Florent Muramutsa, Samuel V. Pedersen, J. Logan, M. Eppel, Mia Busuladzic-Begic, J. Eixenberger, J. Wood, F. Ouchen, H. Subbaraman, C. Husko, B. Jaques, E. Heckman, David Estrada
{"title":"Black phosphorus ink formulation for aerosol jet printing of planar and conformal optoelectronics","authors":"Florent Muramutsa, Samuel V. Pedersen, J. Logan, M. Eppel, Mia Busuladzic-Begic, J. Eixenberger, J. Wood, F. Ouchen, H. Subbaraman, C. Husko, B. Jaques, E. Heckman, David Estrada","doi":"10.1117/12.2647379","DOIUrl":null,"url":null,"abstract":"The ink formulation process of stable black phosphorus (BP) inks for aerosol jet printing (AJP) is presented. Formulating BP stable photonic inks involves tailoring the flake size and ink solvents to AJP. Single crystal BP inks were used to print both backgated FET devices with a resistivity as low as 105Ω-cm and the resulting thin films showed photoluminescence emission in the NIR regime paving the way to printed optoelectronic devices.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2647379","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The ink formulation process of stable black phosphorus (BP) inks for aerosol jet printing (AJP) is presented. Formulating BP stable photonic inks involves tailoring the flake size and ink solvents to AJP. Single crystal BP inks were used to print both backgated FET devices with a resistivity as low as 105Ω-cm and the resulting thin films showed photoluminescence emission in the NIR regime paving the way to printed optoelectronic devices.