2017 18th International Conference on Electronic Packaging Technology (ICEPT)最新文献_第2页

Investigation on transient catastrophic optical damage in high power AlGaAs/GaAs laser diodes 高功率AlGaAs/GaAs激光二极管瞬态灾难性光损伤研究

2017 18th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2017-08-01 DOI: 10.1109/ICEPT.2017.8046529

Yanning Chen, Y. Qiao, Q. Ma, Jianqiang Li, Jin Shao, Yidong Yuan, Xiaoke Tang, Haifeng Zhang, Dongyan Zhao

引用次数: 0

A hybrid genetic algorithm for automatic layout design of power module 基于混合遗传算法的电源模块自动布局设计

2017 18th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2017-08-01 DOI: 10.1109/ICEPT.2017.8046643

Baisen Hao, Y. Mei, P. Ning

引用次数: 5

Packaging structure design for metal oxide gas sensors 金属氧化物气体传感器封装结构设计

2017 18th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2017-08-01 DOI: 10.1109/ICEPT.2017.8046691

Xiyou Wang, Maofen Zhang, Daoguo Yang

引用次数: 1

Sintering process of mixed solvent system frit to improve the performance of the film in glass/glass laser bonding 采用混合溶剂体系熔块烧结工艺提高玻璃/玻璃激光粘接膜的性能

2017 18th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2017-08-01 DOI: 10.1109/ICEPT.2017.8046416

Yi Li, Rui Tian, Luqiao Yin, Jianhua Zhang

引用次数: 1

Microstructures and properties of Bi-11Ag solder doped with small amounts of Sn 掺少量锡的Bi-11Ag钎料的组织与性能

2017 18th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2017-08-01 DOI: 10.1109/ICEPT.2017.8046505

D. Li, L. Yin, Z. Yao, G. Wang, L.P. Zhang, C.X. Wang

引用次数: 0

Removal of high dose ion-implanted photoresists using dry process 干法去除高剂量离子注入光刻胶

2017 18th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2017-08-01 DOI: 10.1109/ICEPT.2017.8046402

Shuaipeng Wang, Jianqiang Li, Yanning Chen, Dongyan Zhao, Yubo Wang, Haifeng Zhang

引用次数: 1

Impact of substrate materials on packages warpage 基板材料对封装翘曲的影响

2017 18th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2017-08-01 DOI: 10.1109/ICEPT.2017.8046560

Jianxia Hao, Jing Shang, Xiaodong Liu, T. Hang, Liming Gao, Ming Li

{"title":"Impact of substrate materials on packages warpage","authors":"Jianxia Hao, Jing Shang, Xiaodong Liu, T. Hang, Liming Gao, Ming Li","doi":"10.1109/ICEPT.2017.8046560","DOIUrl":"https://doi.org/10.1109/ICEPT.2017.8046560","url":null,"abstract":"Unit warpage in Ball Grid Array (BGA) packages with different substrates due to coefficient of thermal expansion (CTE) and Young's Modulus mismatch was investigated. The effect of substrate materials on BGA packages warpage was analyzed. Thermal Mechanical Analyzer (TMA) and Dynamic Mechanical Analyzer (DMA) were used to measure Glass Transition Temperature (Tg) and CTE and Young's Modulus of the substrates and the properties of these substrates were analyzed. Shadow Moiré was used to measure the unit warpage at room temperature (25°C) and during reflow. A Finite Element Analysis (FEA) method was used to simulate the warpage results to compare with results from the experiment and to verify the results. From this work, Cu, core materials, and solder mask (SM) have a combined effect on Tg, CTE and Young's Modulus of the substrate. Higher CTE of substrate than that of moldcap results in units presenting Cry, and compared with CTE, the modulus plays a dominate role in the strip compress and decreasing modulus of substrate helps to lower unit warpage. The Shadow moiré test results and the simulation results state that the two results are credible.","PeriodicalId":386197,"journal":{"name":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115063282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Metallization of diamond/Al composite surface with Ni-P coating Ni-P涂层金刚石/铝复合材料表面的金属化

2017 18th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2017-08-01 DOI: 10.1109/ICEPT.2017.8046494

Qi-Yuan Shi, Dianhua Wu, D. Ni, D. Wang, Zhi-Quan Liu

引用次数: 0

The electronic properties of zinc-blende GaN, wurtzite GaN and pnma-GaN crystals under pressure 研究了混合锌氮化镓、纤锌矿氮化镓和pma -GaN晶体在压力下的电子特性

2017 18th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2017-08-01 DOI: 10.1109/ICEPT.2017.8046716

Xinghe Luan, C. Feng, H. Qin, Fanfan Niu, Dao-Guo Yang

引用次数: 1

Thermal conductivity of thin finite-size β-SiC calculated by molecular dynamics combined with quantum correction 用分子动力学结合量子校正计算有限尺寸薄β-SiC的热导率

2017 18th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2017-08-01 DOI: 10.1109/ICEPT.2017.8046601

Chengdi Xiao, Hu He, Junhui Li, Sen Cao, Wenhui Zhu

{"title":"Thermal conductivity of thin finite-size β-SiC calculated by molecular dynamics combined with quantum correction","authors":"Chengdi Xiao, Hu He, Junhui Li, Sen Cao, Wenhui Zhu","doi":"10.1109/ICEPT.2017.8046601","DOIUrl":"https://doi.org/10.1109/ICEPT.2017.8046601","url":null,"abstract":"Silicon carbide (SiC) is a most promising alternative material for the next generation of high-power and high-temperature devices duo to excellent performance, such as larger thermal conductivity compared with Silicon. The thermal conductivity of SiC bulk, as well as temperature dependence of thermal conductivity has been investigated in terms of simulations and experiments. However, when the characteristic size of materials is down to nanoscale, the thermal properties will be significantly different from bulk materials. Thus, it is important to understand the heat transport behavior of SiC thin films for developing nanoscale SiC devices. Nevertheless, thermal properties of SiC thin films have not been investigated systematically. In this paper, a non-equilibrium molecular dynamics model combined with quantum correction is presented for characterizing the thermal conductivity of thin finite-size β-SiC. Adopting the Tersoff empirical potential, temperature effect on thermal conductivity is predicted based on this model. It is found that the uncorrected lattice thermal conductivity diminishes evidently with decrease of temperature. Unlike the uncorrected results, the corrected results display a slight increase with temperature to a maximum value at ∼760 K This work provides a possible theoretical and computational basis for heat transfer and dissipation applications of nanoscale β-SiC thin film, and would also help the design of thermal barriers or new thermoelectric materials.","PeriodicalId":386197,"journal":{"name":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","volume":"38 10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114287216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0