International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors最新文献_第3页

Film thickness dependence of electrical hysteresis and Hall effect of thermochromic VO2 thin films 热致变色VO2薄膜电滞后与霍尔效应的膜厚依赖性

International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2023-01-31 DOI: 10.1117/12.2647941

Adil Driouach, B. Abdel Samad, P. Ashrit

{"title":"Film thickness dependence of electrical hysteresis and Hall effect of thermochromic VO2 thin films","authors":"Adil Driouach, B. Abdel Samad, P. Ashrit","doi":"10.1117/12.2647941","DOIUrl":"https://doi.org/10.1117/12.2647941","url":null,"abstract":"Vanadium dioxide (VO2) is a very well-known thermochromic material exhibiting a very effective first order semiconductor to metal (SMT) transition at a temperature of around 68°C. In this work we have investigated the thermochromic properties of VO2 thin films as a function of film thickness. The VO2 films were deposited by a two-step method on glass substrates. The changes occurring around the SMT have been systematically characterized by structural, optical, electrical, magnetic studies and their hysteresis cycles. The correlation between film thickness and transition temperature has been established for the VO2 films from the resistance variation during the heating and cooling cycles. The Hall voltage variation as a function of magnetic field has been measured for each of the VO2 film thicknesses. These Hall voltage measurements have enabled us to calculate the free electron density above and below the transition temperature for each of the VO2 samples. The free electron density changes conform to the semiconductor to metal transition observed and to the values mentioned in the literature.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128725240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Metal-oxide RRAM with rGO as oxygen exchange layer 以氧化石墨烯为氧交换层的金属氧化物RRAM

International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2023-01-31 DOI: 10.1117/12.2646083

Pratheek Gopalakrishnan, Nacer Ibaroudene, S. Ganguli, Anisha Roy, Ethan C. Ahn

引用次数: 0

Two-dimensional wide-bandgap materials for integrated quantum photonics 集成量子光子学的二维宽禁带材料

International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2023-01-31 DOI: 10.1117/12.2646409

Yanan Wang

引用次数: 0

Reconfigurable opto-chirality enabled by chalcogenide phase change nanomaterials 硫系相变纳米材料实现可重构光手性

International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2023-01-31 DOI: 10.1117/12.2645974

J. Burrow, K. Toussaint, A. Sarangan, I. Agha

引用次数: 0

Multifunctional metamaterial tunable filters using liquid crystals and electro-optic materials 使用液晶和电光材料的多功能超材料可调谐滤波器

International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2023-01-31 DOI: 10.1117/12.2647153

Rudra Gnawali, A. Volk, Hammid Al-Ghezi, P. Banerjee

引用次数: 0

Laser sintering of printed silver thin films for fabrication of strain sensors directly on a structure 用于直接在结构上制造应变传感器的印刷银薄膜的激光烧结

International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2023-01-31 DOI: 10.1117/12.2645127

R. Aga, W. Metzger, Laura Davidson, R. Aga, C. Bartsch, E. Heckman

{"title":"Laser sintering of printed silver thin films for fabrication of strain sensors directly on a structure","authors":"R. Aga, W. Metzger, Laura Davidson, R. Aga, C. Bartsch, E. Heckman","doi":"10.1117/12.2645127","DOIUrl":"https://doi.org/10.1117/12.2645127","url":null,"abstract":"Piezoresistive strain sensors, commonly known as resistance strain gauge, have many important applications. In this work, an alternative method to fabricate piezoresistive strain sensors directly on the structure of interest is demonstrated using a particle-free silver ink as the sensing material. The sensing material is first printed as a rectangular film on the structure of interest and a conductive serpentine pattern is generated by selective laser sintering. Only the material exposed to the focused laser is sintered and becomes conductive. The rest is washed-off by 1-dodecene solvent, leaving only the serpentine pattern, which serves as the piezoresistive strain sensor. This alternative method eliminates the need for a carrier or backing substrate and thus improves the mechanical coupling between the sensing material and the structure of interest. It also removes reinforcement effect due to the stiffness of the carrier substrate. Results from electrical characterization revealed that laser sintering power is a crucial parameter that influences fundamental properties of the sensing material such as electrical conductivity and work function. In addition, it was observed that there exists an optimum laser sintering power that results in a maximum gauge factor (GF). For strain sensors, the GF is the most important parameter because it is the measure of sensor sensitivity. When the particle-free silver ink was printed as a serpentine pattern followed by thermal sintering on a hot plate, a lower GF was measured. This shows that the alternative method to fabricate piezoresistive strain sensors is more attractive than printing the serpentine pattern then thermally sintering it.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122065498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Protein nanowire thin films for the potential of constructing green electronic devices 蛋白质纳米线薄膜在构建绿色电子器件方面的潜力

International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2023-01-31 DOI: 10.1117/12.2647424

J. Yao

引用次数: 0

Compact, multiplexed, energy-efficient silicon nanophotonic switches 紧凑、多路复用、节能的硅纳米光子开关

International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2023-01-31 DOI: 10.1117/12.2647874

Jianhao Shen, S. Chakravarty

{"title":"Compact, multiplexed, energy-efficient silicon nanophotonic switches","authors":"Jianhao Shen, S. Chakravarty","doi":"10.1117/12.2647874","DOIUrl":"https://doi.org/10.1117/12.2647874","url":null,"abstract":"Over the past decade, the benefits of photonics over electronics such as ability to achieve high bandwidth, high interconnectivity, and low latency, together with the high maturity of silicon photonics foundries has spurred robust applications in optical transceivers and in classical and quantum computing. In both application areas, silicon microring resonators (MRRs) using carrier depletion effects in p-n junctions represent the most compact optical switches manufacturable at high volume with 5.2fJ/bit power consumption. Matrix computation approaches as well wavelength-division-multiplexed modulators require several MRRs in series coupled to the silicon waveguide optical bus. Such architectures are potentially limited to ~30 by the limited free-spectral range (FSR) of an individual MRR. However, with ever increasing data volumes, there is a need to process larger matrices and/or modulate more wavelengths in the telecom bands along a single silicon bus channel. Photonic crystal (PC) dielectric structures confine an optical mode to sub-micron mode volumes and have shown the potential to reach 0.1fJ switching energies. Research till date on PC devices have centered on either inline one-dimensional PC nanobeam structures or on two-dimensional PC waveguide coupled microcavity configurations. In this paper, through detailed electrical and optical simulations, we demonstrate the feasibility to achieve compact switches with 1dB insertion loss, 5dB extinction and ~260aJ/bit switching energies in the bus-coupled 1D photonic crystal nanobeam platform. Resonance linewidths <0.1nm and FSR <100nm enable energy efficient computing of larger matrices with ~200 resonators in series separated by ~0.5nm wavelength over the entire C+L bands. Device architectures will be presented.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"6 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132531067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on GaAs photocathode band structure and inbuilt electric field under exponential doping 指数掺杂下GaAs光电阴极带结构及内置电场的研究

International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2023-01-31 DOI: 10.1117/12.2646842

Xingdong Lv, Rongguo Fu, Jianpo Gao, Xin Guo, Yingjie Wang, Huanan Zhang, Lingyun Ma, Mingzhu Huang, Xiang Yu

引用次数: 0

Controlling light polarization with VO2 films 用VO2薄膜控制光偏振

International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2023-01-31 DOI: 10.1117/12.2646195

T. Son, A. Haché

引用次数: 0