高功率1100纳米InGaAs/GaAs量子点激光器

CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI:10.1109/SMICND.2010.5649056

E. Pavelescu, C. Gilfert, M. Danila, A. Dinescu, J. Reithmaier

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摘要

开发了1100nm InGaAs/(Al)GaAs量子点激光材料，其相对较低的In含量为28%，并且具有合适的激光器设计，可以实现高功率应用。与设计相似但In含量高达60%的InGaAs QD激光器相比，该激光器具有更高的内部量子效率和阈值电流的温度稳定性。

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High power 1100-nm InGaAs/GaAs quantum dot lasers

1100-nm InGaAs/(Al)GaAs quantum dots laser material was developed with relatively low In content of 28 % and an appropriate laser design to allow for high power applications. In comparison to a InGaAs QD laser with similar design but higher In content of 60 % the newly developed laser exhibits an improved internal quantum efficiency and temperature stability of the threshold current.

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CAS 2010 Proceedings (International Semiconductor Conference)

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