2013 21st Iranian Conference on Electrical Engineering (ICEE)最新文献_第5页

Probabilistic modelling of electric vehicles' parking lots charging demand 电动汽车停车场充电需求的概率建模

2013 21st Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2013-05-14 DOI: 10.1109/IRANIANCEE.2013.6599716

M. Amini, M. P. Moghaddam

引用次数: 36

Modeling vehicle safety in vehicular networks using Markov chain model based on cooperative awareness 基于协同感知的马尔可夫链模型在车联网中的车辆安全建模

2013 21st Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2013-05-14 DOI: 10.1109/IRANIANCEE.2013.6599819

S. Hosseini, S. Yousefi, M. Ashrafi

{"title":"Modeling vehicle safety in vehicular networks using Markov chain model based on cooperative awareness","authors":"S. Hosseini, S. Yousefi, M. Ashrafi","doi":"10.1109/IRANIANCEE.2013.6599819","DOIUrl":"https://doi.org/10.1109/IRANIANCEE.2013.6599819","url":null,"abstract":"Main concern of many safety applications in emergency situations is determining the safety of a vehicle respect to the other ones. Consecutive packet losses reduce the overall performance of a safety application which using vehicular networks as its source of awareness. Thus, determining the impact of consecutive packet losses on safety and awareness seems critical. However, speed, acceleration and the other dynamic properties of the vehicles play an important role in determining number of tolerable packet losses and safety assessment process. In this paper, we model the safety and awareness values according to consecutive packet losses using Markov chain model. Our model serves a novel and promising framework for analyzing a vehicle safety based on the current situation of the network and the vehicle dynamical properties. This model gives us the channel situation as well as the vehicle risk value. In the proposed model, the uncertainty of the driver perception about an upcoming event due to the lack of information is also taken into account. Using this model, one can investigate the impact of distance and velocity on safety efficiently.","PeriodicalId":383315,"journal":{"name":"2013 21st Iranian Conference on Electrical Engineering (ICEE)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132386967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A novel CMOS image sensor for high speed parallel integral image computation 一种用于高速并行积分图像计算的CMOS图像传感器

2013 21st Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2013-05-14 DOI: 10.1109/IRANIANCEE.2013.6599658

Y. Hoseini, S. Sayedi, S. Sadri

引用次数: 0

Study of a high sensitivity transverse comb-drive as small force sensor 高灵敏度横向梳状驱动小型力传感器的研究

2013 21st Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2013-05-14 DOI: 10.1109/IRANIANCEE.2013.6599679

S. A. Ahmadi, S. Fanaei, S. Barakati

引用次数: 1

A new IR-UWB pulse to mitigate coexistence issues of UWB and narrowband systems 一种新的IR-UWB脉冲，以缓解UWB和窄带系统共存的问题

2013 21st Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2013-05-14 DOI: 10.1109/IRANIANCEE.2013.6599828

Sayed Vahid Mir-Moghtadaei, A. Z. Nezhad, A. Fotowat-Ahmady

引用次数: 4

Motion planning of a spherical robot using eXtended Classifier Systems 基于扩展分类器系统的球形机器人运动规划

2013 21st Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2013-05-14 DOI: 10.1109/IRANIANCEE.2013.6599643

M. Esfandyari, M. Roozegar, M. Shariat Panahi, M. Mahjoob

引用次数: 7

Torque ripple reduction of SRM drives below the base speed using commutation angles control 转矩脉动减少的SRM驱动器低于基本速度使用换向角控制

2013 21st Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2013-05-14 DOI: 10.1109/IRANIANCEE.2013.6599798

A. Shahabi, A. Rashidi, S. M. Saghaian-Nejad

引用次数: 16

Joint power and subcarrier allocation in OFDMA-based cooperative cognitive networks 基于ofdma的协同认知网络中的联合功率与子载波分配

2013 21st Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2013-05-14 DOI: 10.1109/IRANIANCEE.2013.6599637

Yoones Hashemi, A. Olfat

引用次数: 1

A new sub-threshold 7T SRAM cell design with capability of bit-interleaving in 90 nm CMOS 一种新的具有90 nm CMOS位交错能力的亚阈值7T SRAM单元设计

2013 21st Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2013-05-14 DOI: 10.1109/IRANIANCEE.2013.6599738

G. Pasandi, S. M. Fakhraie

{"title":"A new sub-threshold 7T SRAM cell design with capability of bit-interleaving in 90 nm CMOS","authors":"G. Pasandi, S. M. Fakhraie","doi":"10.1109/IRANIANCEE.2013.6599738","DOIUrl":"https://doi.org/10.1109/IRANIANCEE.2013.6599738","url":null,"abstract":"In this paper we present a new Static Random Access Memory (SRAM) that has 7 transistors in each cell. This idea allows for bit-interleaving that makes the SRAM more reliable against the soft errors. One of the challenges of a conventional 6 transistor (6T) SRAM cell in sub-threshold region is sizing of its access transistors. Here by separating access transistors of reading and writing, we mitigate this challenge. By using a minimum-size access transistor for reading, probability of unsuccessful read reduces. To have a more successful write operation, we make one of the inverters of the cell that is fighting with the write access transistor, weaker during write operation by floating its supply voltage and ground rails. After write operation, this inverter returns back to normal mode. Simulation results in 90 nm CMOS technology show that our design satisfies 4.5-sigma criterion for reading and writing at supply voltage of 300 mV. Compared to conventional 6T SRAM cell, our design improves read-time and write-time significantly. For example at supply voltage of 500 mV, these improvements are 137 and 83 percents, respectively. Comparing power and energy consumption for single write operation of the proposed 7T SRAM cell at supply voltage of 300mV with conventional 6T SRAM cell at 800mV (i.e. minimum achievable voltage for this SRAM cell) shows improvements of 133.4X and 266.78X, respectively.","PeriodicalId":383315,"journal":{"name":"2013 21st Iranian Conference on Electrical Engineering (ICEE)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123674196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 33

Mutual coupling between two microstrip patch antennas on concave and convex cylindrical surfaces 两个微带贴片天线在凹凸圆柱面上的相互耦合

2013 21st Iranian Conference on Electrical Engineering (ICEE) Pub Date : 2013-05-14 DOI: 10.1109/IRANIANCEE.2013.6599841

K. Hosseini, Z. Atlasbaf

引用次数: 1