International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors最新文献

{"title":"Ultrafast all-optical manipulation of magnetization in ferromagnetic thin films","authors":"Yongmin Liu","doi":"10.1117/12.2647640","DOIUrl":"https://doi.org/10.1117/12.2647640","url":null,"abstract":"We report ultrafast all-optical manipulation of magnetization in ferromagnetic Co/Pt thin films, which are covered by an Au capping layer or Au nanoparticles. In the first configuration, we observe robust all-optical helicity-dependent switching of magnetization under different conditions. In the second configuration, the strong plasmonic resonance of Au nanoparticles results in an 18.5% decrease in the minimum laser power required to manipulate the magnetization.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"12477 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131339171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Black phosphorus ink formulation for aerosol jet printing of planar and conformal optoelectronics","authors":"Florent Muramutsa, Samuel V. Pedersen, J. Logan, M. Eppel, Mia Busuladzic-Begic, J. Eixenberger, J. Wood, F. Ouchen, H. Subbaraman, C. Husko, B. Jaques, E. Heckman, David Estrada","doi":"10.1117/12.2647379","DOIUrl":"https://doi.org/10.1117/12.2647379","url":null,"abstract":"The ink formulation process of stable black phosphorus (BP) inks for aerosol jet printing (AJP) is presented. Formulating BP stable photonic inks involves tailoring the flake size and ink solvents to AJP. Single crystal BP inks were used to print both backgated FET devices with a resistivity as low as 105Ω-cm and the resulting thin films showed photoluminescence emission in the NIR regime paving the way to printed optoelectronic devices.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122796644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel phase formation and magnetism at the Sb2Te3/Ni80Fe20 interface","authors":"A. Will-Cole, James Hart, A. Podpirka, M. Matzelle, Nirjhar Bhattacharjee, S. Patel, Isabel Martos-Repath, B. Lou, S. Tolbert, A. Bansil, J. Cha, D. Heiman, N. Sun","doi":"10.1117/12.2647775","DOIUrl":"https://doi.org/10.1117/12.2647775","url":null,"abstract":"Investigation into the interface formed between Sb2Te3/Ni80Fe20 heterostructures – this is studied using temperature dependent magnetometry, scanning transmission electron microscopy, ferromagnetic resonance, and theoretical support.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131210064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel synthesis and design methods of optical thin film structures using vanadium dioxide phase change material","authors":"A. Sarangan","doi":"10.1117/12.2535617","DOIUrl":"https://doi.org/10.1117/12.2535617","url":null,"abstract":"Recent developments in phase change materials have led to a new generation of electronic and photonic memory devices and thermally tunable devices. Vanadium dioxide (VO2) and Germanium Antimoy Telluride (GST) are two of the most developed phase change materials. The focus of this work is on vanadium dioxide. Current methods of growing vanadium dioxide rely on reactive physical vapor deposition on heated and lattice-matched substrates. This is often a difficult deposition process with a very narrow process window. The high process tem- peratures, patterning and etching challenges, and the lattice-matching requirement severely limit the number of materials VO2 can co-exist with. As a result, compared to other types of inorganic optical thin film materials, the development of practical devices exploiting VO2 has been modest. In this paper, novel and simplified approaches to producing VO2 thin films is discussed, especially in regards to creating multilayer optical structures, tunable optical filters, switchable wiregrid polarizers, and tunable Bragg reflectors. The growth and characterization of nanostructured VO2 films are also discussed.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125671388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Free lunches: Extending material properties by homogenization","authors":"T. Mackay, A. Lakhtakia","doi":"10.1117/12.2534409","DOIUrl":"https://doi.org/10.1117/12.2534409","url":null,"abstract":"Electromagnetic constitutive properties can be extended by judiciously combining component materials to form a composite material. Provided that the granular dimensions of the composite material are much smaller than the electromagnetic wavelengths involved, the composite material may be regarded as a homogenized composite material (HCM). There are many ways in which the characteristics of HCMs can extend beyond those of the component materials; for examples, gain and loss, group speed, and weak nonlinearity may each be enhanced via homogenization. There even are many ways in which HCMs can exhibit characteristics that are not at all exhibited by their component materials; for examples, anisotropy and bianisotropy, Voigt-wave propagation, and negative phase velocity may be supported by HCMs whose component materials do not support these properties. The combination of active and dissipative component materials can yield HCMs that are neither wholly active nor wholly dissipative; such HCMs are can support plane-wave propagation, as well as surface-wave propagation, that is amplified for certain propagation directions but attenuated for other propagation directions.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128388875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis of structure characteristics and internal electron diffusion characteristics of GaAs","authors":"Yuehua Wang, Yitao Cao, YunZe Qiu, Y. Qiu","doi":"10.1117/12.2536275","DOIUrl":"https://doi.org/10.1117/12.2536275","url":null,"abstract":"GaAs material has excellent photoelectric properties and is the most sensitive vacuum semiconductor material in the visible light band. GaAs photocathode has become the core component of low-light-level night vision device and been widely used in the field of low-light-level night vision. We systematically analyzed the structural characteristics of the low-light image intensifier and defined the boundary conditions of GaAs electron emission. It provided calculation basis for further analysis of the photoelectric effect of GaAs photocathode. We established GaAs crystal model on first-principle, calculated the energy band structure, and analyzed the mechanism of surface electrons escaping. After photon energy transferring to the electronic, electrons were excited and went out of its orbit, becoming free electrons and gaining initial kinetic energy. According to the experience, we assumed the collision energy loss rate after free electron diffusion process, and calculated number of electron collision in crystal model and displacement distance. Linear displacement distance is electron diffusion length. The initial kinetic energy of electrons excited by GaAs material depends on the energy of incident photons, as well as on the cathode's own temperature. We analyzed the relationship between the electron diffusion length of the material and the temperature. The electron emission characteristics of GaAs material were summarized, which provided technical support for the subsequent process research of this cathode material. GaAs low light image intensifier is made of the following parts: photocathode、 MCP、 screen and high voltage power. Using the elastic collision model, we calculated the energy of the photon transported to the electron transfer. Assuming the collision energy loss rate of electronic diffusion is 20% every time, free electrons crash until photon energy losses. The collision frequency and the moving distance are GaAs material properties. We analyzed the relationship between the temperature and electron diffusion length of GaAs in this paper.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123478468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Why orthotropic friction is important on graphene and graphene fluoride thin films","authors":"S. Lyuksyutov, L. Barabanova, Jeffrey A. McCausland","doi":"10.1117/12.2531767","DOIUrl":"https://doi.org/10.1117/12.2531767","url":null,"abstract":"We experimentally demonstrate that graphene and graphene fluoride manifest different coefficients of sliding friction at the edges (graphene fluoride from 5.8×10-3 to 4.9×10-1; graphene from 8.2×10-3 to 3.3×10-1) of a sheet sample versus the interior (graphene fluoride from 5.1×10-3 to 1.5×10-1; graphene from 2.5×10-2 to 2.3×10-1) under ambient humidity conditions (~ 40-60%). Atomic force microscopy (AFM) was used to prove the friction coefficients show distinct directional dependence between graphene and graphene fluoride.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120978833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Twisted light by a Kerr-like TiO2 thin film with Au-Pt nanoparticles","authors":"H. Martines-Arano, A. J. Piña-Díaz, C. R. Torres-SanMiguel, M. Trejo-Valdez, C. Torres‐Torres","doi":"10.1117/12.2535817","DOIUrl":"https://doi.org/10.1117/12.2535817","url":null,"abstract":"Third-order nonlinear optical effects exhibited by Gold-Platinum nanoparticles in a Titanium Dioxide thin solid film were induced by a two-wave mixing configuration with digitally-modulated irradiance profiles. The nanomaterials were prepared by a sol-gel method, and a spinning coating technique was employed for the preparation of the samples in thin film form. We used a Nd:YAG laser system at 532 nm wavelength and 4 nanosecond for the exploration of the thirdorder optical nonlinearities. The characterization of the morphology and optical transmittance was carried out by transmission electronic microscopy and UV-vis spectroscopy studies; respectively. A round continuously variable nonlinear refractive index was proposed to generate twisted light by nanosecond pulses in the sample. The system was designed with a randomly distributed density of the nanoparticles. This technique can be considered an alternative for performing ultrafast all-optical instrumentation functions.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121819985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bi-modal resonance and spectral characteristics of a thin chiral slab resonator on an achiral substrate using Fresnel coefficients","authors":"R. Ataai, Monish R. Chatterjee","doi":"10.1117/12.2531858","DOIUrl":"https://doi.org/10.1117/12.2531858","url":null,"abstract":"Recently, some work involving investigation of polarization states and Fresnel coefficients (FCs) at an achiral/chiral (ACC) interface indicated that depending on specific chiral bands and also the density (or phase index) of the two dielectrics, certain types of anomalous behavior would result. These anomalies included Brewster effects for s-polarized incident light, and total internal reflection (TIR) for propagation from lower to higher phase index. Analog time signals as well as 2-dimensional stationary images were propagated across the ACC boundary to determine the effect of chirality and parameters such as permittivity and permeability under dispersion.1-3 Extensions to the case of two interfaces comprised of an ACC on the front end and a chiral/achiral (CAC) on the back will be considered in this work. We note that a slab resonator is amenable to analyses similar to a Fabry-Perot (FP) resonator. Analysis is carried out here for the chiral slab (say with thickness d) having both ACC and CAC boundaries; here multiple reflections and transmissions are expected. Matlab simulations are carried out by incorporating boundary conditions and deriving the effective transmitted and reflected fields relative to the slab. The results are examined for a thin chiral slab with thickness d (sandwiched between achiral surface and substrate layers) in the range 10-100 nm. The transmission characteristics (which are examined to study the resonance behavior of a typical FP etalon) are investigated as functions of wavelength or frequency in the thick and thin film limits, and results are compared from resonance, resolution and polarization perspectives.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126874850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"TiO2 films on CoFe2O4 nanoparticles for the photocatalytic oxidation of rhodamine B: influence of the alcoholic solutions","authors":"Elmer Gastello, David Estrada, W. Estrada, C. Luyo, J. Espinoza, S. Ponce, J. Montes de Oca, D. Acosta, Juan M. Rodriguez","doi":"10.1117/12.2534806","DOIUrl":"https://doi.org/10.1117/12.2534806","url":null,"abstract":"In the present work, photocatalytic oxidation of Rhodamine B solutions were performed using a composite material prepared by titanium dioxide films deposited onto cobalt ferrite nanoparticles. Cobalt ferrite nanoparticles were prepared by coprecipitation of Co(II) and Fe(II) ions in basic medium, followed by a controlled oxidation process carried out by nitrate ions in basic medium in inert atmosphere at 95°C. The effect of 2 alcohols (ethanol and 2-propanol) as solvents in the deposition of TiO2 films was studied as a function of CoFe2O4/TiO2 mass ratios. Cobalt ferrite nanoparticles exhibited (36 ± 20) nm diameter with spheroidal shapes as confirmed by SEM studies. TiO2 films deposited onto CoFe2O4 were thicker using ethanol as solvent according to SEM and TEM studies. Cobalt ferrite nanoparticles exhibit a weak oxidation behaviour since around 40% of Rhodamine is eliminated after 90 min of exposition. The 4 composite materials studied oxidize 100% of Rhodamine B after 60 min of reaction and kinetics results fitted a second order degradation reaction equation. As Rhodamine B solution pH was 5.83, faster reactions occur when composite materials develop low surface charge (PZC closer to 5.83) due to small surface charge repulsion. Materials prepared with CoFe2O4/TiO2 ratios between 4 to 6 present higher kinetic constants which is confirmed by a faster Rhodamine B degradation","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131625230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}