Kaikai Xu, N. Ning, K. Ogudo, J. Polleux, Qi Yu, L. Snyman
{"title":"Light emission in silicon: from device physics to applications","authors":"Kaikai Xu, N. Ning, K. Ogudo, J. Polleux, Qi Yu, L. Snyman","doi":"10.1117/12.2199841","DOIUrl":null,"url":null,"abstract":"Silicon Photonics is an emerging field of research and technology, where nano-silicon can play a fundamental role. Visible light emitted from reverse-biased p-n junctions at highly localized regions, where avalanche breakdown occurs, can be used to realize a visible electro-optical sources in silicon by means of light-emitting diodes (Si-LEDs) is reviewed by characterizing the spectral distribution. Regarding applications, a monolithic optoelectronic integrated circuit (OEIC) for on-chip optical interconnection based on standard CMOS technology is discussed. Although there are some of the present challenges with regard to the realization of suitable electro-optical elements for diverse integrated circuit applications, the type of silicon light source can be further developed into be a Si-based optical short-distance on-chip optical interconnect applications.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2199841","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
Silicon Photonics is an emerging field of research and technology, where nano-silicon can play a fundamental role. Visible light emitted from reverse-biased p-n junctions at highly localized regions, where avalanche breakdown occurs, can be used to realize a visible electro-optical sources in silicon by means of light-emitting diodes (Si-LEDs) is reviewed by characterizing the spectral distribution. Regarding applications, a monolithic optoelectronic integrated circuit (OEIC) for on-chip optical interconnection based on standard CMOS technology is discussed. Although there are some of the present challenges with regard to the realization of suitable electro-optical elements for diverse integrated circuit applications, the type of silicon light source can be further developed into be a Si-based optical short-distance on-chip optical interconnect applications.