{"title":"指数掺杂下GaAs光电阴极带结构及内置电场的研究","authors":"Xingdong Lv, Rongguo Fu, Jianpo Gao, Xin Guo, Yingjie Wang, Huanan Zhang, Lingyun Ma, Mingzhu Huang, Xiang Yu","doi":"10.1117/12.2646842","DOIUrl":null,"url":null,"abstract":"By changing the doping type, the size of the in-built electric field and the band bending of GaAs photocathode material under different varying doping concentration are simulated to discuss the influence of varying doping concentration on the quantum efficiency of cathode.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study on GaAs photocathode band structure and inbuilt electric field under exponential doping\",\"authors\":\"Xingdong Lv, Rongguo Fu, Jianpo Gao, Xin Guo, Yingjie Wang, Huanan Zhang, Lingyun Ma, Mingzhu Huang, Xiang Yu\",\"doi\":\"10.1117/12.2646842\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By changing the doping type, the size of the in-built electric field and the band bending of GaAs photocathode material under different varying doping concentration are simulated to discuss the influence of varying doping concentration on the quantum efficiency of cathode.\",\"PeriodicalId\":380113,\"journal\":{\"name\":\"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2646842\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2646842","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study on GaAs photocathode band structure and inbuilt electric field under exponential doping
By changing the doping type, the size of the in-built electric field and the band bending of GaAs photocathode material under different varying doping concentration are simulated to discuss the influence of varying doping concentration on the quantum efficiency of cathode.
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