Yuan Huang, C. Hang, Yanhong Tian, He Zhang, Chenxi Wang, Xiuli Wang
{"title":"Rapid sintering of copper nanopaste by pulse current for power electronics packaging","authors":"Yuan Huang, C. Hang, Yanhong Tian, He Zhang, Chenxi Wang, Xiuli Wang","doi":"10.1109/ICEPT.2017.8046517","DOIUrl":"https://doi.org/10.1109/ICEPT.2017.8046517","url":null,"abstract":"Sintering of metal nanopaste (NP) has been proposed as an alternative in die-attach bonding for the soldering to overcome such high operation temperature in wide-gap semiconductor power devices. Silver (Ag) NP as one of the candidates has some obstacles for mass production due to the high cost of Ag and vulnerability to the electrochemical migration. In the present study, the authors developed a simple solution method to synthesize copper (Cu) nanoparticles with the mean diameter of 57.5 nm. Cu NP was prepared by dispensing as-prepared Cu nanoparticles into deionized water with the assistance of ultrasonic. Pulsed Electric Current Sintering (PECS) was used to join two pieces of bare copper with Cu NP to achieve strong joints in a short time less than 200 ms. Die-shear testing was used to evaluate the bonding strength. The bonding strength increased with the increasing current and reached the highest value of 58.5 MPa at the current of 1.0 kA. Microstructural analysis of the sintered joints showed that the sintered Cu NP layer had a uniform microstructure with micrometer-sized porosity with the potential for high reliability under high-temperature applications. The PECS was recommended to bond two pieces of bare copper with Cu NP in power electronic applications without any protective atmosphere.","PeriodicalId":386197,"journal":{"name":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129610384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chao Fang, Tong An, F. Qin, Xiaorui Bie, Jingyi Zhao
{"title":"Study on temperature distribution of IGBT module","authors":"Chao Fang, Tong An, F. Qin, Xiaorui Bie, Jingyi Zhao","doi":"10.1109/ICEPT.2017.8046680","DOIUrl":"https://doi.org/10.1109/ICEPT.2017.8046680","url":null,"abstract":"Insulated gate bipolar transistor (IGBT) operates at high current, high power and repeated shock current conditions. Joule heating induced during high current conditions, subsequently raising the temperature of the IGBT module. In this paper, we carried out the DC power cycling test with the 200 A current condition. The temperature distribution and the temperature change process of the whole IGBT module are recorded by using a high-speed infrared detecting camera. The finite element model of IGBT module is established by using finite element analysis software ABAQUS. By simulating DC power cycling test, the temperature distribution of IGBT module under different current loads is analyzed, the temperature change process of the whole IGBT module is studied, and the maximum temperature location of the IGBT module is determined. Comparing with the experimental data obtained under the same conditions, the simulation results are in good agreement with the experimental data, which verifies the finite element model.","PeriodicalId":386197,"journal":{"name":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130581364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Wei, Siobhan D. Ma, Da-lei Li, Y. Jia, Heng-lin Liu
{"title":"Influence of thermomigration on creep behavior of Cu/Sn0.7Cu/Cu solder joint","authors":"G. Wei, Siobhan D. Ma, Da-lei Li, Y. Jia, Heng-lin Liu","doi":"10.1109/ICEPT.2017.8046399","DOIUrl":"https://doi.org/10.1109/ICEPT.2017.8046399","url":null,"abstract":"For revealing the influences of thermomigration effect (TM) on the creep properties of interconnecting solder joints in electronic packaging industry, the creep behavior of Cu/Sn0.7Cu/Cu solder joints were researched under temperature gradient of 1043°C/cm and isothermal temperature of 100°C(median temperature) with different shear stress, respectively. It is approved that the creep lifetime of the solder joints is largely reduced under TM effect and this trend is more evident with shear stress increasing. It is also affirmed that since the creep fracture position shifts from the center to the hot end in the solder joints compared with that under isothermal temperature, this suggests that the mechanical properties in the solder joints are nonuniform. The degradation of the creep properties of the solder joints induced by TM effect will bring a new reliability issue in electronic packaging industry.","PeriodicalId":386197,"journal":{"name":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130847104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The influence of the DC current on directional crystallization process of peritectic alloys simulation","authors":"Guo-tian Wang, H. Ding, Hongzhe Sun","doi":"10.1109/ICEPT.2017.8046513","DOIUrl":"https://doi.org/10.1109/ICEPT.2017.8046513","url":null,"abstract":"A Transparent and peritectic alloys of AMPD-4.1%SCN was selected to investigate the process of crystallization and the influence of the DC current on crystal growth. The Charge Coupled Device (CCD) in microscope and a temperature instrument with communication to computer were snap the real time profile of crystals and record the temperature date respectively. Experimental results show that under the action of electric current the primary alpha particles of directional crystallization AMPD-4.1%SCN of peritectic alloys simulation towards the positive direction gradually and make the composition of the liquid phase in front of solidification interface close to the peritectic point and promote the peritectic reaction. And the influence of DC current on dendrite refining is obviously, with the increase of current density, the dendritic spacing exponential decline at a time. In addition, the direct current (DC) can reduce the driving force of solidification need and reduce the undercooling degree of solidification need, the direct impact is the dendrite growth rate increases along linearly with the increase of current.","PeriodicalId":386197,"journal":{"name":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131593990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A new approach to minimize package warpage in reflow process","authors":"C. Liu, Ming Li, Jicun Lu, Liming Gao","doi":"10.1109/ICEPT.2017.8046609","DOIUrl":"https://doi.org/10.1109/ICEPT.2017.8046609","url":null,"abstract":"Package warpage is often a problem in surface mount reflow process especially for thin package. Large warpage prevents package solder balls to be connected to PCB pads and results in low process yield. In order to effectively minimize warpage in reflow process, this paper proposed a new approach to reduce package warpage by temporally bonding the back of the packaged component to a rigid plate. In the reflow process, the bonded rigid plate reduces the bending of package and makes sure that its warpage is in process limit at all temperatures. The component is soldered on PCB after reflow process. The last step is to remove the plate that is bonded to the packaged component. We employed a thin Flip Chip Ball Grid Array (FCBGA) package with flexible substrate as an example to prove the effectiveness of the new warpage minimization approach.","PeriodicalId":386197,"journal":{"name":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115988635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hongjie Liu, W. Tan, Lanxia Li, Xingming Cheng, Zhen Wang
{"title":"Study of epoxy molding compound with high dielectric constant","authors":"Hongjie Liu, W. Tan, Lanxia Li, Xingming Cheng, Zhen Wang","doi":"10.1109/ICEPT.2017.8046605","DOIUrl":"https://doi.org/10.1109/ICEPT.2017.8046605","url":null,"abstract":"with the extending of the storage space capacity of semiconductor device, more and more important data in the business have been accumulated in the device. Thus, the security enhancement becomes the crucial thing must be solved. Fingerprint, due to its properties of “unique by individual” and “unchangeable through life” as well as free from entering password turns into the first choice of personal identification method. Epoxy molding compound (EMC) with high dielectric constant (Dk), as the supporting material of fingerprint authentication sensors becomes the research hotspot in the field. For the dielectric constant of the epoxy resin and phenolic resin were changeless with their structure change, more attempts have been carried out on changing the fillers of EMC. Nowadays, the most commonly used fillers are alumina and barium titanate. Here, we compared the epoxy molding compound filled with alumina and barium titanate, and found that with the increasing of the content of both alumina and barium titanate, the dielectric constant of epoxy molding compound increased, and the Dk value of EMC filled with all alumina was about 7, however EMC packed all with barium titanate possessed the Dk value as high as 25. Meanwhile, the thermal conductivity of EMC with increased with the loading level of alumina increase, and with the value as high as 2.6W/m.K. For the spherical structure of alumina, the EMC with alumina in disclosed better flowability than that with barium titanate in. At last, EMC filling with barium titanate was difficult to be colored, which needs more coloring agent than normal.","PeriodicalId":386197,"journal":{"name":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122571880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Package & board level reliability study of 0.35mm fine pitch wafer level package","authors":"P. Sun, Jun Liu, Cheng Xu, Liqiang Cao","doi":"10.1109/ICEPT.2017.8046464","DOIUrl":"https://doi.org/10.1109/ICEPT.2017.8046464","url":null,"abstract":"0.35mm fine pitch wafer level chip scale package (WLCSP) has been developed by NCAP for portable electronic applications. It can provide 196 pin counts in 5mm × 5mm package body size. This paper reports the development work of WLCSP and the package level and board level reliability study including thermal cycling and drop test. The technology is evaluated using a 5mm × 5mm test vehicle with 0.35mm pitch 14×14 full array solder balls. WLCSP TV is fabricated on 300mm diameter wafer. Finite element modeling (FEM) is carried out and the result is compared with experimental data. In the package level reliability study, there is no PI crack or electrical open/short failure after reliability test. In the board level thermal cycling test, the 0.35mm fine pitch WLCSP can pass 300 cycles without underfill protection. In addition to TC test, board level drop test is also evaluated. Drop test board is designed following JEDEC standard JESD22A-112B. PCB thickness is 1.0mm. Cu pad size is 0.28mm and it structure is solder mask defined (SMD) with OSP surface finish. In the drop test without underfill, the first failure is 42 cycles and a characteristic lifetime is 95 cycles. 0.35mm fine pitch WLCSP shows robust structure in both package and board level reliability tests.","PeriodicalId":386197,"journal":{"name":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127153089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A highly sensitive flexible pressure sensor based on multi-scale structure and silver nanowires","authors":"Longquan Ma, X. Shuai, Pengli Zhu, R. Sun","doi":"10.1109/ICEPT.2017.8046690","DOIUrl":"https://doi.org/10.1109/ICEPT.2017.8046690","url":null,"abstract":"With the continuous development of industry 4.0, the status of high-performance flexible sensor becomes more and more prominent, which plays an important role in a variety of advanced technologies, such as electronic skins, human-machine interfaces, biomedical diagnostics and soft robotics. To realize industrial applications of the flexible pressure sensor, it needs to have high sensitivity, short response time, low detection limit and high cycle stability. Generally speaking, pressure sensors can be divided into piezoelectric sensors, capacitive sensors and resistive sensors. Due to its ease of preparation, excellent performance and high stability, flexible electrodes with microstructures have been widely used in pressure sensors. In this paper, a simple tensile-oxidation-recovery method is used to obtain the elastomeric electrode with multi-scale structure. The pressure sensor exhibits high sensitivity, fast response and relaxation time, and high cycle stability. In addition, a pressure sensor with a multi-scale structure exhibits pretty high bending stability, high cycle stability (>1000 times), small hysteresis and fast response (<100ms). Flexible resistive pressure sensor with low cost manufacturing and outstanding performance will be widely used in electronic skin, man-machine interface, biomedical diagnosis, soft robot and other potential applications.","PeriodicalId":386197,"journal":{"name":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","volume":"2006 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125840925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Package stiffener optimization for high speed signal integrity and electromagnetic compatibility","authors":"B. Wu","doi":"10.1109/ICEPT.2017.8046397","DOIUrl":"https://doi.org/10.1109/ICEPT.2017.8046397","url":null,"abstract":"In this paper, we study the electrical performance of a flip-chip ball grid array package assembled with a alloy steel stiffener on top. The metal plate on the chip package could create the cavity resonance at sensitive frequency bands, thus introducing couplings and interferences among high speed digital signals and analog or radio frequency signals. It affects the signal transmission, such as impedance and phase delay for surface microstrip routings. An electromagnetic field simulation is adopted to optimize the package stiffener shape for high speed signal integrity and electromagnetic compatibility. Proper positioning of stitching ground vias around the package edge would suppress the interference and radiation leakage. An experimental measurement using VNA and EM chamber is taken to validate the modeling results and signal performance. A good correlation is achieved to mitigate the design risks of different functioning scenarios.","PeriodicalId":386197,"journal":{"name":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124089911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Degradation mechanism analysis for phosphor/silicone composites aged under high temperature and high humidity condition","authors":"Xiao Luo, Jiajie Fan, Mengni Zhang, C. Qian, Xuejun Fan, Guoqi Zhang","doi":"10.1109/ICEPT.2017.8046684","DOIUrl":"https://doi.org/10.1109/ICEPT.2017.8046684","url":null,"abstract":"High power phosphor-converted white light emitting diodes (pc-WLEDs) are proposed to substitute the traditional lighting sources owing to their benefits in high luminous efficiency, low power consumption, long lifetime and environmentally friendly. Currently, the most effective approach to fabricate a pc-WLED package is to cover the phosphor/silicone composites on a blue LED chip using the deposition or thermal-pressing technology. The mechanism for generating white light from pc-white LEDs is a combination of blue light emitted by an LED chip and the excited yellow light from phosphors. In that case, the phosphor/silicone composite coated on the LED chip is always exposed under the environment of high temperature and high humidity. This study investigates the long-term degradation failure mechanisms of phosphor/silicone composites aged under the high temperature and high humidity condition. Three composites are prepared by mixing three widely used phosphor powders with silicone respectively. According to the SEM/EDX and FTIR analysis and simulated experiment, it shows that the degradation of phosphor/silicone composites aged under the high temperature & high humidity condition is related to the change of its pH value, which can degrade both the light-conversion efficiency of phosphors and the transmittance of silicone.","PeriodicalId":386197,"journal":{"name":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126728008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}