Study on spectral response characteristics of NEA GaAlAs/GaAs vacuum photodiode based on external electric field

Rongguo Fu, Gaoqi Zhang, Zhaoxi Liu, Guiyuan Wang, Tongchun Sun
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Abstract

In this paper, GaAlAs/GaAs vacuum photodiodes are used to test the spectral response of different external electric fields, and the influence of external electric field on NEA GaAlAs/GaAs photocathode is analyzed. Based on the spectral response curves under different bias voltages, the external voltage increases and the corresponding spectral response sensitivity increases. As the bias voltage increases, the sensitivity of the spectral response increases slowly and gradually becomes saturated. This is mainly due to the fact that under the action of a strong field, the photoelectron obtains a sufficiently high energy to escape into the vacuum, resulting in a spectral response sensitivity tending to saturation.
基于外电场的NEA GaAlAs/GaAs真空光电二极管光谱响应特性研究
本文利用GaAlAs/GaAs真空光电二极管测试了不同外加电场下的光谱响应,并分析了外加电场对NEA GaAlAs/GaAs光电阴极的影响。从不同偏置电压下的光谱响应曲线来看,外部电压增大,相应的光谱响应灵敏度增大。随着偏置电压的增加,光谱响应的灵敏度缓慢增加,逐渐趋于饱和。这主要是由于在强场作用下,光电子获得足够高的能量逃逸到真空中,导致光谱响应灵敏度趋于饱和。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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