2009 International Conference on Microelectronics - ICM最新文献_第5页

System analysis of 2.4 GHz IEEE 802.15.4 compliant frequency synthesizer 2.4 GHz IEEE 802.15.4兼容频率合成器系统分析

2009 International Conference on Microelectronics - ICM Pub Date : 2009-12-01 DOI: 10.1109/ICM.2009.5418653

N. M. Ismail, M. Othman

引用次数: 0

A programmable true piecewise approximation logarithmic amplifier 一种可编程真分段逼近对数放大器

2009 International Conference on Microelectronics - ICM Pub Date : 2009-12-01 DOI: 10.1109/ICM.2009.5418580

M. Shaterian, A. Abrishamifar, H. Shamsi

引用次数: 8

Design of triple-mode Digital Down Converter for WCDMA, CDMA2000 and GSM of Software Defined Radio WCDMA、CDMA2000和GSM三模数字下变频的设计

2009 International Conference on Microelectronics - ICM Pub Date : 2009-12-01 DOI: 10.1109/ICM.2009.5418631

Emad S. Malki, K. Shehata, A. Madian

引用次数: 5

Annealing of Irradiated-Induced defects in power MOSFETs 功率mosfet辐照缺陷的退火

2009 International Conference on Microelectronics - ICM Pub Date : 2009-12-01 DOI: 10.1109/ICM.2009.5418641

E. Bendada, A. Malaoui, M. Mabrouki, K. Quotb, K. Rais

引用次数: 2

Efficient FPGA implementation for the IEEE 802.16e interleaver IEEE 802.16e交织器的高效FPGA实现

2009 International Conference on Microelectronics - ICM Pub Date : 2009-12-01 DOI: 10.1109/ICM.2009.5418660

A. A. Khater, M. Khairy, S. Habib

引用次数: 36

Scaling the bulk-driven MOSFET 缩放体积驱动的MOSFET

2009 International Conference on Microelectronics - ICM Pub Date : 2009-12-01 DOI: 10.1109/ICM.2009.5418591

Christopher Urban, J. Moon, P. R. Mukund

引用次数: 6

Modeling of the pH-ISFET thermal drift pH-ISFET热漂移的建模

2009 International Conference on Microelectronics - ICM Pub Date : 2009-12-01 DOI: 10.1109/ICM.2009.5418627

S. E. Naimi, B. Hajji, Y. Habbani, I. Humenyuk, J. Launay, P. Temple-Boyer

引用次数: 4

Soft error injection using advanced switch-level models for combinational logic in nanometer technologies 采用高级开关级模型的纳米技术组合逻辑软误差注入

2009 International Conference on Microelectronics - ICM Pub Date : 2009-12-01 DOI: 10.1109/ICM.2009.5418615

Prabhleen K. Kalkat, R. Sedaghat, Jalal Mohammad Chikhe, Reza Javaheri

{"title":"Soft error injection using advanced switch-level models for combinational logic in nanometer technologies","authors":"Prabhleen K. Kalkat, R. Sedaghat, Jalal Mohammad Chikhe, Reza Javaheri","doi":"10.1109/ICM.2009.5418615","DOIUrl":"https://doi.org/10.1109/ICM.2009.5418615","url":null,"abstract":"Due to technology scaling, modern digital systems are becoming more prone to single-event transients (SETs) caused by radiation strikes in CMOS logic devices. This has led to the need for better soft error detection methods in order to increase the reliability of logic circuits in nanometer technologies. Present day soft error detection techniques assume that soft errors occur due to voltage pulses which change the logic state of a transistor node. A novel soft error detection concept is used, assuming that voltage fluctuations smaller than logic threshold can eventually result in soft errors. Advanced switch-level models were designed which mimic important characteristics of transistor-level circuits like bidirectional signal flow, driving strength variations and node capacitances and use verilog driving strengths to model different voltage values. The resulting switch-level models eliminate the complexity associated with state-of-art transistor level simulators while achieving desired amount of accuracy and faster simulation. The aim of this paper is to interpret various parameters used in these strength-based switch models in order to find an efficient way of injecting transients into complex logic circuits. The approach has been evaluated experimentally by creating a simulation environment which allows transient injection at internal nodes of switch-level circuits and injecting a wide range of input test vectors to ISCAS'85 benchmarks. The simulation results show that transient injection at drains of switch-level circuits gives better results in terms of accuracy and prevents over-estimation of soft error rate calculations as compared to injection at gates of transistors.","PeriodicalId":391668,"journal":{"name":"2009 International Conference on Microelectronics - ICM","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127839862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Pulse width degradation in 45nm ASIC design due to global and environmental variations 全球和环境变化导致45nm ASIC设计中的脉宽退化

2009 International Conference on Microelectronics - ICM Pub Date : 2009-12-01 DOI: 10.1109/ICM.2009.5418624

Tarun Chawla, Sébastien Marchal, A. Amara, A. Vladimirescu

引用次数: 3

Interconnects parasitic extraction using modified Genetic Algorithm 利用改进的遗传算法互连寄生提取

2009 International Conference on Microelectronics - ICM Pub Date : 2009-12-01 DOI: 10.1109/ICM.2009.5418622

A. S. Abdellatif, A. E. Rouby, Mohamed B. Abdelhalim, A. Khalil

{"title":"Interconnects parasitic extraction using modified Genetic Algorithm","authors":"A. S. Abdellatif, A. E. Rouby, Mohamed B. Abdelhalim, A. Khalil","doi":"10.1109/ICM.2009.5418622","DOIUrl":"https://doi.org/10.1109/ICM.2009.5418622","url":null,"abstract":"Three new Genetic Algorithm (GA) are proposed and used to solve a Curve fitting problem for Parasitic Extraction Macro-modeling application. The first proposed approach, Diagonal GA (DGA); is based on replacing the traditional random population initialization method with a deterministic diagonal-like one. The second proposed approach, Elite Condensation GA (ECGA); is based on fine tuning the GA by explicitly condensing the population around a number of elite individuals. The third proposed approach, ECGA2, is a modified version of ECGA; that chooses elite members among all the population in each generation, then it divides the population into a number of sub-populations where each sub-population is composed of a single elite and a condensed population around it. Then, it performs GA operations on each of those subpopulations separately before merging them all into one population and keep repeating that divide-merging sequence. The performances of these three proposed approaches were measured on an extensive real data sets and used along with the understanding of the physical problem to offer various explanations of the theoretical aspects of the new algorithms.","PeriodicalId":391668,"journal":{"name":"2009 International Conference on Microelectronics - ICM","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130703610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0