Film thickness dependence of electrical hysteresis and Hall effect of thermochromic VO2 thin films

Adil Driouach, B. Abdel Samad, P. Ashrit
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Abstract

Vanadium dioxide (VO2) is a very well-known thermochromic material exhibiting a very effective first order semiconductor to metal (SMT) transition at a temperature of around 68°C. In this work we have investigated the thermochromic properties of VO2 thin films as a function of film thickness. The VO2 films were deposited by a two-step method on glass substrates. The changes occurring around the SMT have been systematically characterized by structural, optical, electrical, magnetic studies and their hysteresis cycles. The correlation between film thickness and transition temperature has been established for the VO2 films from the resistance variation during the heating and cooling cycles. The Hall voltage variation as a function of magnetic field has been measured for each of the VO2 film thicknesses. These Hall voltage measurements have enabled us to calculate the free electron density above and below the transition temperature for each of the VO2 samples. The free electron density changes conform to the semiconductor to metal transition observed and to the values mentioned in the literature.
热致变色VO2薄膜电滞后与霍尔效应的膜厚依赖性
二氧化钒(VO2)是一种非常著名的热致变色材料,在68°C左右的温度下表现出非常有效的一阶半导体到金属(SMT)转变。在这项工作中,我们研究了VO2薄膜的热致变色特性与薄膜厚度的关系。采用两步法在玻璃衬底上沉积了VO2薄膜。通过结构、光学、电学、磁学及其磁滞周期的研究,系统地描述了SMT周围发生的变化。通过研究VO2薄膜在加热和冷却过程中的电阻变化,建立了薄膜厚度与转变温度之间的关系。测量了不同VO2薄膜厚度下霍尔电压随磁场的变化。这些霍尔电压测量使我们能够计算出每个VO2样品在转变温度上下的自由电子密度。自由电子密度的变化符合观察到的半导体到金属的转变和文献中提到的值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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