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CAS 2010 Proceedings (International Semiconductor Conference)最新文献

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Graphene ink photodetector for UV-Vis and NIR domain 用于紫外可见光和近红外领域的石墨烯墨水光电探测器
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650370
A. Radoi, A. Cismaru, A. Iordănescu, M. Dragoman
{"title":"Graphene ink photodetector for UV-Vis and NIR domain","authors":"A. Radoi, A. Cismaru, A. Iordănescu, M. Dragoman","doi":"10.1109/SMICND.2010.5650370","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650370","url":null,"abstract":"Graphene ink, functionalized graphene ink with 10 nm colloidal gold nanoparticles and functionalized graphene ink with a mixture of bovine serum albumin and gold nanoparticles, were applied on top of an interdigitated electrode. The I–V characteristics of such modified electrode were investigated under illumination from UV-Vis and NIR domain.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127958821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Invertase immobilization onto dispersed magnetic particles synthesis and characterization 分散磁性颗粒固定化转化酶的合成与表征
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650721
V. Luntraru, V. Danciulescu, A. Nechifor, Ș. Voicu, G. Nechifor
{"title":"Invertase immobilization onto dispersed magnetic particles synthesis and characterization","authors":"V. Luntraru, V. Danciulescu, A. Nechifor, Ș. Voicu, G. Nechifor","doi":"10.1109/SMICND.2010.5650721","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650721","url":null,"abstract":"This paper presents the synthesis and characterization of magnetite particles (covered and stabilized with mercaptoetnol) functionalized with invertase, using cyanuric chloride as spacer. The above synthesized materials were structurally characterized using Scanning Electron Microscopy, FT-IR spectroscopy, thermal analysis.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126263700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A simple method to improve the energy capability of large DMOS power transistors 一种提高大型DMOS功率晶体管能量容量的简单方法
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650565
D. Costachescu, M. Pfost, L. Goras
{"title":"A simple method to improve the energy capability of large DMOS power transistors","authors":"D. Costachescu, M. Pfost, L. Goras","doi":"10.1109/SMICND.2010.5650565","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650565","url":null,"abstract":"In this paper, a simple method to improve the energy capability of large DMOS transistors is proposed. The energy capability is increased by ensuring a more uniform temperature profile across the power device. This is achieved by changing the current densities inside different regions of the DMOS by means of a very simple circuit, no temperature sensors and no technological changes being required. Improvements in the energy capability of 9.2% or even 39% are observed, depending on the operating conditions. As demonstrated by measurements, this solution proves to be effective for a wide range of dissipated energies.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131555490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High power 1100-nm InGaAs/GaAs quantum dot lasers 高功率1100纳米InGaAs/GaAs量子点激光器
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5649056
E. Pavelescu, C. Gilfert, M. Danila, A. Dinescu, J. Reithmaier
{"title":"High power 1100-nm InGaAs/GaAs quantum dot lasers","authors":"E. Pavelescu, C. Gilfert, M. Danila, A. Dinescu, J. Reithmaier","doi":"10.1109/SMICND.2010.5649056","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649056","url":null,"abstract":"1100-nm InGaAs/(Al)GaAs quantum dots laser material was developed with relatively low In content of 28 % and an appropriate laser design to allow for high power applications. In comparison to a InGaAs QD laser with similar design but higher In content of 60 % the newly developed laser exhibits an improved internal quantum efficiency and temperature stability of the threshold current.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"01 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131360290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of the deposition conditions on the properties of TiO2 -Ge nanocomposite films synthesized by magnetron co-sputtering 沉积条件对磁控共溅射法制备TiO2 -Ge纳米复合薄膜性能的影响
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650691
A. Slav, G. Stan, A. Galca
{"title":"Influence of the deposition conditions on the properties of TiO2 -Ge nanocomposite films synthesized by magnetron co-sputtering","authors":"A. Slav, G. Stan, A. Galca","doi":"10.1109/SMICND.2010.5650691","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650691","url":null,"abstract":"A growing need for eco-friendly energy sources have led recently to a frantic search of new compositional systems for photovoltaic applications. The nanocomposite titania-germanium (TiO2-Ge) systems represent a new viable family of optoelectronic materials. Their structural, optical and electronic properties can be easily tailored by customizing the density and size of Ge dots in the TiO2 matrix. Early studies on TiO2-Ge nanocomposites have shown promises for their use as an alternative in photovoltaic applications. In this study we report the TiO2-Ge films synthesis by reactive magnetron co-sputtering. Their properties were evaluated by compositional (EDS), structural (XRD, FTIR) and optical (UV-Vis) characterizations.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132374652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and simulation of a integrated Mach-Zehnder interferometer sensor 集成马赫-曾德干涉仪传感器的设计与仿真
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650448
M. Ionita, M. Kusko
{"title":"Design and simulation of a integrated Mach-Zehnder interferometer sensor","authors":"M. Ionita, M. Kusko","doi":"10.1109/SMICND.2010.5650448","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650448","url":null,"abstract":"In this paper we present the simulation results of a proposed integrated Mach-Zehnder interferometer sensor. The sensor can be fabricated from polymeric materials like SU8 and PMMA using the e-beam lithography. The numerical simulations consider the detection of the analysis medium refractive index ranging from 1.33 to 1.36.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115013900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Quantum capacitance of bilayer graphene 双层石墨烯的量子电容
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650376
G. Kliros
{"title":"Quantum capacitance of bilayer graphene","authors":"G. Kliros","doi":"10.1109/SMICND.2010.5650376","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650376","url":null,"abstract":"We present a simple phenomenological model for the quantum capacitance of bilayer graphene. Quantum capacitance is calculated from the broadened density of states taking into account electron-hole puddles and possible finite lifetime of electronic states through a Gaussian broadening distribution. The obtained results are in agreement with many features recently observed in quantum capacitance measurements on gated bilayer graphene. The temperature dependence of quantum capacitance is also investigated.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"26 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113970981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
V-shape through wafer via manufactured by drie variable isotropy process 采用驱动变各向同性工艺制造v形通孔晶圆
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650440
D. Vasilache, S. Colpo, S. Ronchin, F. Giacomozzi, B. Margesin
{"title":"V-shape through wafer via manufactured by drie variable isotropy process","authors":"D. Vasilache, S. Colpo, S. Ronchin, F. Giacomozzi, B. Margesin","doi":"10.1109/SMICND.2010.5650440","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650440","url":null,"abstract":"A new process for through-wafer interconnects was studied by our group. This new process was developed to facilitate metallised through wafer via holes manufacturing. V-shape profile can contribute to an easier metallisation process and better adhesion. Manufacturing process use the possibility to change the isotropy in the Deep Reactive Ion Etching (DRIE) equipments from anisotropic to completely isotropic. Two slightly different processes were used in order optimize the technology and to see the changes introduced by isotropic/anisotropic processes sequence.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115541946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Fabrication of graphene devices, issues and prospects 石墨烯器件的制备、问题与展望
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650325
G. Deligeorgis, G. Konstantinidis, M. Dragoman, R. Plana
{"title":"Fabrication of graphene devices, issues and prospects","authors":"G. Deligeorgis, G. Konstantinidis, M. Dragoman, R. Plana","doi":"10.1109/SMICND.2010.5650325","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650325","url":null,"abstract":"Graphene based devices have seen an enormous amount of published literature since its isolation 6 years ago, however processing issues and wafer size material availability have proven to be the most demanding tasks in fabrication of graphene devices. This work focuses on some of the main technological issues relating to realization of graphene based devices. Solutions and current techniques are shortly presented and discussed.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124096678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Microwave field effect transistor based on graphene 石墨烯微波场效应晶体管
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650730
M. Dragoman, G. Deligeorgis, D. Neculoiu, D. Dragoman, G. Konstantinidis, A. Cismaru, R. Plana
{"title":"Microwave field effect transistor based on graphene","authors":"M. Dragoman, G. Deligeorgis, D. Neculoiu, D. Dragoman, G. Konstantinidis, A. Cismaru, R. Plana","doi":"10.1109/SMICND.2010.5650730","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650730","url":null,"abstract":"We present dc and microwave experiments on a graphene-based top-gate field effect transistor. The transistor is acting as an active device far from the Dirac point, and turns into a passive device at the Dirac point, the transistor amplification being suppressed due to lack of carriers. In this way, microwave switches can be implemented based on the specific charge carrier transport in graphene. The maximum stable gain of the transistor is maintained up to 9 GHz, and the mobility of graphene FET is greater than 8000 cm2/Vs far from the Dirac point.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116402017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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