干法去除高剂量离子注入光刻胶

2017 18th International Conference on Electronic Packaging Technology (ICEPT) Pub Date : 2017-08-01 DOI:10.1109/ICEPT.2017.8046402

Shuaipeng Wang, Jianqiang Li, Yanning Chen, Dongyan Zhao, Yubo Wang, Haifeng Zhang

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引用次数: 1

摘要

干刻蚀工艺是MEMS中最常见的技术之一。在本文中，我们研究了在低温下，通过操作等离子体源功率和氧流量在单步去除高剂量植入光阻剂时所观察到的速率增强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Removal of high dose ion-implanted photoresists using dry process

Dry etching process are some of the most familiar MEMS technology. In this paper, we study the rate enhancements observed through operation of the power of plasma source and the oxygen flow rate in a single step at low temperature for high dose implanted photoresist removal.

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2017 18th International Conference on Electronic Packaging Technology (ICEPT)

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