Annealing of Irradiated-Induced defects in power MOSFETs

Abstract

An innovative method of device characterization is experimented to qualify annealing Gamma-ray damage in power MOSFETs. The degradation of structural parameters of the body-drain junction for a dose rate of 103.8 rad.mn-1 is presented. Temperature annealing effects, at 100°C, are discussed and analyzed against the evolution of the density trapped oxide and interface charges.