite modification layer on ITO anode in organic light-emitting diodes","authors":"Jing Yi ,&nbsp;Ruiting Zhang ,&nbsp;Yanfeng Dai ,&nbsp;Dongge Ma","doi":"10.1016/j.orgel.2025.107294","DOIUrl":null,"url":null,"abstract":"<div><div>The effects of thin metal film gold or silver (Au and Ag) combined with transition metal oxides (TMOs) V<sub>2</sub>O<sub>5</sub> and MoO<sub>3</sub> used as composite modification layer on ITO anode in organic light-emitting diodes (OLEDs) were investigated and compared. It was found that incorporating the thin metal film (Au or Ag) with V<sub>2</sub>O<sub>5</sub> (MoO<sub>3</sub>) modification layer facilitates to improve the hole injection into the hole transport layer (HTL), thereby enhancing the performance of OLEDs. The device with V<sub>2</sub>O<sub>5</sub> -modified thin metal film on ITO exhibited higher electroluminescent (EL) efficiency compared to that with MoO<sub>3</sub>-modified thin metal film. Specifically, the device with the structure ITO/Au (0.5 nm)/V<sub>2</sub>O<sub>5</sub> (1 nm) achieved a current efficiency of 96 cd/A. The ultraviolet photoelectron spectroscopy (UPS) investigation revealed that ITO/thin metal/V<sub>2</sub>O<sub>5</sub> structure has a higher work function than ITO/thin metal/MoO<sub>3</sub>, which contributes to the improved hole injection.</div></div>","PeriodicalId":399,"journal":{"name":"Organic Electronics","volume":"145 ","pages":"Article 107294"},"PeriodicalIF":2.7000,"publicationDate":"2025-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Organic Electronics","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1566119925001004","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

The effects of thin metal film gold or silver (Au and Ag) combined with transition metal oxides (TMOs) V2O5 and MoO3 used as composite modification layer on ITO anode in organic light-emitting diodes (OLEDs) were investigated and compared. It was found that incorporating the thin metal film (Au or Ag) with V2O5 (MoO3) modification layer facilitates to improve the hole injection into the hole transport layer (HTL), thereby enhancing the performance of OLEDs. The device with V2O5 -modified thin metal film on ITO exhibited higher electroluminescent (EL) efficiency compared to that with MoO3-modified thin metal film. Specifically, the device with the structure ITO/Au (0.5 nm)/V2O5 (1 nm) achieved a current efficiency of 96 cd/A. The ultraviolet photoelectron spectroscopy (UPS) investigation revealed that ITO/thin metal/V2O5 structure has a higher work function than ITO/thin metal/MoO3, which contributes to the improved hole injection.

Abstract Image

薄金属/金属氧化物复合改性层对有机发光二极管ITO阳极的影响
研究并比较了金属薄膜金或银(Au和Ag)与过渡金属氧化物(TMOs) V2O5和MoO3复合修饰层对有机发光二极管(oled) ITO阳极的影响。研究发现,将金属薄膜(Au或Ag)与V2O5 (MoO3)改性层相结合,有利于改善空穴注入到空穴传输层(HTL)中,从而提高oled的性能。在ITO表面涂有V2O5修饰金属薄膜的器件比涂有moo3修饰金属薄膜的器件具有更高的电致发光(EL)效率。具体而言,ITO/Au (0.5 nm)/V2O5 (1 nm)结构器件的电流效率为96 cd/ a。紫外光电子能谱(UPS)研究表明,ITO/薄金属/V2O5结构比ITO/薄金属/MoO3结构具有更高的功函数,这有助于改善空穴注入。
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来源期刊
Organic Electronics
Organic Electronics 工程技术-材料科学:综合
CiteScore
6.60
自引率
6.20%
发文量
238
审稿时长
44 days
期刊介绍: Organic Electronics is a journal whose primary interdisciplinary focus is on materials and phenomena related to organic devices such as light emitting diodes, thin film transistors, photovoltaic cells, sensors, memories, etc. Papers suitable for publication in this journal cover such topics as photoconductive and electronic properties of organic materials, thin film structures and characterization in the context of organic devices, charge and exciton transport, organic electronic and optoelectronic devices.
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