{"title":"Removal of high dose ion-implanted photoresists using dry process","authors":"Shuaipeng Wang, Jianqiang Li, Yanning Chen, Dongyan Zhao, Yubo Wang, Haifeng Zhang","doi":"10.1109/ICEPT.2017.8046402","DOIUrl":null,"url":null,"abstract":"Dry etching process are some of the most familiar MEMS technology. In this paper, we study the rate enhancements observed through operation of the power of plasma source and the oxygen flow rate in a single step at low temperature for high dose implanted photoresist removal.","PeriodicalId":386197,"journal":{"name":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 18th International Conference on Electronic Packaging Technology (ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT.2017.8046402","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Dry etching process are some of the most familiar MEMS technology. In this paper, we study the rate enhancements observed through operation of the power of plasma source and the oxygen flow rate in a single step at low temperature for high dose implanted photoresist removal.