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Optoelectronically optimized colored thin-film CZTSSe solar cells 光电优化彩色薄膜CZTSSe太阳能电池
International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2019-12-06 DOI: 10.1117/12.2534592
F. Ahmad, Tom H. Anderson, T. Lenau, A. Lakhtakia
{"title":"Optoelectronically optimized colored thin-film CZTSSe solar cells","authors":"F. Ahmad, Tom H. Anderson, T. Lenau, A. Lakhtakia","doi":"10.1117/12.2534592","DOIUrl":"https://doi.org/10.1117/12.2534592","url":null,"abstract":"Rooftop solar cells may become more acceptable if they are colored, e.g., red or bluish green, which requires that a certain part of the incoming solar spectrum be reflected. We implemented and optimized an optoelectronic model for Cu2ZnSn(SξSe1-ξ)4 (CZTSSe) solar cells containing (i) a conventional 2200-nm-thick CZTSSe layer with homogeneous bandgap, or (ii) an ultrathin CZTSSe layer with optoelectronically optimized sinusoidally nonhomogeneous bandgap, or (iii) a CZTSSe layer with optoelectronically optimized linearly nonhomogeneous bandgap. Either complete or partial rejection of either red or bluish green photons was incorporated in the model. Calculations show that on average, the efficiency of a typical solar cell will be reduced by about 9% if 50% red photons are reflected or by about 13% if 50% blue-green photons are reflected. The efficiency reduction increases to about 18% if all red photons are reflected or about 26% if all blue-green photons are reflected.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123300194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and fabrication of tunable inductors based on vanadium dioxide thin film 基于二氧化钒薄膜的可调谐电感的设计与制造
International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2019-12-06 DOI: 10.1117/12.2536937
E. Shin, Liangyu Li, K. Pan, G. Subramanyam
{"title":"Design and fabrication of tunable inductors based on vanadium dioxide thin film","authors":"E. Shin, Liangyu Li, K. Pan, G. Subramanyam","doi":"10.1117/12.2536937","DOIUrl":"https://doi.org/10.1117/12.2536937","url":null,"abstract":"Vanadium dioxide (VO2) is a well-known phase change material that shows a metal to insulator transition at temperatures near 68 °C. It has many potential applications in science and engineering. In this study, VO2 thin film based planar spiral tunable inductors were designed and fabricated on a sapphire substrate. This approach can be a potential solution for reconfigurable RF/microwave wireless communication systems. According to the experimental results, fabricated inductors show a 43.4 % (from 2.19 nH to 1.24 nH) tuning range at 2 GHz when the VO2 thin film layer undergoes the insulator-to-metal transition from room temperature to temperatures above the transition. This result confirms that the proposed inductor structure was fully functional with the successful inductance tuning capability.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128882190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Artificial neural network to estimate the refractive index of a liquid infiltrating a chiral sculptured thin film in a sensor chip 用人工神经网络估计渗透手性雕刻薄膜的液体在传感器芯片中的折射率
International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2019-12-06 DOI: 10.1117/12.2530355
Patrick D Mcatee, S. Bukkapatnam, A. Lakhtakia
{"title":"Artificial neural network to estimate the refractive index of a liquid infiltrating a chiral sculptured thin film in a sensor chip","authors":"Patrick D Mcatee, S. Bukkapatnam, A. Lakhtakia","doi":"10.1117/12.2530355","DOIUrl":"https://doi.org/10.1117/12.2530355","url":null,"abstract":"We experimentally expanded the capabilities of optical sensing based on surface plasmon resonance in a prism- coupled configuration by incorporating artificial neural networks (ANNs). We fabricated a sensor chip comprising a metal thin film and a porous chiral sculptured thin film (CSTF) deposited successively on a glass substrate that can be affixed to the base of a triangular prism. When a fluid is brought in contact with the exposed face of the CSTF, the latter is infiltrated. As a result of infiltration, the traversal of light entering one slanted face of the prism and exiting the other slanted face of the prism is affected. We trained an ANN using measured reflectance data and found that the presence of the CSTF does not inhibit sensing performance. This finding clears the way for further research on using a single sensor chip for simultaneous multi-analyte sensing.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134580442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Study on spectral response characteristics of NEA GaAlAs/GaAs vacuum photodiode based on external electric field 基于外电场的NEA GaAlAs/GaAs真空光电二极管光谱响应特性研究
International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2019-12-06 DOI: 10.1117/12.2535708
Rongguo Fu, Gaoqi Zhang, Zhaoxi Liu, Guiyuan Wang, Tongchun Sun
{"title":"Study on spectral response characteristics of NEA GaAlAs/GaAs vacuum photodiode based on external electric field","authors":"Rongguo Fu, Gaoqi Zhang, Zhaoxi Liu, Guiyuan Wang, Tongchun Sun","doi":"10.1117/12.2535708","DOIUrl":"https://doi.org/10.1117/12.2535708","url":null,"abstract":"In this paper, GaAlAs/GaAs vacuum photodiodes are used to test the spectral response of different external electric fields, and the influence of external electric field on NEA GaAlAs/GaAs photocathode is analyzed. Based on the spectral response curves under different bias voltages, the external voltage increases and the corresponding spectral response sensitivity increases. As the bias voltage increases, the sensitivity of the spectral response increases slowly and gradually becomes saturated. This is mainly due to the fact that under the action of a strong field, the photoelectron obtains a sufficiently high energy to escape into the vacuum, resulting in a spectral response sensitivity tending to saturation.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"185 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132569530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metal-insulator transition (MIT) actuators for microswitching applications 微开关应用的金属-绝缘体过渡(MIT)致动器
International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2019-12-06 DOI: 10.1117/12.2534711
P. Mahanta, Mohiuddin Munna, R. Coutu
{"title":"Metal-insulator transition (MIT) actuators for microswitching applications","authors":"P. Mahanta, Mohiuddin Munna, R. Coutu","doi":"10.1117/12.2534711","DOIUrl":"https://doi.org/10.1117/12.2534711","url":null,"abstract":"Transitional metal oxides have generated considerable interest in electronics and other engineering applications over the last few decades. These materials show several orders of magnitude metal-insulator transition (MIT) when triggered by an external stimuli. In this paper, an MIT (Vanadium Dioxide (VO2)) -based bimorph cantilever shows promising performance due to its large volumetric work density, ultrafast response, and reliability. This this work, we propose and simulate a cantilever actuated via VO2 for a micro-contact switch. Our results show VO2 based actuators show promising performance in terms of deflection, resonance frequency, and lifetime.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132937104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electronic structure and optical properties of native point defects on Si-doped GaN (0001) surface si掺杂GaN(0001)表面原生点缺陷的电子结构和光学性质
International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2019-12-06 DOI: 10.1117/12.2536285
Y. Ju, Lei Liu, F. Lu
{"title":"Electronic structure and optical properties of native point defects on Si-doped GaN (0001) surface","authors":"Y. Ju, Lei Liu, F. Lu","doi":"10.1117/12.2536285","DOIUrl":"https://doi.org/10.1117/12.2536285","url":null,"abstract":"This paper investigates the formation energy, atomic structure, electronic structure and optical properties of native point defects on n-GaN (0001) surface based on the first-principles of the density functional theory. The results find that the 𝑉𝑁 is not easy to exist and the 𝑉𝐺𝑎, 𝑁𝐺𝑎 or 𝑁𝑖 defects are most likely to appear on the n-type GaN surface. The substitutional defect 𝑁𝐺𝑎 , the interstitial defect 𝑁𝑖 and the single Ga vacancy cause the conduction band to drop and the Fermi level to enter the conduction band in a deeper extent. However, both the valence band and the conduction band move up at the same time with the increase of Ga vacancies, exhibiting p-type characteristics and reducing the n-type conductivity of the surface. The N-vacancy makes the conduction band shift upwards, which reduces the n-type metal conductivity. It is also found that the reduction of photon adsorption on the surface affects the photo-emission of the surface, which is detrimental to the optoelectronic devices with n-GaN and metal contacts. This study shows that 𝑉𝐺𝑎, 𝑁𝐺𝑎 and 𝑁𝑖 native point defects all increase the doping difficulty of n-type GaN films and have a certain value for the fabrication of high-performance optoelectronic devices with n-GaN and metal contacts.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116872204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoactive hybrid ZnO/ N-Ag -TiO2 films for photocatalytic water purification: nanofibers vs nanorods 用于光催化水净化的光活性ZnO/ N-Ag -TiO2杂化膜:纳米纤维与纳米棒
International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2019-12-06 DOI: 10.1117/12.2534307
Pierre G Ramos, L. Sánchez, Juan M. Rodriguez
{"title":"Photoactive hybrid ZnO/ N-Ag -TiO2 films for photocatalytic water purification: nanofibers vs nanorods","authors":"Pierre G Ramos, L. Sánchez, Juan M. Rodriguez","doi":"10.1117/12.2534307","DOIUrl":"https://doi.org/10.1117/12.2534307","url":null,"abstract":"The light absorption of wide bandgap semiconductors in contaminated water, allows them to promote redox chemical reactions. The foremost condition that ensures success is related to the spontaneous jump in the energy of the photogenerated charge carriers. The jump is from their conduction/valence band energy positions to the oxidizing/reducing levels of those contaminants, which produces the so-called heterogeneous photocatalytic water purification. In this work, ZnO thin films composed by nanostructured nanofibers and nanorods (NRs) were compared to address the drawbacks such as low absorption of the solar spectra, low active surface area, charge carrier’s recombination. These films were fabricated with various coupling and doped materials by electrospinning and hydrothermal techniques on fluorine-doped tin oxide (FTO) glass substrate. First, ZnO/TiO2 films were fabricated using different zinc acetate-to-PVA ratios by an electrostatically modified electrospinning technique and then sintered at 600°C. Second, ZnO doped with nitrogen and silver (ZnO:N-Ag) nanorods films were vertically supported on undoped and N doped ZnO seed layers fabricated with different N:Zn ratio in the solution precursor by a wet chemical method.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129317999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The transmission volume-phase holographic grating recorded on dichromated gelatin film used in Raman spectrometer 在重铬明胶薄膜上记录透射体相全息光栅用于拉曼光谱仪
International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2015-11-06 DOI: 10.1117/12.2199835
Qijing Mei, Peng Liu, Minxue Tang
{"title":"The transmission volume-phase holographic grating recorded on dichromated gelatin film used in Raman spectrometer","authors":"Qijing Mei, Peng Liu, Minxue Tang","doi":"10.1117/12.2199835","DOIUrl":"https://doi.org/10.1117/12.2199835","url":null,"abstract":"With the intrinsic advantages of high diffraction efficiency, signal to noise ratio, wavelength and angular selectivity, and low scattering and absorption, volume phase holographic grating (VPHG) has been widely used for spectroscopy, telecommunications, astronomy and ultra-fast laser sciences. The transmission VPHG combined with on-axis imaging lenses can be used in the Raman spectroscopic imaging, which enables a spectrometer to work at high resolution over a wide field of view, and compresses the configuration to achieve very little vignetting. The subject of this paper is to design a kind of transmission VPHG used in Raman Spectrometer with high diffraction efficiency theoretically. According to the Bragg condition and the coupled wave theory, the diffraction efficiency of transmission VPHG recorded on dichromated gelatin (DCG) has been optimized by using G-solver software, which is applicable to the visible waveband ranging from 0.46μm to 0.70μm. The effects of the recording and reconstruction setup parameters, the amplitude of the index modulation (Δn) and the thickness of the gelatin layer (d), and the polarization state of reconstruction beams on the diffraction efficiency properties of the gratings are analyzed at the same time.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127504230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Light emission in silicon: from device physics to applications 硅中的光发射:从器件物理到应用
International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2015-11-06 DOI: 10.1117/12.2199841
Kaikai Xu, N. Ning, K. Ogudo, J. Polleux, Qi Yu, L. Snyman
{"title":"Light emission in silicon: from device physics to applications","authors":"Kaikai Xu, N. Ning, K. Ogudo, J. Polleux, Qi Yu, L. Snyman","doi":"10.1117/12.2199841","DOIUrl":"https://doi.org/10.1117/12.2199841","url":null,"abstract":"Silicon Photonics is an emerging field of research and technology, where nano-silicon can play a fundamental role. Visible light emitted from reverse-biased p-n junctions at highly localized regions, where avalanche breakdown occurs, can be used to realize a visible electro-optical sources in silicon by means of light-emitting diodes (Si-LEDs) is reviewed by characterizing the spectral distribution. Regarding applications, a monolithic optoelectronic integrated circuit (OEIC) for on-chip optical interconnection based on standard CMOS technology is discussed. Although there are some of the present challenges with regard to the realization of suitable electro-optical elements for diverse integrated circuit applications, the type of silicon light source can be further developed into be a Si-based optical short-distance on-chip optical interconnect applications.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128646052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Method for the measurement of surface-relief grating’s profile using initial phase of diffraction wave 利用衍射波初始相位测量表面浮雕光栅轮廓的方法
International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2015-11-06 DOI: 10.1117/12.2197989
Fanrong Feng, Jianhong Wu, Fei Gao
{"title":"Method for the measurement of surface-relief grating’s profile using initial phase of diffraction wave","authors":"Fanrong Feng, Jianhong Wu, Fei Gao","doi":"10.1117/12.2197989","DOIUrl":"https://doi.org/10.1117/12.2197989","url":null,"abstract":"The analysis of initial phase of diffraction wave of grating mask is based on rigorous coupled-wave analysis method. In this paper, the general diffraction analysis numerical code based on the rigorous coupled-wave analysis (RCWA) is written by MATLAB software to calculate the 0th refraction wave of grating mask. Since large measurement errors will occur while measuring the grove shape by AFM, the method of measuring the initial phase of diffraction wave was proposed and the feasibility of this method has also been verified.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121790000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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