E. Bendada, A. Malaoui, M. Mabrouki, K. Quotb, K. Rais
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Annealing of Irradiated-Induced defects in power MOSFETs
An innovative method of device characterization is experimented to qualify annealing Gamma-ray damage in power MOSFETs. The degradation of structural parameters of the body-drain junction for a dose rate of 103.8 rad.mn-1 is presented. Temperature annealing effects, at 100°C, are discussed and analyzed against the evolution of the density trapped oxide and interface charges.
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