{"title":"Design and fabrication of tunable inductors based on vanadium dioxide thin film","authors":"E. Shin, Liangyu Li, K. Pan, G. Subramanyam","doi":"10.1117/12.2536937","DOIUrl":null,"url":null,"abstract":"Vanadium dioxide (VO2) is a well-known phase change material that shows a metal to insulator transition at temperatures near 68 °C. It has many potential applications in science and engineering. In this study, VO2 thin film based planar spiral tunable inductors were designed and fabricated on a sapphire substrate. This approach can be a potential solution for reconfigurable RF/microwave wireless communication systems. According to the experimental results, fabricated inductors show a 43.4 % (from 2.19 nH to 1.24 nH) tuning range at 2 GHz when the VO2 thin film layer undergoes the insulator-to-metal transition from room temperature to temperatures above the transition. This result confirms that the proposed inductor structure was fully functional with the successful inductance tuning capability.","PeriodicalId":380113,"journal":{"name":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2536937","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Vanadium dioxide (VO2) is a well-known phase change material that shows a metal to insulator transition at temperatures near 68 °C. It has many potential applications in science and engineering. In this study, VO2 thin film based planar spiral tunable inductors were designed and fabricated on a sapphire substrate. This approach can be a potential solution for reconfigurable RF/microwave wireless communication systems. According to the experimental results, fabricated inductors show a 43.4 % (from 2.19 nH to 1.24 nH) tuning range at 2 GHz when the VO2 thin film layer undergoes the insulator-to-metal transition from room temperature to temperatures above the transition. This result confirms that the proposed inductor structure was fully functional with the successful inductance tuning capability.